1、BRITISH STANDARD BS IEC 60747-8-4:2004 Discrete semiconductor devices Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications) ICS 31.080.30 BS IEC 60747-8-4:2004 This British Standard was published under the authority of the Standards Policy and Strat
2、egy Committee on 9 November 2004 BSI 9 November 2004 ISBN 0 580 44729 4 National foreword This British Standard reproduces verbatim IEC 60747-8-4:2004 and implements it as the UK national standard. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, w
3、hich has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international publications referred to in this document may be found in the BSI Catalogue under the section entitl
4、ed “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance
5、with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related inter
6、national and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the IEC title page, pages 2 to 61 and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendm
7、ents issued since publication Amd. No. Date Comments NORME INTERNATIONALE CEI IECINTERNATIONAL STANDARD 60747-8-4 Premire dition First edition 2004-09Dispositifs discrets semiconducteurs Partie 8-4: Transistors semiconducteurs oxyde mtallique effet de champ (MOSFET) pour les applications de commutat
8、ion de puissance Discrete semiconductor devices Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications Numro de rfrence Reference number CEI/IEC 60747-8-4:2004 BSIEC6074784:2004270674-8-4 CEI :02 40 2 CONTENTS FOREWORD.5 1 Scope.7 2 Normative referenc
9、es .7 3 Terms and definitions .7 3.1 General terms .7 3.2 Equivalent circuit.7 3.3 Terms related to ratings and characteristics 8 3.4 Conventional used terms.12 4 Letter symbols12 4.1 Additional general subscripts.12 4.2 List of additional letter symbols .13 5 Essential ratings and characteristics.1
10、3 5.1 General .13 5.2 Ratings (limiting values) 13 5.3 Characteristics 15 6 Measuring methods 17 6.1 General .17 6.2 Verification of ratings (limiting values) .17 6.3 Methods of measurement 36 7 Acceptance and reliability (revised from Clause 7 of IEC 60747-8) .56 7.1 Endurance and reliability tests
11、, and test methods56 7.2 Type tests and routine tests 58 Bibliography61 Figure 1 Equivalent circuit of MOSFET with inverse diode .8 Figure 2 Integral times for the turn-on energy E onand turn-off energy E off .9 Figure 3 Basic waveforms to specify the gate charges .11 Figure 4 Circuit diagram for te
12、sting of drain-source voltage18 Figure 5 Circuit diagram for testing of gate-source voltage.19 Figure 6 Circuit diagram for testing of gate-drain voltage .20 Figure 7 Circuit diagrams for the measurement of drain off-state current .21 Figure 8 Basic circuit for the testing of drain current 22 Figure
13、 9 Circuit diagram for testing of peak drain current.23 Figure 10 Basic circuit for the testing of reverse drain current of MOSFETs.24 Figure 11 Basic circuit for the testing of peak reverse drain current of MOSFETs.25 Figure 12 Circuit diagram for verifying dv/dt .26 Figure 13 Example of graphical
14、representation (current waveform during MOSFET forward recovery) .26 BSIEC6074784:20042 BSIEC6074784:20042370674-8-4 CEI :02 40 3 Figure 14 Example of graphical representation (voltage waveform during MOSFET forward recovery)27 Figure 15 Circuit and pulse sequence for verifying forward-bias safe ope
15、rating area (FBSOA).28 Figure 16 Circuit diagram for verifying RBSOA.29 Figure 17 Test waveforms for verifying RBSOA30 Figure 18 Circuit for testing safe operating pulse duration at load short circuit.31 Figure 19 Waveforms of gate-source voltage V GS , drain current I Dand voltage V DSduring load s
16、hort-circuit condition SCSOA 32 Figure 20 Circuit for the inductive avalanche switching 33 Figure 21 Waveforms of I D , V DSand V GSduring unclamped inductive switching33 Figure 22 Waveforms of I D , V DSand V GSfor the non-repetitive avalanche switching .35 Figure 23 Circuit diagrams for the measur
17、ement of the drain-source breakdown voltage36 Figure 24 Circuit diagram for measurement of gate-source off-state voltage and gate-source threshold voltage.37 Figure 25 Circuit diagram for drain leakage (or off-state) current measurement .38 Figure 26 Circuit diagram for measuring of gate leakage cur
18、rent39 Figure 27 Basic circuit of measurement for on-state resistance40 Figure 28 On-state resistance40 Figure 29 Circuit diagram for switching time.42 Figure 30 Schematic switching waveforms and times.42 Figure 31 Circuit for determining the turn-on and turn-off power dissipation and/or energy 43 F
19、igure 32 Circuit diagram for the measurement gate charges.45 Figure 33 Basic circuit for the measurement of short-circuit input capacitance .46 Figure 34 Basic circuit for the measurement of short-circuit output capacitance (C oss ) 47 Figure 35 Circuit for the measurement of reverse transfer capaci
20、tance C rss 48 Figure 36 Circuit for the measurement of short-circuit internal gate resistance.49 Figure 37 Circuit diagram for MOSFET forward recovery time and recovered charge (Method 1) 50 Figure 38 Current waveform through MOSFET.51 Figure 39 Circuit diagram for MOSFET forward recovery time and
21、recovered charge (Method 2) 52 Figure 40 Current waveform through MOSFET.53 Figure 41 Circuit diagram for the measurement of drain-source reverse voltage 54 Figure 42 Circuit diagram for the measurement of repetitive peak drain-source reverse voltage55 Figure 43 Circuit for high-temperature blocking
22、57 Figure 44 Circuit for high-temperature gate bias 57 Figure 45 Circuit for intermittent operating life .58 Figure 46 Expected numbers of cycles versus temperature rise T vj .58 BSIEC6074784:20043 BSIEC6074784:20043470674-8-4 CEI :02 40 4 Table 1 Terms for MOSFET in this standard and the convention
23、al used terms for the inverse diode integrated in the MOSFET.12 Table 2 Failure defining characteristics and failure criteria.17 Table 3 Failure-defining characteristics for endurance and reliability tests .56 Table 4 Minimum items of type and routine tests for MOSFETs when applicable59 BSIEC6074784
24、:20044 BSIEC6074784:20044570674-8-4 CEI :02 40 5 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ DISCRETE SEMICONDUCTOR DEVICES Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications FOREWORD 1) The International Electrotechnical Commission (IEC) is a wor
25、ldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other
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27、ject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions de
28、termined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Com
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30、ch they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publica
31、tion and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any equipment declared to be in conformity with an IEC Publication. 6) All users should ensure th
32、at they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any na
33、ture whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenc
34、ed publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. Internati
35、onal Standard IEC 60747-8-4 has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47E/259/FDIS 47E/266/RVD Full information on the voting for th
36、e approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. BSIEC6074784:20045 BSIEC6074784:20045670674-8-4 CEI :02 40 6 This standard is to be read in conjunction with IEC 60747-1
37、 where the user will find all basic information on terminology (Chapter II); letter symbols (Chapter II); essential ratings and characteristics (Chapter III); measuring methods (including verification of ratings) (Chapter IV); acceptance and reliability (Chapter V). IEC 60747 consists of the followi
38、ng parts, under the general title Discrete semiconductor devices: Part 1: General Part 2: Rectifier diodes Part 3: Signal (including switching) and regulator diodes Part 4: Microwave devices Part 5: Optoelectronic devices Part 6: Thyristors Part 7: Bipolar transistors Part 8: Field-effect transistor
39、s Part 9: Insulated-gate bipolar transistors (IGBTs) Part 10: Generic specification for discrete devices and integrated circuits Part 11: Sectional specification for discrete devices Part 12: Sectional specification for optoelectronic devices Part 13: Part 14: Semiconductor sensors Part 15: Isolated
40、 power semiconductor devices Part 16: Microwave integrated devices. The committee has decided that the contents of this publication will remain unchanged until the maintenance result date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At
41、this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition, or amended. BSIEC6074784:20046 BSIEC6074784:20046770674-8-4 CEI :02 40 7 DISCRETE SEMICONDUCTOR DEVICES Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications 1
42、Scope This part of IEC 60747 gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes. Type B depletion (normally on) type. Type C enhancement (normally off) type. NOTE 1 MOSFETs for some applications may not have inverse diode ch
43、aracteristics in the data sheet. Special circuit element structures to eliminate body diode are under development for such applications. MOSFET applications such as motor control equipment need to specify the inverse diode characteristics in the MOSFET to use the inverse diode as a free wheeling dio
44、de. NOTE 2 MOSFET is classified as a kind of insulated gate field-effect transistor (IGFET) in IEC 60747-8. NOTE 3 The graphical symbol only for type C is used in this standard. It equally applies for the measurement of type B devices. 2 Normative references The following referenced documents are in
45、dispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60747-1:1983, Semiconductor devices Discrete devices and integrated circuits Part 1: G
46、eneral IEC 60747-2:2000, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes IEC 60747-8:2000, Semiconductor devices Part 8: Field-effect transistors. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 General
47、 terms General terms for MOSFETs are defined in 4.2 of IEC 60747-8. 3.2 Equivalent circuit MOSFETs generally (see NOTE 1 in Clause 1) contain an intrinsic inverse or body diode in parallel with the MOSFET itself. Figure 1 shows the equivalent circuit of an N-channel device. Polarities are reversed f
48、or P-channel devices. The diode is not shown in the normal graphical symbol. BSIEC6074784:20047 BSIEC6074784:20047870674-8-4 CEI :02 40 8 S D G IEC 1131/04 Figure 1 Equivalent circuit of MOSFET with inverse diode 3.3 Terms related to ratings and characteristics 3.3.1 rate of rise of off-state voltage dv/dt rate of rise of drain-source off-state voltage induced during reverse recovery period of the inverse diode 3.3.2 reverse-bias safe operating area RBSOA drain current versus drain-source voltage region in which the MOSFET is able to turned-off repetitively with clamped inductive lo
