KS C IEC 60749-16-2006 Semiconductor devices-Mechanical and climatic test methods-Part 16:Particle impact noise detection(PIND)《半导体器件 机械和气候试验方法 第16部分 粒子冲击噪声探测(PIND)》.pdf

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KS C IEC 60749-16-2006 Semiconductor devices-Mechanical and climatic test methods-Part 16:Particle impact noise detection(PIND)《半导体器件 机械和气候试验方法 第16部分 粒子冲击噪声探测(PIND)》.pdf_第4页
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1、 KSKSKSKS SKSKSKS KSKSKS SKSKS KSKS SKS KS 2006 11 30 http:/www.kats.go.krKS C IEC 6074916 16: KS C IEC 60749 16: 2006 (2011 )C IEC 60749 16: 2006 : ( ) ( ) ( ) ( ) : (http:/www.standard.go.kr) : : 2006 11 30 : 2011 12 13 2011-0563 : : ( 02-509-7294) (http:/www.kats.go.kr). 10 5 , . ICS 31.080.01 KS

2、 C IEC 16: 60749 16: 2006(2011 ) Semiconductor devices Mechanical and climatic test methods Part 16: Particle impact noise detection(PIND) 2003 1 IEC 60749 16 Semiconductor devices Mechanical and climatic test methods Part 16: Particle impact noise detection(PIND) . 1. , (loose particle) . . 2. . 2.

3、1 (run) . . 3. , / . . . , . 4. ( ) . a) ( ) : 200 m/s2 ,40250 Hz b) / : (10 0002 000) m/s2 : 100 s / ( ) . (co-test system) , 250 ms . (505) % . c) ( ) : 150160 KHz 10 V/Pa (7.53) dB C IEC 60749 16: 2006 2 d) ( ) : (602) dB (c) : 10 mV e) ( ) : (201) mV. / ( ) c), d), e) : 3060 (peak to peak) 20 mV

4、 f) (c) g) , 250 V 20 % (c) . 5. KS C IEC 61340 5 1( 5 1: ) ESD . a) / ( 1 ). b) (10 0002 000) m/s2 . c) . . d) 4. e) . e) , . , . , . . f) . 3 (31) 3 (31) 3 (31) 3 C IEC 60749 16: 2006 3 (31) g) . 250 ms . 6. 4. e) , . 7. () ( ) 100 % PIND , 5 . , PIND . 1 % , 5 . . 5 1 % PDA , 25 % . 8. 1 . 1 (1)

5、mm Hz 1.00 130 1.011.25 120 1.261.50 110 1.511.75 100 1.762.00 90 2.002.25 80 2.262.50 70 2.50 60 (1) . 9. (1 5 ) . a) (1 5 )(7. ) b) (7. ) c) (6., 7. ) d) (7. ) e) ( “n” 100 .)(7. ) 16 : 153787 1 92 3(13) (02)26240114 (02)2624 0148 9 http:/ KSKSKSSKSKS KSKS SKS KSKS SKSKS KSKSKSKorean Agency for Technology and Standards http:/www.kats.go.kr KS C IEC 60749 16: 2006 Semiconductor devicesMechanical and climatic test methodsPart 16:Particle impact noise detection(PIND)ICS 31.080.01

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