1、BRITISH STANDARDBS EN 60747-16-4: 2004 Semiconductor devices Part 16-4: Microwave integrated circuits SwitchesICS 31.080.99 g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g38g50g51g60g5
2、3g44g42g43g55g3g47g36g58+A1:2011National forewordThis British Standard is the official English language version of EN 60747-16-4:2004+A1:2011. It is identical with IEC 60747-16-4:2004, incorporating amendment 1:2009. It supersedes BS EN 60747-16-4:2004, which is withdrawn.The start and finish of tex
3、t introduced or altered by amendment is indicated in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment 1 is indicated by !“.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semic
4、onductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application.Compliance with a British Standard cannot confer immu
5、nity from legal obligations.BS EN 60747-16-4:2004+A1:2011This British Standard was published under the authority of the Standards Policy and Strategy Committee on8 November 2004 BSI 2011Amendments/corrigenda issued since publicationDate Comments 31 July 2011 Implementation of IEC amendment 1:2009, w
6、ith CENELEC endorsement A1:2011ISBN 978 0 580 59783 1EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart
7、 35, B - 1050 Brussels 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-4:2004 E ICS 31.080.99 English version Semiconductor devices Part 16-4: Microwave integrated circuits Switches (IEC 60747-16-4:2004) Dispositifs
8、semiconducteurs Partie 16-4 : Circuits intgrs hyperfrquences Commutateurs (CEI 60747-16-4:2004) Halbleiterbauelemente Teil 16-4: Integrierte Mikrowellenschaltkreise Schalter (IEC 60747-16-4:2004) This European Standard was approved by CENELEC on 2004-09-01. CENELEC members are bound to comply with t
9、he CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat
10、or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the offi
11、cial versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Sloven
12、ia, Spain, Sweden, Switzerland and United Kingdom. EN 60747-16-4:2004+A1January 2011 EN 64707-61-42:400 - - 2 Foreword The text of document 47E/256/FDIS, future edition 1 of IEC 60747-16-4, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the
13、IEC-CENELEC parallel vote and was approved by CENELEC as EN 60747-16-4 on 2004-09-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2005-06-01 latest date by which the natio
14、nal standards conflicting with the EN have to be withdrawn (dow) 2007-09-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 60747-16-4:2004 was approved by CENELEC as a European Standard without any modification. In the official version, for Biblio
15、graphy, the following note has to be added for the standard indicated: IEC 60747-16-1 NOTE Harmonized as EN 60747-16-1:2002 (not modified). _ Page 2Foreword to amendment A1 The text of document 47E/358/CDV, future amendment 1 to IEC 60747-16-4:2004, prepared by SC 47E, Discrete semiconductor devices
16、, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as amendment A1 to EN 60747-16-4:2004 on 2011-01-02. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC
17、 shall not be held responsible for identifying any or all such patent rights. The following dates were fixed: latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2011-10-02 latest date by which the nation
18、al standards conflicting with the amendment have to be withdrawn (dow) 2014-01-02 _ Endorsement notice The text of amendment 1:2009 to the International Standard IEC 60747-16-4:2004 was approved by CENELEC as an amendment to the European Standard without any modification. _ BS EN 60747-16-4:2004+A1:
19、2011EN 60747-16-4:2004+A1:2011 (E) 2 067-7416-4 CEI :0240(E) CONTENTS 1 Scope.6 2 Normative references .6 3 Terms and definitions .6 4 Essential ratings and characteristics.8 4.1 Circuit identification and types.8 4.1.1 Designation and types .8 4.1.2 General function description 8 4.1.3 Manufacturin
20、g technology8 4.1.4 Package identification8 4.1.5 Main application 9 4.2 Application description 9 4.2.1 Conformance to system and/or interface information .9 4.2.2 Overall block diagram9 4.2.3 Reference data9 4.2.4 Electrical compatibility.9 4.2.5 Associated devices9 4.3 Specification of the functi
21、on 9 4.3.1 Detailed block diagram Functional blocks .9 4.3.2 Identification and function of terminals.10 4.3.3 Function description 11 4.3.4 Family related characteristics 11 4.4 Limiting values (absolute maximum rating system) 11 4.4.1 Electrical limiting values 11 4.4.2 Temperatures 12 4.5 Operati
22、ng conditions (within the specified operating temperature range) .12 4.5.1 Power supplies Positive and/or negative values12 4.5.2 Initialization sequences (where appropriate)12 4.5.3 Input voltage(s) (where appropriate) 12 4.5.4 Output current(s) (where appropriate)12 4.5.5 Voltage and/or current of
23、 other terminal(s) 12 4.5.6 External elements (where appropriate) 12 4.5.7 Operating temperature range.12 4.6 Electrical characteristics12 4.7 Mechanical and environmental ratings, characteristics and data13 4.8 Additional information13 4.8.1 Equivalent input and output circuit.13 4.8.2 Internal pro
24、tection .13 4.8.3 Capacitors at terminals13 4.8.4 Thermal resistance13 4.8.5 Interconnections to other types of circuit .13 4.8.6 Effects of externally connected component(s)14 4.8.7 Recommendations for any associated device(s) 14 4.8.8 Handling precautions.14 4.8.9 Application data.14 4.8.10 Other
25、application information.14 4.8.11 Date of issue of the data sheet 14 Page 3BS EN 60747-16-4:2004+A1:2011EN 60747-16-4:2004+A1:2011 (E)067-7416-4 IEC:0240(E) 3 5 Measuring methods 14 5.1 General .14 5.1.1 General precautions 14 5.1.2 Characteristic impedances.14 5.1.3 Handling precautions.14 5.1.4 Ty
26、pes 14 5.2 Insertion loss (Lins)15 5.2.1 Purpose.15 5.2.2 Circuit diagram 15 5.2.3 Principle of measurement 15 5.2.4 Circuit description and requirements16 5.2.5 Precautions to be observed .16 5.2.6 Measurement procedure16 5.2.7 Specified conditions 16 5.3 Isolation (Liso) .17 5.3.1 Purpose.17 5.3.2
27、 Circuit diagram 17 5.3.3 Principle of measurement 17 5.3.4 Circuit description and requirements17 5.3.5 Precautions to be observed .18 5.3.6 Measurement procedure18 5.3.7 Specified conditions 18 5.4 Return loss (Lret) .19 5.4.1 Purpose.19 5.4.2 Circuit diagram 19 5.4.3 Principle of measurement 19 5
28、.4.4 Circuit description and requirements19 5.4.5 Precautions to be observed .20 5.4.6 Measurement procedure20 5.4.7 Specified conditions 20 5.5 Input power at 1 dB compression (Pi(1dB) and output power at 1 dB compression (Po(1dB)21 5.5.1 Purpose.21 5.5.2 Circuit diagram 21 5.5.3 Principle of measu
29、rement 21 5.5.4 Circuit description and requirements21 5.5.5 Precaution to be observed.21 5.5.6 Measurement procedure21 5.5.7 Specified conditions 21 5.6 Turn-on time (ton), turn-off time (toff), rise time (tr(out), and fall time (tf(out).22 5.6.1 Purpose.22 5.6.2 Circuit diagram 22 5.6.3 Principle
30、of measurement 22 5.6.4 Circuit description and requirements23 5.6.5 Precautions to be observed .23 5.6.6 Measurement procedure23 5.6.7 Specified conditions 23 5.7 Adjacent channel power ratio (Po(mod)/Padj) 24 5.7.1 Purpose.24 Page 4BS EN 60747-16-4:2004+A1:2011EN 60747-16-4:2004+A1:2011 (E) 4 067-
31、7416-4 CEI :0240(E) 5.7.2 Circuit diagram 24 5.7.3 Principle of measurements 24 5.7.4 Circuit description and requirement .25 5.7.5 Precautions to be observed .25 5.7.6 Measurement procedure25 5.7.7 Specified conditions 26 5.8 nth order harmonic distortion ratio (Pnth /P1) .27 5.8.1 Purpose.27 5.8.2
32、 Circuit diagram 27 5.8.3 Principle of measurements 27 5.8.4 Circuit description and requirements27 5.8.5 Measurement procedure28 5.8.6 Specified conditions 28 Figure 1 Circuit diagram for the measurement of the insertion loss Lins15 Figure 2 Circuit diagram for the measurement of the isolation Liso
33、 .17 Figure 3 Circuit for the measurements of the return loss 19 Figure 4 Circuit for the measurements of switching time 22 Figure 5 Input and output waveforms .22 Figure 6 Circuit for the measurement of the adjacent channel power ratio24 Figure 7 Circuit diagram for the n-th order harmonic distorti
34、on ratio .27 Page 5Bibliography . AnnexZ A( nroma)evitroN mevitar efercnese ot tniertannoia lbupcilatoisn wit hthriecorresdnopiE gnuroepap nublicatsnoi . 3 4 60 47- -64 IEC: 04( ) 5.7. Cir it di r 5.7. i i lo ef r t 5.7. Cir it decsri ti a nd r ir t . 5.7. uati sn to r de . 5.7. ur tne pr r 5.7. ifi
35、 d iti sn 5. -edrh armoincd irotstino rati o(Pnt h/1) . 5.8. r . 5.8. Cir it di r 5.8. i i lo ef r t 5.8. Cir it decsri ti a nd r ir ts 5.8. ur tne pr r 5.8. ifi d iti sn iugr riC id ti rg for th e esarumeneo tf thi e retinosol insiugr 2 riC i t i rg f ort hm eesarumene t ft h eis l toi niso . Fi r
36、3 Cir i tf r t em ur stne of th r t rn loss Fi r 4 Cir i tf r t em ur stne of s itc i ti e Fi re I n ta t tu f r s . Fi r6 e ir if t r eht r net f t a e jca tn lenn re r it Fi r 7 Cir it di r f r th en-ht or r r ci di otrtino r ti . Pa5 egE4002:46174706 NBbliography . 30Z ( or tive) Nor ative r f re
37、nces to int rnation l public tions ith theirrr sponding E r pe n p li tions . 29.BS EN 60747-16-4:2004+A1:2011EN 60747-16-4:2004+A1:2011 (E)067-7416-4 IEC:0240(E) 5 SEMICONDUCTOR DEVICES Part 16-4: Microwave integrated circuits Switches 1 Scope This part of IEC 60747 provides new measuring methods,
38、terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave switches. There are many combinations for RF ports in switches, such as SPST (single pole single throw), SPDT (single pole double throw), SP3T (single pole triple throw), DPDT (double po
39、le double throw), etc. Switches in this standard are based on SPDT. However, this standard is applicable to the other types of switches. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited appl
40、ies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60747-4, Semiconductor devices Discrete devices Part 4: Microwave devices IEC 60748-2, Semiconductor devices Integrated circuits Part 2: Digital integrated circuits IEC 60748-3, Semicon
41、ductor devices Integrated circuits Part 3: Analogue integrated circuits IEC 60748-4, Semiconductor devices Integrated circuits Part 4: Interface integrated circuits 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. Terms related to electrical chara
42、cteristics Page 6!“!“IEC 60617, Graphical symbols for diagrams IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-16-1:2001, Semiconductor devices Part 16-1: Microwave integrated circuits Amplifiers Amendment 1 (2007)1 1There exists a consolidated edition 1.1 published in 2007, includ
43、ing the base publication (2001) and its Amendment 1 (2007). IEC 61340-5-1:2007, Electrostatics Part 5-1: Protection of electronic devices from electrostatic phenomena General requirementsIEC/TR 61340-5-2:2007, Electrostatics Part 5-2: Protection of electronic devices from electrostatic phenomena Use
44、r guideBS EN 60747-16-4:2004+A1:2011EN 60747-16-4:2004+A1:2011 (E) 6 067-7416-4 CEI :0240(E) 3.3 return loss Lretratio of the incident power Pincat the specified port to the reflected power Prefat the same port in the linear region of the power transfer curve Pref(dBm) = f(Pinc) NOTE 1 In this regio
45、n, Pref (dBm) = Pinc (dBm). NOTE 2 Usually the return loss is expressed in decibels. 3.4 input power at 1 dB compression Pi(1 dB)input power where the insertion loss increases by 1 dB compared with insertion loss in linear region 3.5 output power at 1 dB compression Po(1dB)output power where the ins
46、ertion loss increases by 1 dB compared with insertion loss in linear region 3.6 turn on time toninterval between the lower reference point on the leading edge of the control voltage and the upper reference point on the leading edge of the envelope of the output voltage in the linear region of the po
47、wer transfer curve Po(dBm) = f(Pi) NOTE In this region, Po(dBm) = Pi (dBm). 3.7 turn off time toffinterval between the upper reference point on the trailing edge of the control voltage and the lower reference point on the trailing edge of the envelope of the output voltage in the linear region of th
48、e power transfer curve Po(dBm) = f(Pi) NOTE In this region, Po(dBm) = Pi (dBm). 3.8 rise time tr(out)interval between the lower reference point on the leading edge of the output voltage and the upper reference point on the leading edge of the envelope of the output voltage in the linear region of th
49、e power transfer curve Po(dBm) = f(Pi) NOTE In this region, Po(dBm) = Pi (dBm). Page 73.1 insertion loss Linsratio of the input power to the output power at the switched on port, in the linear region of the power transfer curve Po(dBm) = f(Pi) NOTE 1 In this region, Po(dBm) = Pi(dBm). NOTE 2 Usually the insertion loss is expressed in decibels. !“3.2 isolation Lisoratio of the input power to the output pow
