DLA SMD-5962-95626 REV F-2010 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 8K X 8-BIT PROM MONOLITHIC SILICON.pdf

上传人:terrorscript155 文档编号:700689 上传时间:2019-01-01 格式:PDF 页数:18 大小:196.27KB
下载 相关 举报
DLA SMD-5962-95626 REV F-2010 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 8K X 8-BIT PROM MONOLITHIC SILICON.pdf_第1页
第1页 / 共18页
DLA SMD-5962-95626 REV F-2010 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 8K X 8-BIT PROM MONOLITHIC SILICON.pdf_第2页
第2页 / 共18页
DLA SMD-5962-95626 REV F-2010 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 8K X 8-BIT PROM MONOLITHIC SILICON.pdf_第3页
第3页 / 共18页
DLA SMD-5962-95626 REV F-2010 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 8K X 8-BIT PROM MONOLITHIC SILICON.pdf_第4页
第4页 / 共18页
DLA SMD-5962-95626 REV F-2010 MICROCIRCUIT MEMORY DIGITAL RADIATION HARDENED CMOS 8K X 8-BIT PROM MONOLITHIC SILICON.pdf_第5页
第5页 / 共18页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R044-96. 96-01-24 M.A. Frye B Changes in accordance with NOR 5962-R460-97. 97-09-22 Raymond Monnin C Update boilerplate for class “T” changes. - glg 98-12-02 Raymond Monnin D Correction of paragraph 1.5 Table I

2、 changes. - glg 99-06-24 Raymond Monnin E Correction of test condition voltage value for E in Table I for Operating supply current; was VDD changed to GND. Removed neutron irradiation line from section 1.5. Update boilerplate. - ksr 04-02-12 Raymond Monnin F Update boilerplate paragraphs. glg 10-03-

3、04 Charles Saffle REV SHEET REV F F F SHEET 15 16 17 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 STANDARD MICROCIRCUIT CHECKED BY Jeff Bowling http:/www.dscc.dl

4、a.mil DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, RADIATION HARDENED, CMOS, 8K X 8-BIT PROM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-05 AMSC N/A REVISION LEVEL F SIZE A CAGE C

5、ODE 67268 5962-95626 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E205-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95626 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DS

6、CC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead

7、 finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their eval

8、uation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN shall be as shown in the following example: 5962 F 95626 01 V Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4)

9、 (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specified RHA level

10、s and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type 1/ Generic number 2/ Circuit function Access time 01 HS-6664RH 8K X 8-bit Radiation hardened PROM 65 ns 1

11、.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in acco

12、rdance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan 1.2.4 Case outline(s). The case outline(s) shall be as designated

13、in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y CDFP3-F28 28 Flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q, T and V or MIL-PRF-38535, appendix A for device class M.

14、 _ 1/ Device is available in an unprogrammed state only. 2/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking perm

15、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95626 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 3/ Supply voltage range -0.3 V dc to +7.0 V dc Voltage on any pin with respect to g

16、round . -0.3 V dc to VDD+0.3 V dc Maximum power dissipation (PD) 1.75 W Lead temperature (soldering, 10 seconds maximum) +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) . +175C Storage temperature range -65C to +150C Temperature under bias . -55C to +125C

17、1.4 Recommended operating conditions. Supply voltage (VDD) . +4.5 V dc to +5.5 V dc Ground voltage (GND) 0.0 V dc Input high voltage (VIH) +2.4 V dc minimum to VCCInput Low voltage (VIL) 0.0 V dc to +0.8 V dc maximum Case operating temperature range (TC) -55C to +125C 1.5 Radiation features Maximum

18、total dose available (dose rate = 50 - 300 rads(Si)/s) Class M, Q, and V . 300 Krads(Si) Class T 100 KRads(Si) Dose rate upset . 5 x 108Rads(Si)/sec 4/ Dose rate survivability . 5 x 1011Rads(Si)/sec 4/ Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 100 MEV-cm2/m

19、g 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or cont

20、ract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDB

21、OOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191

22、11-5094.) _ 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ Guaranteed by process or design, but not tested. Provided by IHSNot for ResaleNo reproduction or networking

23、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95626 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specifi

24、ed herein. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DoDISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DoDISS are the issues of the documents cited in the solicitation. AMER

25、ICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor

26、 Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.or

27、g.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the

28、 text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for d

29、evice classes Q, T and V shall be in accordance with MIL-PRF-38535, and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for d

30、evice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q,

31、T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on fig

32、ure 2. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 2. When required in screening (see 4.2 herein) or qualification conformance inspection, groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test. A mini

33、mum of 50 percent of the total number of cells shall be programmed. 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not a part of this drawing. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in figure 5. 3.3 Electrical perform

34、ance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements.

35、The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of

36、 the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.

37、 Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95626 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

38、 F SHEET 5 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of complian

39、ce. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed

40、 as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-3853

41、5 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of

42、microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for d

43、evice class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for

44、device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.10.1 Unprogrammed device delivered to the user. All testing shall be verified through final electrical testing as defined in 3.2.3.1 and table I. It is recommend

45、ed that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Qua

46、lity Management (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-385

47、35 and the device manufacturers QM plan, including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturers QM plan. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF

48、-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device class T, screening shall be

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1