1、 559932014/IEC/TS 61836:2007 , IEC/TS 61836:2007Solar photovoltaic energy systems Terms, definitions and symbols(IDT) 1 - ()2 039 , - , 3 - 8 2014 . 326-4 IEC/S 61836:2007 . , (IEC/TS 61836:2007 Solarphotovoltaic energy systems Terms, definitions and symbols). - 1.52012 ( 3.5). - 5 1.02012 ( 8). ( 1
2、 ) , -.() - . , - (gost.ru) , 2015 , - - II 5599320141 .12 13 13.1 13.2 93.3 133.4 .223.5 353.6 373.7 423.8 463.9 473.10 .484 4950 52 65 .79 () - 81III 559932014 , Solar photovoltaic energy systems. Terms, definitions and symbols 201501011 ()- , , - .2 : 60904-3:1989 . 3. (IEC 60904-3:1989, Photovol
3、taic devices Part 3:Measurement principles for terrestrial photovoltaic (PV) solar devices with reference spectral irradiance data)3 3.1 , , - . - 3.2. 3.3.3.1.1 : .amorphous photovoltaicmaterial3.1.2 . / , 3.1.58).amorphous silicon3.1.3 : , .anti-reflective coating3.1.4 . / , 3.1.25).back surface f
4、ield effect3.1.5 , eV: , - .band gap energy3.1.6 , eV: , - .barrier energy1 559932014/IEC/TS 61836:2007 .3.1.7 (). / ( ), 3.1.37).bus lines3.1.8 ( ): , , .bypass diode (on a modu-le level)3.1.9 . /, 3.1.43). :cell) ; CIS: - (CuInSe2, CIS) ( );CIS photovoltaic cellb) : -, , , GaAs (III-V ), CdS/CdTe
5、(II-VI), CdS/CuInSe2.;compoundsemiconductorphotovoltaic cell) . , 3.8.5);concentrator photovoltaiccelld) : - , , ;dye-sensitizedphotovoltaic celle) : , , .integrated type photovol-taic cell 1 - ;f) . / , 3.1.9k);multijunction photovoltaiccellg) : , -,:/();organic photovoltaic cellh) P-N : , - P-N .P
6、N junction photovoltaiccell 2 . P-N , 3.1.34f);i) : , - ;Schottky barrier photovol-taic cellj) : , ;silicon photovoltaic cellk) : , , ;stacked photovoltaic celll) : - , -;tandem photovoltaic cellm) : , - .thin film photovoltaic cell 3 . / , 3.1.58e).2 5599320143.1.10 : P- N- .cell barrier 1 . 2 , -
7、, .3.1.11 P-N . P-N /P-N , 3.1.34).cell junction3.1.12 ; CIS. / (CIS),3.1.9).CIS photovoltaic cell3.1.13 . / ,3.1.9b).compoundsemiconductorphotovoltaic cell3.1.14 , %: , -, , - ().conversion efficiency . / , 3.4.16e).3.1.15 . / , 3.1.58b).crystalline silicon3.1.16 . /- , 3.1.43b).current .3.1.17 . /
8、 , 3.1.32a).Czochralski process3.1.18 , : , , .dark current3.1.19 . / , 3.1.43c).device3.1.20 : P- N-, - P-N .diffusion layer3.1.21 . / ,3.1.32b).directional solidification3.1.22 ( ): (, ), .donor (in photovoltaiccells)3.1.23 ( ): , .dopant (in photovoltaiccells) 1 N- , (-, ). 2 P- (, - ).3.1.24 . /
9、 , 3.1.9d).dye-sensitizedphotovoltaic cell3.1.25 . / , 3.1.43d).effect3 559932014a) : , , , , - .back-surface field effectb) : , , . .light-confinement effect3.1.26 . / , 1.3.32c).electromagnetic casting3.1.27 , eV: , () .IEV 111-14-37energy gap . .3.1.28 . / , 3.1.32d).float zone melting3.1.29 . /
10、, 3.1.37b).grid lines3.1.30 . P-N /, 3.1.34b).heterojunction3.1.31 : -, , - .hot spot , , . - , .3.1.32 : , .ingot manufacturing pro-cess) : - .Czochralski process 1 , ;b) : - .directional solidification 2 -, ;c) : - , .electromagnetic casting 3 , ;d) : - .float zone melting4 5599320143.1.33 . / , 3.1.9e).integrated type photovol-taic cell3.1.34 (): - ,
