1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to current requirements. Editorial changes throughout. - gap 06-08-01 Raymond Monnin REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER
2、COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ECL, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-01-22
3、QUINT AND/NAND GATE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-91537 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E496-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFEN
4、SE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines a
5、nd lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91537 01 M X X Federal stock class designator RHA de
6、signator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA desig
7、nator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Ci
8、rcuit function 01 100304 Quint AND/NAND gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non
9、-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP5-T24
10、 or CDIP6-T24 24 dual-in-line Y See figure 1 24 quad flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
11、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Negative supply voltage range (VEE) -7.0 V dc to +0.5 V dc DC input voltage range (VIN) . VEEto +0.5 V DC inpu
12、t current range (IIN) . -30 mA to +5.0 mA Maximum dc output current (IOUT) . -50 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) . +175C Maximum power dissipation (PD) . 805 mW Thermal resistance, junction-to-case (JC): Case X . See
13、 MIL-STD-1835 Case Y . 28C/W 1.4 Recommended operating conditions. Negative supply voltage range (VEE) . -5.7 V dc minimum to -4.2 V dc maximum High level input voltage range (VIH) . -1.165 V dc minimum to -0.870 V dc maximum Low level input voltage range (VIL) -1.830 V dc minimum to -1.475 V dc max
14、imum Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these d
15、ocuments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic
16、Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization
17、Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicabl
18、e laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or net
19、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V sh
20、all be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in ac
21、cordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appen
22、dix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3
23、.2.4 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation pa
24、rameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The
25、part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product u
26、sing this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q
27、 and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer i
28、n order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA
29、 prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conforman
30、ce. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to D
31、SCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturer
32、s facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 29 (see MIL-PRF-38535, a
33、ppendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance charac
34、teristics. Test Symbol Conditions -55C TC +125C -5.7 V VEE -4.2 V Group A subgroups Limits Unit unless otherwise specified Min Max High level output voltage VOHVIL= -1.83 V, 1, 2 -1.025 -0.870 V IH= -0.87 V, 3 -1.085 -0.870 Low level output voltage VOLVEE= -5.7 V, -4.2 V 1, 2 -1.830 -1.620 Loading:
35、50 to -2.0 V 3 -1.830 -1.555 High Level threshold output VOHC1, 2 -1.035 voltage 3 -1.085 Low Level threshold output VOLC1, 2 -1.610 voltage 3 -1.555 High level input current IIHVEE= -5.7 V, D1x inputs 1, 2 350 A IN= -0.87 V 3 500 2x inputs 1, 2 250 3 350 Low level input current IILVEE= -4.2 V, VIN=
36、 -1.83 V 1, 2, 3 0.5 Negative power supply drain current IEEVEE= -5.7 V, -4.2 V 1, 2, 3 -75 -25 mA Functional tests VIL= -1.642 V, VIH= -1.023 V, VEE= -5.7 V, -4.2 V See 4.4.1b 7, 8 Propagation delay time, data tPLH1, See figure 4 9 0.4 1.8 ns to output, Dnx to Ox, Ox tPHL110 0.3 2.3 11 0.3 1.9 Prop
37、agation delay time, data tPLH2, 9 0.9 2.8 to function output, Dnx to F tPHL210 0.9 3.4 11 0.8 2.9 Transition time, output 1/ tTLH, 9 0.3 1.6 tTHL10 0.2 2.0 11 0.2 1.8 1/ This parameter is provided as design information only (not tested but guaranteed). Provided by IHSNot for ResaleNo reproduction or
38、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Inches 1/ Millimeters 1/ Symbol Min Max Min Max A .085 2.16 b .016 .018 0.41 0.46 c .004 .006 0.1
39、0 0.15 D/E .370 .400 2/ 9.40 10.16 2/ e .045 .055 1.14 1.40 L .250 .360 6.35 9.14 Q .035 .050 0.89 1.27 S .075 1.91 N 24 24 NOTE: 1. The U.S. government preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in
40、 the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 2. This dimension allows for meniscus and glass overrun. FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICR
41、OCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines X Y Terminal number Terminal symbol 1 Oe D1d 2 eO D1e 3 Od D2e 4 dO Oe 5 F eO 6 VCCOd 7 VCCAdO 8 cO F 9 Oc VCC10 bO VCCA11 Ob cO 12
42、aO Oc 13 Oa bO 14 D1a Ob 15 D2a aO 16 D1b Oa 17 D2b D1a 18 VEED2a 19 D1c D1b 20 D2c D2b 21 D2d VEE22 D1d D1c 23 D1e D2c 24 D2e D2d FIGURE 2. Terminal connections. Inputs Outputs D1x D2x Ox xQ F L L H H L H L H L L L H H H H L 1/ 1/ F = H when OaObOcOdOe = LLLLL and F = L when OaObOcOdOe LLLLL H = Hi
43、gh level voltage. L = Low level voltage. FIGURE 3. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FOR
44、M 2234 APR 97 NOTES: 1. VCC= VCCA= +2.0 V, VEE= -2.5 V. 2. L1 and L2 = equal length 50 impedance lines. 3. RT= 50 terminator internal to scope. 4. Decoupling 0.1 F from GND to VCCand VEE. 5. All unused outputs are loaded with 50 to GND. 6. CL= fixture and stray capacitance 3 pF. FIGURE 4. Test circu
45、it and switching waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sa
46、mpling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. Fo
47、r device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspecti
48、on. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs
