1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline Z. Editorial changes throughout. - tvn 98-12-10 Monica L. Poelking B Update boilerplate to MIL-PRF-38535 requirements.- LTG 04-02-02 Thomas M. Hess C Switch pin symbols for pin numbers 113 and 115 on figure 2 terminal connections
2、, case outlines Y and Z on sheet 19. Update boilerplate to MIL-PRF-38535 requirements. - LTG 06-04-06 Thomas M. Hess REV C SHET 35 REV C C C C C C C C C C C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV C C C C C C C C C C C C C C REV STATUS OF SHEETS SHEET
3、1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 98-05-18 MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDENED MICROCONTR
4、OLLER, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-98552 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL C SHEET 1 OF 35 DSCC FORM 2233 APR 97 5962-E359-06 Provided by IHSNot for ResaleNo reproduc
5、tion or networking permitted without license from IHS-,-,-SIZE A 5962-98552 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting o
6、f high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2
7、 PIN. The PIN is as shown in the following example: 5962 H 98552 01 Q X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q a
8、nd V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
9、 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 UT69R000-12 MHz Radiation hardened microcontroller, 12-MHz operating frequency 02 UT69R000-16 MHz Radiation hardened microcontroller, 16-MHz operating frequency 1.2.3 De
10、vice class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with M
11、IL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CMGA7-P145 145 1/ Pin grid array Y CQCC1-F132 132 Flat pack, u
12、nformed leads Z See figure 1 132 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Pin D4 is an index pin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license
13、 from IHS-,-,-SIZE A 5962-98552 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ DC supply voltage (VDD) . -0.3 V to +7.0 V Voltage on any pin (VI/O) . -0.3 V to VDD+0.3 V DC input c
14、urrent (II) 10 mA Storage temperature (TSTG) -65C to +150C Latchup immunity (ILU) 150 mA 2/ Maximum power dissipation (PD) 600 mW Maximum junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC) 10C/W 2/ 1.4 Recommended operating conditions. DC supply voltage (VDD) 4.5 V to 5.5 V Te
15、mperature range (TC). -55C to +125C DC input voltage (VIN) 0 V to VDD1.5 Radiation features. Maximum total dose available (dose rate = 50 300 krad/s). 1 x 106Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.4) 55 MeV/(mg/cm2) Dose rate upset
16、(20 ns pulse) 3/ Dose rate latchup 3/ Dose rate survivability 3/ Neutron irradiation . 4/ 1.6 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) 83.7 percent 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specification
17、, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 -
18、 Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the de
19、vice. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Test per MIL-STD-883, method 1012. 3/ When characterized as a result of the procuring activities request, the condition will be specified. 4/ When a value is determined per customer requirements it shal
20、l be specified. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-98552 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MI
21、L-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
22、 Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption ha
23、s been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not aff
24、ect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and ph
25、ysical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connection
26、s shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Test circuit and timing waveforms. The test circuit and timing waveforms shall be as specified on figure 4. 3.2.5 Radiation exposure connections. The radiation exposure connections sh
27、all be as specified on figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operati
28、ng temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufactur
29、ers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device clas
30、ses Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark fo
31、r device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For devic
32、e class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm tha
33、t the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-9
34、8552 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appe
35、ndix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this
36、drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewe
37、r. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in
38、accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, ap
39、pendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shal
40、l be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall
41、 be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical tes
42、t parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The bu
43、rn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs,
44、 biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall
45、be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D
46、, and E inspections (see 4.4.1 through 4.4.4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-98552 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TAB
47、LE IA. Electrical performance characteristics. Limits Test Symbol 1/ Test conditions 2/ -55C TC +125C unless otherwise specified Group A subgroups Device type Min Max Unit Low level input voltage, TTL inputs 3/ VIL10.8 Low level input voltage, OSC inputs 3/ VIL21, 2, 3 All 1.2 V High level input vol
48、tage, TTL inputs 3/ 4/ VIH12.0 High level input voltage, OSC inputs 3/ VIH21, 2, 3 All 3.6 V IOH= -400 A 2.4 High level output voltage, TTL outputs VOH1IOH= -800 A 5/ 1, 2, 3 All 2.4 High level output voltage, OSC outputs VOH2IOH= -100 A 1, 2, 3 All 3.5 V IOL= 3.2 mA 0.4 Low level output voltage, TTL outputs VOL1IOL= 6.4 mA 5/ 1, 2, 3 All 0.4 Low level output voltage, OSC outputs VOL2IOL= 100 A 1, 2, 3 All 1.0 V Input leakage current, inputs without resistors IIN1VIN= VDDor VSS-10 10 Input leakage current, inputs with pull-up resistors IIN2VIN= VSS-900 -80 Inpu
