1、 g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g38g50g51g60g53g44g42g43g55g3g47g36g58devices Part 3: Thin film standard test piece for tensile testingThe European Standard EN 62047-3:2
2、006 has the status of a British StandardICS 31.080.99Semiconductor devices Micro-electromechanical BRITISH STANDARDBS EN 62047-3:2006BS EN 62047-3:2006This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 November 2006 BSI 2006ISBN 0 580 49741 0
3、Amendments issued since publicationAmd. No. Date Commentscontract. Users are responsible for its correct application.Compliance with a British Standard cannot confer immunity from legal obligations.National forewordThis British Standard was published by BSI. It is the UK implementation of EN 62047-3
4、:2006. It is identical with IEC 62047-3:2006.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on EPL/47 can be obtained on request to its secretary.This publication does not purport to include all the necessary pr
5、ovisions of a EUROPEAN STANDARD EN 62047-3 NORME EUROPENNE EUROPISCHE NORM September 2006 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050
6、 Brussels 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62047-3:2006 E ICS 31.080.99 English version Semiconductor devices - Micro-electromechanical devices Part 3: Thin film standard test piece for tensile testing (IEC 620
7、47-3:2006) Dispositifs semiconducteurs - Dispositifs microlectromcaniques Partie 3: Eprouvette dessai normalise en couche mince pour lessai de traction (CEI 62047-3:2006) Halbleiterbauelemente - Bauteile der Mikrosystemtechnik Teil 3: Dnnschicht-Standardmikroprobe fr die Prfung der Zugbeanspruchung
8、(IEC 62047-3:2006) This European Standard was approved by CENELEC on 2006-09-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists a
9、nd bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the respo
10、nsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece,
11、Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. Foreword The text of document 47/1866/FDIS, future edition 1 of IEC 62047-3, prepared by IEC TC 47, Semic
12、onductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 62047-3 on 2006-09-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2007-
13、06-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2009-09-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 62047-3:2006 was approved by CENELEC as a European Standard without any modification. _
14、2 EN 62047-3:2006CONTENTS 1 Scope.4 2 Normative references .4 3 Test piece materials .4 4 Test piece fabrications .4 5 Plane shape of test piece .5 6 Test piece thickness.5 7 Gauge mark5 8 Test5 9 Document attached to standard test pieces 6 Annex A (informative) Test piece .7 3 Annex ZA (normative)
15、Normative references to international publications with their corresponding European publications8 EN 62047-3:2006SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 3: Thin film standard test piece for tensile testing 1 Scope This International Standard specifies a standard test piece, which
16、 is used to guarantee the propriety and accuracy of a tensile testing system for thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for micro-electromechanical systems (MEMS), micromachines and similar devices. This International Standa
17、rd is based on such a concept that a tensile testing system can be guaranteed in propriety and accuracy, when the measured tensile strengths of the standard test pieces, whose tensile strength is pre-determined, are within the designated range. It also specifies the test pieces to minimize character
18、istics deviation among the pieces. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments)
19、applies. IEC 62047-2, Semiconductor devices Micro-electromechanical devices Part 2: Tensile testing method of thin film materials ISO 17561, Fine ceramics (advanced ceramics, advanced technical ceramics) Test method for elastic moduli of monolithic ceramics at room temperature by sonic resonance 3 T
20、est piece materials The test piece should be made of a material of known mechanical properties. Single crystal silicon is one of the candidates of the test piece material. For a tensile testing system for ductile materials, ductile materials can be used as additional materials. 4 Test piece fabricat
21、ions The deposition process of the test piece material and the fabrication process of the test piece should be carried out under a well-defined specification. 4 EN 62047-3:20065 Plane shape of test piece The dimensions of a test piece, such as parallel length, width and gauge length, shall be specif
22、ied within the accuracy range of 1 %. The parallel length of the test piece shall be more than 2,5 times the width. The curve part between the gripped ends and the parallel part should have a large enough radius of curvature so that it does not fracture at the curve part due to stress concentration.
23、 The shape of the curve part should be smooth enough so that it does not fracture at the curve part. (See Clause A.1.) The substrate under the test piece shall be removed in order that the remaining substrate does not affect the test results. It is required that the process, which removes the substr
24、ate material, should not damage the test piece. 6 Test piece thickness Each test piece thickness shall be measured directly. A non-contact type method is suitable for the thickness measurement. However, when the direct thickness measurement of the test piece by stylus profiler might damage the speci
25、men, the thickness may be measured at the vicinity of the specimen. The position of the thickness measurement should be determined within the area where the test piece thickness can be estimated within the accuracy range of 1 % considering thickness distribution in the wafer. See Clause A.2. 7 Gauge
26、 mark Gauge marks should be formed on the test piece in order to measure the elongation. The gauge length should be less than 80 % of the parallel length and more than twice the width. The gauge marks should not restrict the elongation of the test piece and should have a small influence on the test
27、result. For this reason, the gauge mark should be thin as long as contrast is obtained, or the elastic modulus and the internal stress of the material used for the gauge marks should be much lower than those of the test piece material. The thickness of the gauge marks shall not be above 1 % of the t
28、est piece thickness. 8 Test The test shall be carried out for at least ten standard test pieces, which were fabricated in the same fabrication process, preferably in the same fabrication lot, more preferably on the same wafer. The details of the tensile testing method are described in IEC 62047-2. T
29、he propriety of the test system is evaluated by the average values and standard deviations of the tensile strength, Youngs modulus and the maximum total elongation. (See Clause A.3.) If there is no region of linear stress-strain relation, Youngs modulus should be determined based on other standards
30、(e.g., ISO 17561). 5 EN 62047-3:20069 Document attached to standard test pieces A supplier of the standard test pieces should attach the following document: a) reference to this International Standard, i.e. IEC 62047-3; b) identification of the test piece; c) material; d) shape and dimension of the
31、test piece; e) expected mechanical properties (Youngs modulus, the tensile strength,.). 6 EN 62047-3:2006Annex A (informative) Test piece A.1 Photomask for the test piece A test part, a fixed part and a gripped end should be connected using curve parts with an appropriate curvature in order not to b
32、reak at other than the test part by stress concentration. Care must be taken to the writing method of photo mask in the case of fabrication of the curved part by photolithography. The curve part is treated digitally in photo mask writing in general raster scanning, so that the real curve pattern bec
33、omes micro gathers. This area has a possibility to become a starting point of fracture. Therefore, it is required to reduce gathers considering stress concentration. Vector scanning is recommended for the curve part writing. A.2 Measurement of test piece thickness According to the state of art, a th
34、in silicon layer on the SOI wafer and a thin metal film on the wafer deposited by sputtering, CVD (Chemical Vapour Deposition), etc., have 20 % thickness deviation. Consequently, the above error is included in test results, unless the thickness of the test piece is measured piece to piece. The thick
35、ness for every test piece die on the wafer should be measured by arranging an etching pattern for thickness measurement in a thin film area near the test piece pattern on the wafer, die by die. However, the estimation of the test piece thickness is required by the thickness measurement near the area
36、. Since the typical diameter of a wafer and the typical dimension of a test piece are 100 mm and 100 m, respectively, the influence of thickness deviation on thickness measurement accuracy is reduced to about 1 % by measuring within the area apart from the test piece 50 times the typical test piece
37、dimension. 20 % (100 m 50) / 100 mm = 1 % The thin film thickness measurement with the 1 % accuracy is required. For example, 1 nm accuracy is required for the 0,1 m thickness measurement with the 1 % accuracy. It is difficult at the present condition to measure many test pieces with such accuracy.
38、Care must be taken to the thickness measuring error. As thickness measuring methods, a stylus method, optical methods such as an interferometer and an ellipsometer, or a fluorescence X-rays method should be selected considering the characteristics of the thin film. A.3 The test piece number for the
39、measurement Since single crystal silicon used as standard test pieces is a brittle material, it is expected that a certain amount of variation is in the mechanical characteristics, especially tensile strength. Conventionally, the number of the test piece has been specified in an ISO standard for the
40、 measurement of mechanical characteristics for brittle materials considering statistic distribution of such material strength. About ten test pieces have been required for calculation of an average value and a Weibull distribution in these standards. _ 7 EN 62047-3:2006Annex ZA (normative) Normative
41、 references to international publications with their corresponding European publications The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced docum
42、ent (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 62047-2 -1)Semiconductor devices - Micro-electromechanical devices Part 2: Tensile testing m
43、ethod of thin film materials EN 62047-2 20062)ISO 17561 -1)Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for elastic moduli of monolithic ceramics at room temperature by sonic resonance - - 1)Undated reference. 2)Valid edition at date of issue. 8 EN 62047-3:2006blankBS
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