1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R221-97. 97-02-28 Monica L. Poelking B Changes in accordance with NOR 5962-R381-97. 97-07-24 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t
2、hroughout. LTG 03-09-12 Thomas M. Hess D Update radiation features in section 1.5 and paragraphs 4.4.4.1 4.4.4.5. Add paragraph 2.2. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 09-12-14 Thomas M. Hess REV SHET REV D D D D D D D SHEET 15 16 17 18 19 20 21 REV STATUS
3、 REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE D
4、EPARTMENT OF DEFENSE CHECKED BY Monica L. Poelking APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, FIFO REGISTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-12-15 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96602 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E068
5、-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96602 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two
6、 product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assuranc
7、e (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96602 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number
8、1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator
9、. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 40105B Radiation hardened CMOS, FIFO register 02 40105N Radiation hardened CMOS, FIFO register with neutron irradiation die 1.2.3
10、 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance wit
11、h MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Le
12、ad finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96602 DEFENSE SUPPLY CEN
13、TER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input 10 mA Device dissipation per output transisto
14、r 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) . +265C Thermal resistance, junction-to-case (JC): Case E . 24C/W Case X . 29C/W Thermal resistance, junction-to-ambient (JA): Case E . 73C/W Case X . 114C/W Junction temperature (TJ) . +175C Maximum pow
15、er dissipation at TA= +125C (PD): 4/ Case E . 0.68 W Case X . 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage (VIN) . 0 V to VDDOutput voltage (VOUT) . 0 V to VDD1.5 Radiation features. M
16、aximum total dose available (dose rate = 50 - 300 rads (Si)/s) 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose rate latch-up . 2 x 108Rads(Si)/s 5/ Dose
17、rate survivability . 5 x 1011Rads(Si)/s 5/ Neutron irradiated (for device type 02) . 1 x 1014neutrons/cm21/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwis
18、e specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derat
19、e linearly (the derating is based on JA) at the following rate: Case E . 13.7 mW/C Case X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96602 DE
20、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unle
21、ss otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits.
22、MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or fr
23、om the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited
24、 in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from
25、 ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersede
26、s applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Man
27、agement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit
28、die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein f
29、or device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under d
30、ocument revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96602 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,
31、OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall app
32、ly over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein.
33、In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be mark
34、ed. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38
35、535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (s
36、ee 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for th
37、is drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device
38、classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving d
39、evices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offsho
40、re documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction
41、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96602 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions -55C TC +125C unl
42、ess otherwise specified Device type Group A subgroups Limits Units Min Max Supply current IDDVDD= 5 V VIN= 0.0 V or VDDAll 1, 3 1/ 5.0 A 2 1/ 150 VDD= 10 V VIN= 0.0 V or VDDAll 1, 3 1/ 10 2 1/ 300 VDD= 15 V VIN= 0.0 V or VDDAll 1, 3 1/ 10 2 1/ 600 VDD= 20 V, VIN= 0.0 V or VDDAll 1 10 2 1000 M, D, P,
43、 L, R 2/ All 1 25 VDD= 18 V, VIN= 0.0 V or VDDAll 3 10 Low level output current (sink) IOLVDD= 5 V VO= 0.4 V VIN= 0.0 V or VDDAll 1 0.53 mA 2 1/ 0.36 3 1/ 0.64 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDDAll 1 1.4 2 1/ 0.9 3 1/ 1.6 VDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 1 3.5 2 1/ 2.4 3 1/ 4.2 High level
44、 output current (source) IOHVDD= 5 V VO= 4.6 V VIN= 0.0 V or VDDAll 1 -0.53 mA 2 1/ -0.36 3 1/ -0.64 VDD= 5 V VO= 2.5 V VIN= 0.0 V or VDDAll 1 -1.8 2 1/ -1.15 3 1/ -2.0 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 1 -1.4 2 1/ -0.9 3 1/ -1.6 VDD= 15 V VO= 13.5 V VIN= 0.0 V or VDDAll 1 -3.5 2 1/ -2.4 3 1/
45、 -4.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96602 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Elec
46、trical performance characteristics Continued. Test Symbol Test conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Units Min Max High level output voltage VOHVDD= 5 V, no load 1/ All 1, 2, 3 4.95 V VDD= 10 V, no load 1/ 1, 2, 3 9.95 VDD= 15 V, no load 3/ 1, 2, 3
47、14.95 Low level output voltage VOLVDD= 5 V, no load 1/ All 1, 2, 3 0.05 V VDD= 10 V, no load 1/ 1, 2, 3 0.05 VDD= 15 V, no load 1, 2, 3 0.05 Low level input voltage VILVDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V VDD= 20 V, VIN= VDDor GND 7 VDD= 18 V,
48、VIN= VDDor GND All 8A M, D, P, L, R 2/ All 7 VDD= 3.0 V, VIN= VDDor GND All 8B M, D, P, L, R 2/ All 7 Transition time 4/ tTLH, tTHLVDD= 5.0 V, VIN= VDDor GND All 9 200 ns 10, 11 270 Propagation delay time, shift out or reset to data out ready 4/ tPHL1VDD= 5.0 V, VIN= VDDor GND All 9 370 ns 10, 11 500 M, D, P, L, R 2/ All 9 500VDD= 10 V 1/ All 9 180 VDD= 15 V 1/ 9 130 Propagation delay time, shift in to data in ready 4/ tPHL2VDD= 5.0 V, VIN= VDDor GND All 9 320 ns 10, 11 432 M, D, P, L, R 2/ All 9 432 VDD= 10 V 1
