1、 MIL-PRF-19500/421H 3 June 2012 SUPERSEDING MIL-PRF-19500/421G w/AMENDMENT 1 12 October 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP, COMPLEMENTARY, SILICON, TYPES 2N3838, 2N4854, AND 2N4854U, JAN, JANTX, AND JANTXV This specification is approved for
2、use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for unitized, dual transistors which c
3、ontain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Polarity designation. Voltages and currents of limits and test conditions shown herein ap
4、ply to the NPN transistor. For the PNP transistor, the values are the same, but the polarity designations are the opposite. 1.3 Physical dimensions. See figures 1 (6 lead flatpak), 2 (similar to TO-78), and 3 (surface mount). * 1.4 Maximum ratings. Types PT at TA = +25C RJARJAPTat TC= +25C (1) RJspR
5、JspTJand TSTGOne Total One Total One Total One Total transistor device transistor device transistor device transistor device 2N3838 2N4854 2N4854U W (2) 0.25 (4) 0.30 0.30 W (2) 0.35 (4) 0.60 0.60 C/W 350 350 350 C/W 290 290 290 W (3) 0.7 (5) 1.0 1.0 W (3) 1.4 (5) 2.0 2.0 C/W 250 175 (6) 110 C/W 125
6、 87 (6) 90 C -65 to +200 Types V1C-2CLead to case voltage ICTJVCBOVEBOVCEO2N3838 2N4854, 2N4854U V dc 120 120 V dc 120 120 mA dc 600 600 C 200 200 V dc 60 60 V dc 5 5 V dc 40 40 AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Ma
7、ritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversi
8、on measures necessary to comply with this document shall be completed by 3 September 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/421H 2 1.4 Maximum ratings. Continued. (1) TCrating does not apply to surface mount devices (2N48
9、54U). (2) For TA +25C, derate linearly 1.43 mW/C one transistor, 2.00 mW/C both transistors. (3) For TC +25C, derate linearly 4.0 mW/C one transistor, 8.0 mW/C both transistors. (4) For TA +25C, derate linearly 1.71 mW/C one transistor, 3.43 mW/C both transistors. (5) For TC +25C, derate linearly 5.
10、71 mW/C one transistor, 11.43 mW/C both transistors. (6) For U package the thermal resistance is RSP. 1.5 Primary electrical matching characteristics of each individual section. Characteristics apply to all case outlines. hFE5(1) VCE= 10 V dc IC= 150 mA dc hFE4(1) VCE= 10 V dc IC= 10 mA dc hFE2VCE=
11、10 V dc IC= 100 A dc VCE(sat)(1) IB= 15 mA dc IC= 150 mA dc VBE(sat)(1) IB= 15 mA dc1.5 IC= 150 mA dc Min Max 100 300 75 35 V dc 0.4 V dc 0.80 1.25 hfe VCE= 10 V dc IC= 20 mA dc f = 100 MHz CoboVCB= 10 V dc IE= 0 100 kHz f 1 MHz Non-latching VCE(2) t(on)See figure 4 t(off)See figure 5 ton+ toffSee f
12、igure 6 Min Max 2 10 pF 8 V dc 40 ns 45 ns 300 ns 18 (1) Pulsed (see 4.5.1). (2) See 4.5.2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/421H 3 Ltr Dimensions Notes Ltr Dimensions Notes Inches Millimeters Inches Millimeters Min Max M
13、in Max Min Max Min Max A .240 .290 6.10 7.37 G .100 TP 2.54 TP 6, 7 B .115 .160 2.92 4.06 H .050 1.27 C .030 .080 0.76 2.03 J .015 0.38 5 D .003 .006 0.08 0.15 4 K .050 TP 1.27 TP 6, 7 E .005 .035 0.13 0.89 L .070 .250 1.78 6.35 3, 4 F .010 .019 0.25 0.48 4, 6 M .260 .650 6.60 16.51 NOTES: 1. Dimens
14、ions are in inches. 2. Millimeters are given for general information only. 3. Maximum limit of this dimension does not apply to device supplied in a carrier. 4. All six leads. 5. Lead dimensions are uncontrolled in this zone. 6. Dimensions “F“, “G“, and “K“ to be measured in zone “H“. 7. Leads withi
15、n .005 inch (0.13 mm) total of true position (TP) at “H“ with maximum material condition. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of transistor type 2N3838 (all quality levels). Provided by IHSNot for ResaleNo reproduction or networki
16、ng permitted without license from IHS-,-,-MIL-PRF-19500/421H 4 Ltr Dimensions Notes Ltr Dimensions Notes Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max CD .305 .335 7.75 8.51 LS1 .0707 Nom. 1.796 Nom. 5 CH .140 .260 3.56 6.60 LS2 .1000 Nom. 2.540 Nom. 5 HD .335 .370 8.51 9.40
17、LU .016 .019 0.41 0.48 4, 7 HT .009 .125 0.23 3.18 TL .029 .045 0.74 1.14 6 LD .016 .021 0.41 0.53 3, 7 TW .028 .034 0.71 0.86 LL .500 1.750 12.70 44.45 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Measured in the zone beyond .250 inch (6.35 mm) fro
18、m the seating plane. 4. Measured in the zone .050 inch (1.27 mm) and .250 inch (6.35 mm) from the seating plane. 5. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below the seating plane of the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of
19、their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 6. Measured from the maximum diameter of the actual device. 7. All six leads. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
20、FIGURE 2. Physical dimensions of transistor type 2N4854 (all quality levels, similar to TO-78). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/421H 5 Ltr Dimensions Ltr Dimensions Inches Millimeters Inches Millimeters Min Max Min Max M
21、in Max Min Max A .058 .100 1.47 2.54 D2 .045 .055 1.14 1.40 A1 .026 .039 0.66 0.99 D3 .175 4.45 B1 .022 .028 0.56 0.71 E .240 .250 6.10 6.35 B2 .072 Ref. 1.83 Ref. E1 .250 6.35 B3 .006 .022 0.15 0.56 L1 .060 .070 1.52 1.78 D .165 .175 4.19 4.45 L2 .082 .098 2.08 2.49 D1 .095 .105 2.41 2.67 L3 .003 .
22、007 0.08 0.18 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers. FIGURE 3. Physi
23、cal dimensions of transistor type 2N4854U. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/421H 6 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
24、 section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documen
25、ts cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specif
26、ied, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these document
27、s are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a
28、conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requir
29、ements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before
30、contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: V1C-2C. Voltage difference between the collector of transistor one and that of transistor two. 3.4 Interface and p
31、hysical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 (flat pack), 2 (similar to TO-78) and 3 (surface mount) herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of l
32、ead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.4, 1.5, and table I. 3.6 Electrical test requirements. The electrical te
33、st requirements shall be the subgroups specified in tables I and II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/421H 7 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices sh
34、all be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspect
35、ion (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualificatio
36、n or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain qualification. 4.3 S
37、creening (JANTX and JANTXV levels only). Screening shall be in accordance with table E IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table
38、 E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) 9 Not applicable 10 48 hours minimum 11 ICBO2and hFE512 Burn-in (see 4.3.1) 80 hours minimum 13 Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 25 nA dc; whichever is greater for the
39、 2N3838. ICBO2= 100 percent of initial value or 5 nA dc; whichever is greater for the 2N4854, 2N4854U. hFE5= 15 percent of initial value. 14 Required (1) Shall be performed anytime after temperature cycling, screen 3a. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
40、nse from IHS-,-,-MIL-PRF-19500/421H 8 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc TA= room ambient as defined in the general requirements of MIL-STD-750, (see 4.5). 2N3838: PT= 175 mW each transistor (350 mw total device). 2N4854: PT= 300 mW each transi
41、stor (600 mW total device). 2N4854U: PT= 300 mW each transistor (600 mW total device). NOTE: No heat sink or forced air-cooling on the devices shall be permitted. 4.3.2 Thermal impedance (ZJXmeasurements). The ZJXmeasurements shall be performed in accordance withmethod 3131 of MIL-STD-750. a. IHforw
42、ard heating current 200 mA.minimum. b. IMmeasurement current . 5 mA. c. tHheating time 25 -30 ms. d. tMDmeasurement delay time 60 s maximum. e. VCEcollector to emitter 10 V. The maximum limit for ZJXunder these conditions are ZJX(maximum) = 45C/W. 4.4 Conformance inspection. Conformance inspection s
43、hall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not requ
44、ired to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the con
45、ditions specified for subgroup testing in 4.4.2.1 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, (JAN, JANTX, a
46、nd JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective actio
47、n. Whenever a failure is identified as wafer lot and /or wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failure mode has been implemented and the devices from the wa
48、fer lot are screened to eliminate the failure mode. Step Method Condition 1 1039 Steady-state life: Test condition B, 1,000 hours minimum, VCB= 10 dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.4. n = 45 devices, c = 0. 2 1039 HTRB: Test condition A, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/421H 9 4.4.2.2 Group B
