1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R115-97. 96-12-12 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-09-04 Thomas M. Hess C Correct the title to accurately describe the device function. Chang
2、e figure 4, switching waveforms and test circuit. Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-08-23 Thomas M. Hess D Update boilerplate paragraphs and radiation paragraphs 4.4.4.1 4.4.4.4 to the current MIL-PRF-38535 requirements. Delete class M requirement throughout.- LTG
3、 13-12-17 Thomas M. Hess REV SHEET REV SHEET REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING I
4、S AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL
5、DATE 96-04-05 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96533 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E081-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96533 DLA LAND AND MARITIME COLUMBUS, OHIO 432
6、18-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in
7、the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96533 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device c
8、lass designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2
9、 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS54 Radiation hardened, 4-wide 2-input AND-OR-INVERT gate, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying
10、 the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C
11、 GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962
12、96533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.
13、3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power
14、 dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall time at VDD=
15、 4.5 V (tr, tf) 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 x 106Rads (Si) Single event phenomenon (SEP): Effective linear energy transfer (LET), no upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Effective linear energy transfer (LET), no latch-up (s
16、ee 4.4.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s Latch-up . None Dose rate survivability . 1 x 1012Rads (Si)/s _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance an
17、d affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ Derate system propagation delays by difference in
18、 rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase o
19、rder or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government sp
20、ecification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-
21、PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcirc
22、uit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094). 2.2 Non-Government publications. The following doc
23、ument(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradi
24、ation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, 100 Barr Harbor Drive, P. O. Box C700, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the refer
25、ences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in a
26、ccordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and
27、 physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth tab
28、le shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit sha
29、ll be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-965
30、33 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as
31、 specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be mark
32、ed with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option,
33、the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a
34、QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply
35、to the requirements of this drawing (see 6.6.1 herein. The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-3853
36、5. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE
37、VISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIHAll 4.5 V 1, 2, 3 2.25 V M, D, P, L, R, F, G, H 3
38、/ All 1 2.25 All 5.5 V 1, 2, 3 2.75 M, D, P, L, R, F, G, H 3/ All 1 2.75 Low level input voltage VILAll 4.5 V 1, 2, 3 0.8 V M, D, P, L, R, F, G, H 3/ All 1 0.8 All 5.5 V 1, 2, 3 0.8 M, D, P, L, R, F, G, H 3/ All 1 0.8 High level output voltage VOHFor all inputs affecting output under test, VIN= VDDo
39、r VSSIOH= -8.0 mA All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 Low level output voltage VOLFor all inputs affecting output under test, VIN= VDDor VSSIOL= 8.0 mA All 4.5 V 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 3/ All 1 0.4 Input current high IIHFor input under test, VIN= 5.5 V For all
40、 other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input current low IILFor input under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Quiescent supply current delta, TTL input levels IDD4/ For inp
41、ut under test VIN= VDD- 2.1 V For all other inputs VIN= VDDor VSS All 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R, F, G, H 3/ All 1 1.6 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 Output current (Sink) IOL5/ VIN= VDDor VSS VOL= 0.4 V All 4.5 V and
42、5.5 V 1, 2, 3 8.0 mA Output current (Source) IOH 5/ VIN= VDDor VSS VOH= VDD-0.4 V All 4.5 V and 5.5 V 1, 2, 3 -8.0 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96533 DLA L
43、AND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max Short circuit output c
44、urrent IOS6/ 7/ VOUT = VDDand VSSAll 5.5V 1, 2, 3 -200 200 mA Input capacitance CINf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW8/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 2.0 mW/MHz Funct
45、ional test 9/ VIH= 0.5 VDD, VIL= 0.8 V See 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, any input to Y tPLH10/ CL= 50 pF, see figure 4 All 4.5 V and 4.5 V 9, 10, 11 1.0 13.0 ns M, D, P, L, R, F, G, H 3/ All 9 1.0 13.0 tPHL10/ CL= 50 pF, see figure 4
46、 All 4.5 V and 5.5 V 9, 10, 11 1.0 16.0 M, D, P, L, R, F, G, H 3/ All 9 1.0 16.0 1/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table IA herein. Output terminals not designated shall be high level logic, low level logic, o
47、r open, except for the IDDQand IDDtests, the output terminals shall be open. When performing the IDDQand IDDtests, the current meter shall be placed in the circuit such that all current flows through the meter. 2/ For negative and positive voltage and current values, the sign designates the potentia
48、l difference in reference to VSSand the direction of current flow respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 3/ RHA parts supplied to this drawing have been characterized through all levels M, D, P, L, R, F, G, and H of irradiation. However, this device is only tested at the H level. Pre and Post irradiation values are identical unless otherwise specified in table IA. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 4/ This t
