DLA MIL-PRF-19500 689 VALID NOTICE 2-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor N-Channel Silicon Types 2N7512 2N751.pdf

1、PERFORMANCE SPECIFICATIONSemiconductor Device, Field Effect Radiation Hardened (TotalDose and Single Event Effects) Transistor, N-Channel SiliconTypes 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, RMIL-PRF-19500/689, dated 15 February 2006, has been reviewed anddetermined to be valid for use in a

2、cquisition.NOTICE OFVALIDATIONINCH-POUNDMIL-PRF-19500/689NOTICE 215 July 2011NOTE: The activities above were interested in this document asof the date of this document. Since organizations andresponsibilities can change, you should verify the currency ofthe information above using the ASSIST Online database athttps:/assist.daps.dla.mil.AMSC N/A FSC 5961Custodians:Army - CRNavy - ECAir Force - 85DLA - CCOther - NAPreparing Activity:DLA - CCProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-