KS M ISO 287-2009 Paper and board-Determination of moisture content of a lot-Oven-drying method《纸和纸板 成批纸和纸板中水分含量的方法 烘干法》.pdf

上传人:orderah291 文档编号:819822 上传时间:2019-02-11 格式:PDF 页数:14 大小:310.46KB
下载 相关 举报
KS M ISO 287-2009 Paper and board-Determination of moisture content of a lot-Oven-drying method《纸和纸板 成批纸和纸板中水分含量的方法 烘干法》.pdf_第1页
第1页 / 共14页
KS M ISO 287-2009 Paper and board-Determination of moisture content of a lot-Oven-drying method《纸和纸板 成批纸和纸板中水分含量的方法 烘干法》.pdf_第2页
第2页 / 共14页
KS M ISO 287-2009 Paper and board-Determination of moisture content of a lot-Oven-drying method《纸和纸板 成批纸和纸板中水分含量的方法 烘干法》.pdf_第3页
第3页 / 共14页
KS M ISO 287-2009 Paper and board-Determination of moisture content of a lot-Oven-drying method《纸和纸板 成批纸和纸板中水分含量的方法 烘干法》.pdf_第4页
第4页 / 共14页
KS M ISO 287-2009 Paper and board-Determination of moisture content of a lot-Oven-drying method《纸和纸板 成批纸和纸板中水分含量的方法 烘干法》.pdf_第5页
第5页 / 共14页
点击查看更多>>
资源描述

1、 KSKSKSKS KSKSKSK KSKSKS KSKSK KSKS KSK KS KS M ISO 287 KS M ISO 287 :2009 2009 12 21 http:/www.kats.go.krKS M ISO 287:2009 : ( ) ( ) ( ) ( ) ( ) ( ) : (http:/www.standard.go.kr) : : 1962 7 8 : 2009 12 21 2009-0835 : : ( 02-509-7278) (http:/www.kats.go.kr). 10 5 , . KS M ISO 287:2009 Paper and board

2、Determination of moisture content of a lot Oven-drying method 2009 3 ISO 287, Paper and boardDetermination of moisture content of a lotOven-drying method , . 1 . 8. . , . 2 . . ( ) . KS M ISO 186, 3 , . 3.1 w H 2 O . . . 3.2 0.1 % KS M ISO 287:2009 2 4 , . . 5 5.1 , 0.05 % . 5.2 , . 5.3 , (1052) . 6

3、 , (5.2) . (5.1) . 7 (units) KS M ISO 186 . . . 8 , 8.1 , 8.2 8.3 . 8.2 8.2.1 8.2.1.1 225 g/m 2 . . 4 . . 50 g . (m 0 ) . . 50 g (bulk) 25 g KS M ISO 287:2009 3 . . 8.2.1.2 225 g/m 2 . . 50 g 50 mm75 mm, 150 mm (strips) . . . (m 0 ) . . 8.2.1.3 , 8.2.1.1 8.2.1.2 . 50 g . , 1 1 2 50 mm 75 mm 4 . . 15

4、0 mm . . :mm A B C D E 1 () KS M ISO 287:2009 4 , 2 2 . 50 g . , (m 0 ) . . 50 g (bulk) 25 g . . 8.2.2 KS M ISO 186 8.2.2.1 8.2.2.3 . 8.2.2.1 225 g/m 2 4 , 8.2.1.1 . . 8.2.2.2 225 g/m 2 4 , 8.2.1.2 . 8.2.2.3 , 8.2.2.1 8.2.2.2 8.2.1.3 . 8.2.3 8.2.3.1 . 225 g/m 2 , 225 g/m 2 . . 5 mm . 50 mm75 mm , 15

5、0 mm . . , 50 g . . (m 0 ) . KS M ISO 287:2009 5 . 50 g (bulk) 25 g . . 8.2.3.2 , 50 mm75 mm 8.2.3.1 . . 8.3 , , . 8.3.1 50 mm75 mm 150 mm . 3 50 g . . (m 0 ) . . . , 50 mm75 mm . 50 g (bulk) 25 g . , . 8.3.2 100 mm100 mm . 8.2.1.1 . 8.3.3 50 mm75 mm, 150 mm 8.2.1.1 . 3 . . . 9 9.1 KS M ISO 287:2009

6、 6 (5.2) (5.3) . , (1052) . . . 225 g/m 2 30 , 225 g/m 2 60 . . , (5.4) . . . . 9.2 . . . . . (3.2 ) . m 0 0.1 % m 1 . 10 10.1 w H 2 O (1) . w H 2 O 100 0 1 0 m m m (1) m 0: (g)( 4 ) m 1: (g)( 4 ) , . . 10.2 0.1 % . 11 KS M ISO 287:2009 7 11.1 10 ( .) 10 . . 1 . 1 % , s r % , r 50 g/m 2 10 6.13 0.13

7、 2.1 0.37 225 g/m 2 10 5.56 0.05 0.97 0.15 225 g/m 2 10 5.21 0.22 4.2 0.60 1 r1.96 r s 2 95 % . 2 ( ) CVs r 100/ . , . 11.2 . . 12 12.1 12.2 12.3 . , . a) b) (50 g ) . KS M ISO 287:2009 8 12.2 a) b) c) d) 12.3 a) b) c) d) e) 8.2 8.3 KS M ISO 287:2009 9 1 ISO 638, Paper, board and pulpsDetermination

8、of dry matter contentOven-drying method 153787 1 92 3(13) (02)26240114 (02)262401489 http:/ KS M ISO 287 :2009 KSKSKS SKSKS KSKS SKS KS SKS KSKS SKSKS KSKSKS Paper and board Determination of moisture content of a lot Oven-drying method ICS 85.060 Korean Agency for Technology and Standards http:/www.kats.go.kr

展开阅读全文
相关资源
猜你喜欢
  • DLA MIL-PRF-19500 716 VALID NOTICE 1-2010 Semiconductor Device Diode Non-Hermetic Epoxy Surface Mount Silicon Unipolar Transient Voltage Suppressor Types 1N5555UEG through 1N5558UE .pdf DLA MIL-PRF-19500 716 VALID NOTICE 1-2010 Semiconductor Device Diode Non-Hermetic Epoxy Surface Mount Silicon Unipolar Transient Voltage Suppressor Types 1N5555UEG through 1N5558UE .pdf
  • DLA MIL-PRF-19500 717 VALID NOTICE 1-2010 Semiconductor Device Diode Non-Hermetic Epoxy Surface Mount Silicon Bidirectional Transient Voltage Suppressor Types 1N6036AUEG through 1N .pdf DLA MIL-PRF-19500 717 VALID NOTICE 1-2010 Semiconductor Device Diode Non-Hermetic Epoxy Surface Mount Silicon Bidirectional Transient Voltage Suppressor Types 1N6036AUEG through 1N .pdf
  • DLA MIL-PRF-19500 718 VALID NOTICE 1-2008 Semiconductor Device Diode Silicon Bipolar Transient Voltage Suppressor Types 1N6950 through 1N6986 JAN JANTX JANTXV and JANS.pdf DLA MIL-PRF-19500 718 VALID NOTICE 1-2008 Semiconductor Device Diode Silicon Bipolar Transient Voltage Suppressor Types 1N6950 through 1N6986 JAN JANTX JANTXV and JANS.pdf
  • DLA MIL-PRF-19500 718 VALID NOTICE 2-2013 Semiconductor Device Diode Silicon Bipolar Transient Voltage Suppressor Types 1N6950 through 1N6986 JAN JANTX JANTXV and JANS.pdf DLA MIL-PRF-19500 718 VALID NOTICE 2-2013 Semiconductor Device Diode Silicon Bipolar Transient Voltage Suppressor Types 1N6950 through 1N6986 JAN JANTX JANTXV and JANS.pdf
  • DLA MIL-PRF-19500 722 C-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6902UTK3 1N6903UTK3 1N6904UTK3 1N6905UTK3 1N6902UTK3CS 1N6903UTK3CS 1N6904UTK3CS 1N6905UT1.pdf DLA MIL-PRF-19500 722 C-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6902UTK3 1N6903UTK3 1N6904UTK3 1N6905UTK3 1N6902UTK3CS 1N6903UTK3CS 1N6904UTK3CS 1N6905UT1.pdf
  • DLA MIL-PRF-19500 723 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6910UTK2 1N6911UTK2 1N6912UTK2 1N6910UTK2CS 1N6911UTK2CS 1N6912UTK2CS 1N6910UTK2AS 1N6911.pdf DLA MIL-PRF-19500 723 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6910UTK2 1N6911UTK2 1N6912UTK2 1N6910UTK2CS 1N6911UTK2CS 1N6912UTK2CS 1N6910UTK2AS 1N6911.pdf
  • DLA MIL-PRF-19500 724 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6920UTK4 1N6921UTK4 1N6922UTK4 1N6920UTK4CS 1N6921UTK4CS 1N6922UTK4CS 1N6920UTK4AS 1N6921.pdf DLA MIL-PRF-19500 724 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6920UTK4 1N6921UTK4 1N6922UTK4 1N6920UTK4CS 1N6921UTK4CS 1N6922UTK4CS 1N6920UTK4AS 1N6921.pdf
  • DLA MIL-PRF-19500 725 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6930UTK1 1N6931UTK1 1N6932UTK1 1N6930UTK1CS 1N6931UTK1CS 1N6932UTK1CS 1N6930UTK1AS 1N6931.pdf DLA MIL-PRF-19500 725 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6930UTK1 1N6931UTK1 1N6932UTK1 1N6930UTK1CS 1N6931UTK1CS 1N6932UTK1CS 1N6930UTK1AS 1N6931.pdf
  • DLA MIL-PRF-19500 726 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6940UTK3 1N6941UTK3 1N6942UTK3 1N6940UTK3CS 1N6941UTK3CS 1N6942UTK3CS 1N6940UTK3AS 1N6941.pdf DLA MIL-PRF-19500 726 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6940UTK3 1N6941UTK3 1N6942UTK3 1N6940UTK3CS 1N6941UTK3CS 1N6942UTK3CS 1N6940UTK3AS 1N6941.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1