1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R075-97. - jak 96-11-25 Monica L. Poelking B Incorporate NOR and update boilerplate to latest MIL-PRF-38535 requirements. - CFS 01-06-11 Thomas M. Hess C Correct the title to accurately describe the device func
2、tion. Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-09-14 Thomas M. Hess D Add device types 02 and 03. Add die appendix - jak 08-05-05 Thomas M. Hess E Change footnote 6 in section 1.5, herein. - jak 08-12-03 Thomas M. Hess F To change RHA level “H” to “G” for device type 01.
3、 Update radiation features in section 1.5 and table IB. Update boilerplate paragraphs to current requirements of MIL-PRF-38535 - MAA 11-03-17 David J. Corbett G Add equivalent test circuit and footnote 5 in figure 4. Delete class M requirements. MAA 12-07-24 Thomas M. Hess REV SHEET REV G G G G G G
4、G G SHEET 15 16 17 18 19 20 21 22 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguye
5、n THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUADRUPLE 2-INPUT AND GATE, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-06-12 AMSC N/A REVISION LEVEL G SIZE A CAG
6、E CODE 67268 5962-96518 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E377-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96518 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FOR
7、M 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). W
8、hen available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. 5962 G 96518 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.
9、4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) id
10、entify the circuit function as follows: Device type Generic number Circuit function 01 54ACS08 Radiation hardened, quadruple 2-input AND gate 02 54ACS08E Enhanced, radiation hardened, quadruple 2-input AND gate 03 54ACS08E Enhanced, radiation hardened, quadruple 2-input AND gate 1.2.3 Device class d
11、esignator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as fol
12、lows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. . Provided by IHSNot for ResaleNo reproduction or networking permitted
13、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96518 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/, 2/, 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V
14、dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC)
15、: Device type 01, case outlines C and X See MIL-STD-1835 Device types 02 and 03, case outline X . 15.5C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Device type 02 and 03 . 3.2 W 4/ 1.4 Recommended operating conditions. 2/, 3/ Supply voltage range
16、(VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device type 02 and 03 . +3.0 V dc to +5.5 V dc Input voltage range (VIN) . +0.0 V dc to VDDOutput voltage range (VOUT) +0.0 V dc to VDDCase operating temperature range (TC) -55C to +125C Maximum input rise or fall time rate at VDD= 4.5 V (tr, tf) 1 ns/V
17、 5/ 1.5 Radiation features. 7/ Maximum total dose available: Device type 01 (dose rate = 50 300 rads (Si)/s) 5 x 105rads (Si) Device type 02 (effective dose rate = 1 rad (Si)/s) . 1 x 106rad (Si) 6/ Device type 03 (dose rate = 50 300 rads (Si)/s) 5 x 105rads (Si) Single event phenomenon (SEP) : Devi
18、ce type 01: No upsets (SEU) at effective LET (see 4.4.4.4). 80 MeV/(mg/cm2) 8/ No latch-up (SEL) at effective LET (see 4.4.4.4) . 120 MeV/(mg/cm2) 8/ Device types 02 and 03: No upsets (SEU) at effective LET (see 4.4.4.4). 108 MeV/(mg/cm2) 8/ No latch-up (SEL) at effective LET (see 4.4.4.4) . 120 MeV
19、/(mg/cm2) 8/ Dose rate upset (20 ns pulse) 1 x 109rad (Si)/s 8/ 9/ Dose rate induced latch-up . None 8/ Dose rate survivability . 1 x 1012rad (Si)/s 8/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade perform
20、ance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 sect
21、ion 3.4.1, PD(Package) = (TJ(max) - TC(max) . JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maxi
22、mum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower, environment. 7/ Radiation tes
23、ting is performed on the standard evaluation circuit (SEC). 8/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 9/ This limit is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types 02 and
24、 03 do not meet this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96518 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCU
25、MENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEF
26、ENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - Lis
27、t of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government
28、 publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event P
29、henomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict be
30、tween the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requireme
31、nts for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and phy
32、sical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specifie
33、d on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation tes
34、t connections. The irradiation test connections shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH
35、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96518 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characte
36、ristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defin
37、ed in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“
38、 on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL
39、-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime -VA pr
40、ior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-
41、38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96518 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6
42、 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Unit Min Max High level input voltage VIH02, 03 3.0 V and 3.6 V 1, 2, 3 0.7 VDDV All 4.5V and 5.5V 1, 2, 3 0.
43、7 VDD Low level input voltage VIL02, 03 3.0 V and 3.6 V 1, 2, 3 0.3 VDD V All 4.5V and 5.5V 1, 2, 3 0.3 VDD High level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSFor all other inputs, VIN= VDDor VSSIOH= -100 A 02, 03 3.0 V 1, 2, 3 VDD-0.25 V For all inputs affecting
44、output under test, VIN= VDDor VSSFor all other inputs, VIN= VDDor VSSIOH= -100 A All 4.5V 1, 2, 3 VDD-0.25 Low level output voltage VOLFor all inputs affecting output under test, VIN= VDDor VSSFor all other inputs, VIN= VDDor VSSIOL= 100 A 02, 03 3.0 V 1, 2, 3 0.25 V For all inputs affecting output
45、under test, VIN= VDDor VSSFor all other inputs, VIN= VDDor VSSIOL= 100 A All 4.5 V 1, 2, 3 0.25 V Input current high IIHFor input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 1.0 A Input current low IILFor input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll
46、 5.5 V 1, 2, 3 -1.0 A Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96518 DLA LAND AND MARITIME COLUMBUS, O
47、HIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Unit Min Max Output current (sink) IOL1 4/ VIN= VDDor VSSV
48、OL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 8.0 mA IOL2 4/ VIN= VDDor VSSVOL= 0.4 V 02, 03 3.0 V and 3.6 V 1, 2, 3 6.0 Output current (source) IOH1 4/ VIN= VDDor VSSVOH= VDD -0.4 V All 4.5 V and 5.5 V 1, 2, 3 -8.0 mA IOH2 4/ VIN= VDDor VSSVOH= VDD -0.4 V 02, 03 3.0 V and 3.6 V 1, 2, 3 -6.0 Short circuit output current IOS15/ 6/ VOUT= VDDand VSSAll 4.5 V and 5.5 V 1, 2, 3 -200 +200 mA IOS25/ 6/ VOUT= VDDand VSS02, 03 3.0 V and 3.6 V 1, 2, 3 -100 +100 mA Input capacitance CINf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Switching p
