1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards Publicationraising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPar
2、t 9: Wafer to wafer bonding strength measurement for MEMSBS EN 62047-9:2011BS EN 62047-9:2011Incorporating corrigendum March 2012National forewordThis British Standard is the UK implementation of EN 62047-9:2011. It isidentical to IEC 62047-9:2011.The UK participation in its preparation was entruste
3、d to Technical CommitteeEPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2011ISBN 978
4、0 580 60631 1ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of the StandardsPolicy and Strategy Committee on 30 September 2011.Amendments issued since publicationAmd. No. Date Text affectedBRITISH S
5、TANDARDBS EN 62047-9:2011National forewordThis British Standard is the UK implementation of EN 62047-9:2011. It isidentical to IEC 62047-9:2011.The UK participation in its preparation was entrusted to Technical CommitteeEPL/47, Semiconductors.A list of organizations represented on this committee can
6、 be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2011ISBN 978 0 580 60631 1ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligation
7、s.This British Standard was published under the authority of the StandardsPolicy and Strategy Committee on 30 September 2011.Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS EN 62047-9:2011National forewordThis British Standard is the UK implementation of EN 62047-9:2
8、011. It is identical to IEC 62047-9:2011, incorporating corrigendum March 2012.The start and finish of text introduced or altered by corrigendum is indicated in the text by tags. Text altered by IEC corrigendum March 2012 is indicated in the text by . The British Standards Institution 2013. Publishe
9、d by BSI Standards Limited 2013ISBN 978 0 580 78793 5ICS 31.080.99Compliance with a British Standard cannot confer immunity from legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 September 2011.Amendments/corrigenda issued
10、since publicationDate Text affected31 January 2013 Implementation of IEC corrigendum March 2012EUROPEAN STANDARD EN 62047-9 NORME EUROPENNE EUROPISCHE NORM August 2011 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee
11、fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62047-9:2011 E ICS 31.080.99 English version Semiconductor devices - Micro-electromechanical
12、devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011) Dispositifs semiconducteurs - Dispositifs microlectromcaniques - Partie 9: Mesure de la rsistance de collage de deux plaquettes pour les MEMS (CEI 62047-9:2011) Halbleiterbauelemente - Bauelemente der Mikrosyst
13、emtechnik - Teil 9: Prfverfahren zur Festigkeit von Full-Wafer-Bondverbindungen in der Mikrosystemtechnik (MEMS) (IEC 62047-9:2011) This European Standard was approved by CENELEC on 2011-08-17. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditio
14、ns for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three
15、 official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical
16、 committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerla
17、nd and the United Kingdom. BS EN 62047-9:2011EN 62047-9:2011 - 2 - Foreword The text of document 47F/82/FDIS, future edition 1 of IEC 62047-9, prepared by SC 47F, Micro-electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
18、CENELEC as EN 62047-9 on 2011-08-17. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fixed: latest date by which
19、 the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-05-17 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-08-17 Annex ZA has been added by CENELEC. _ Endorsement notice The t
20、ext of the International Standard IEC 62047-9:2011 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 62047-2 NOTE Harmonized as EN 62047-2. IEC 62047-4 NOTE Harmoni
21、zed as EN 62047-4. _ BS EN 62047-9:2011- 3 - EN 62047-9:2011 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following referenced documents are indispensable for the application of this document. For dated references, only th
22、e edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 6
23、0749-19 - Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength EN 60749-19 - ISO 6892-1 2009 Metallic materials - Tensile testing - Part 1: Method of test at room temperature EN ISO 6892-1 2009 ASTM E399-06e2 2008 Standard Test Method for Linear-Elastic Plane-St
24、rain Fracture Toughness K Ic of Metallic Materials - - BS EN 62047-9:2011 2 62047-9 IEC:2011 CONTENTS 1 Scope . 6 2 Normative references . 6 3 Measurement methods . 6 3.1 General . 6 3.2 Visual test . 6 3.2.1 Types of visual test 6 3.2.2 Equipment . 7 3.2.3 Procedure 7 3.2.4 Expression of results .
25、7 3.3 Pull test . 7 3.3.1 General . 7 3.3.2 Equipment . 8 3.3.3 Procedure 8 3.3.4 Expression of results . 9 3.4 Double cantilever beam test using blade . 9 3.4.1 General . 9 3.4.2 Equipment . 11 3.4.3 Procedure 11 3.4.4 Expression of results . 11 3.5 Electrostatic test 12 3.5.1 General . 12 3.5.2 Eq
26、uipment . 13 3.5.3 Procedure 13 3.5.4 Expression of results . 14 3.6 Blister test . 14 3.6.1 General . 14 3.6.2 Preparation of the specimens 15 3.6.3 Test apparatus and testing method 15 3.6.4 Report . 16 3.7 Three-point bending test 16 3.7.1 General . 16 3.7.2 Preparation of the specimens 17 3.7.3
27、Test apparatus and testing method 18 3.7.4 Report . 19 3.8 Die shear test 19 3.8.1 General . 19 3.8.2 Preparation of the specimens 20 3.8.3 Test apparatus 21 3.8.4 Test method 21 3.8.5 Shear bonding strength . 22 3.8.6 Report . 22 Annex A (informative) Example of bonding force 23 Annex B (informativ
28、e) An example of the fabrication process for three-point bending specimens 24 Bibliography 25 BS EN 62047-9:2011 2 62047-9 IEC:2011 CONTENTS 1 Scope . 6 2 Normative references . 6 3 Measurement methods . 6 3.1 General . 6 3.2 Visual test . 6 3.2.1 Types of visual test 6 3.2.2 Equipment . 7 3.2.3 Pro
29、cedure 7 3.2.4 Expression of results . 7 3.3 Pull test . 7 3.3.1 General . 7 3.3.2 Equipment . 8 3.3.3 Procedure 8 3.3.4 Expression of results . 9 3.4 Double cantilever beam test using blade . 9 3.4.1 General . 9 3.4.2 Equipment . 11 3.4.3 Procedure 11 3.4.4 Expression of results . 11 3.5 Electrosta
30、tic test 12 3.5.1 General . 12 3.5.2 Equipment . 13 3.5.3 Procedure 13 3.5.4 Expression of results . 14 3.6 Blister test . 14 3.6.1 General . 14 3.6.2 Preparation of the specimens 15 3.6.3 Test apparatus and testing method 15 3.6.4 Report . 16 3.7 Three-point bending test 16 3.7.1 General . 16 3.7.2
31、 Preparation of the specimens 17 3.7.3 Test apparatus and testing method 18 3.7.4 Report . 19 3.8 Die shear test 19 3.8.1 General . 19 3.8.2 Preparation of the specimens 20 3.8.3 Test apparatus 21 3.8.4 Test method 21 3.8.5 Shear bonding strength . 22 3.8.6 Report . 22 Annex A (informative) Example
32、of bonding force 23 Annex B (informative) An example of the fabrication process for three-point bending specimens 24 Bibliography 25 BS EN 62047-9:201162047-9 IEC:2011 3 Figure 1 Bonding strength measurement pull test 8 Figure 2 Bonding strength measurement double cantilever beam (DCB) test specimen
33、 using blade . 10 Figure 3 Bonding strength measurement electrostatic test . 13 Figure 4 A specimen for blister test 15 Figure 5 Three-point bending specimen and loading method 17 Figure 6 Specimen geometry of three-point bending specimen . 18 Figure 7 Die shear testing set-up . 19 Figure 8 Size req
34、uirement of control tool and specimen . 20 Figure 9 Example of bonded region in test piece 20 Figure 10 Setting of contact tool 22 Figure A.1 An example of bonding force or load measurement with time at constant rate of upper fixture moving 23 Figure B.1 An example of specimen preparation for three-
35、point bending test . 24 Table 1 Example of visual test . 7 Table 2 Example of pull test . 9 Table 3 Example of Double Cantilever Beam test using blade 12 Table 4 Example of electrostatic test . 14 BS EN 62047-9:2011 6 62047-9 IEC:2011 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 9: Waf
36、er to wafer bonding strength measurement for MEMS 1 Scope This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS process
37、ing/assembly. The applicable wafer thickness is in the range of 10 m to several millimeters. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edit
38、ion of the referenced document (including any amendments) applies. IEC 60749-19, Semiconductor devices Mechanical and climatic test methods Part 19: Die shear strength ISO 6892-1: 2009, Metallic materials Tensile testing Part1: Method of test at room temperature ASTM E399-06e2: 2008, Standard Test M
39、ethod for Linear-Elastic Plane-Strain Fracture Toughness K Ic of Metallic Materials 3 Measurement methods 3.1 General There are different ways to measure bonding strength such as visual test, pull test, double cantilever beam test using blade, electrostatic test, blister test, three-point bend test,
40、 and die shear test. 3.2 Visual test 3.2.1 Types of visual test From colour change of silicon substrate and surface of glass, this method tells you only a general information like whether the material is bonded or not. The visual test shall be performed to confirm whether substantial other bonding t
41、ests are required, and/or to identify the area that the bonding tests shall be conducted. Optical microscope shall be used to evaluate the bonding interface of glass to silicon and glass to glass. An infrared (IR) camera shall be used to observe voids existing in the bonding interface of silicon to
42、silicon NOTE Visual test is a simple qualitative test method. BS EN 62047-9:2011 6 62047-9 IEC:2011 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 9: Wafer to wafer bonding strength measurement for MEMS 1 Scope This standard describes bonding strength measurement method of wafer to wafer
43、 bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 m to several millimeters. 2 Normative references The following refer
44、enced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60749-19, Semiconductor devices Mechanical and climatic test met
45、hods Part 19: Die shear strength ISO 6892-1: 2009, Metallic materials Tensile testing Part1: Method of test at room temperature ASTM E399-06e2: 2008, Standard Test Method for Linear-Elastic Plane-Strain Fracture Toughness K Ic of Metallic Materials 3 Measurement methods 3.1 General There are differe
46、nt ways to measure bonding strength such as visual test, pull test, double cantilever beam test using blade, electrostatic test, blister test, three-point bend test, and die shear test. 3.2 Visual test 3.2.1 Types of visual test From colour change of silicon substrate and surface of glass, this meth
47、od tells you only a general information like whether the material is bonded or not. The visual test shall be performed to confirm whether substantial other bonding tests are required, and/or to identify the area that the bonding tests shall be conducted. Optical microscope shall be used to evaluate
48、the bonding interface of glass to silicon and glass to glass. An infrared (IR) camera shall be used to observe voids existing in the bonding interface of silicon to silicon NOTE Visual test is a simple qualitative test method. BS EN 62047-9:201162047-9 IEC:2011 7 3.2.2 Equipment One or a few equipme
49、nts of optical microscope, scanning acoustic microscope, scanning electron microscope (SEM), transmission electron microscope (TEM), and IR or optical camera can be used. 3.2.3 Procedure Steps to measure voids areas are as follows: a) To observe voids, use the IR or optical microscope. b) To take images of voids, use the IR or optical camera, or scanning acoustic microscope. c) Measure voids areas using the observed
