1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correction to TABLE I, IDDparameter. Added Appendix B to allow for the procurement of die. - glg 00-12-11 Raymond Monnin B Correction to Appendix B, added paragraph 10.2.4 Die code. Updated boilerplate references. ksr 02-01-15 Raymond Monnin C Ad
2、d 02 device representing an extended temperature device. Corrected (SEP) effective with no latch-up in paragraph 1.5; was 90.5 MeV-cm2/mg changed to 80 MeV-cm2/mg ksr 02-10-22 Raymond Monnin D Added devices 03 and 04, updated Table I. ksr 02-12-08 Raymond Monnin E Added devices 05 and 06 updated Tab
3、le I. Added case outline Y. Boilerplate update, part of 5 year review. ksr 07-03-29 Robert M. Heber F Corrected Table I, the post radiation limit for IDD2for devices 05 and 06. ksr 07-04-11 Robert M. Heber G Made corrections to case U dimension table symbol A, D, E1, and E2. ksr 09-09-24 Charles F.
4、Saffle REV G G G G SHEET 35 36 37 38 REV G G G G G G G G G G G G G G G G G G G G SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLU
5、MBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED SRAM, MONOLITHIC SILICON AND AGENCIES OF T
6、HE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-09-19 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-00536 SHEET 1 OF 38 DSCC FORM 2233 APR 97 5962-E222-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A
7、5962-00536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appr
8、opriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the us
9、er is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN shall be as shown in the following example: 5962 L 00536 01 T X C Federal RHA Device Device Case Lead stock class
10、 designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA desi
11、gnator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic nu
12、mber 1/ Circuit function Access time 01 9Q512 512K X 8-bit Radiation-hardened SRAM (MIL Temp) 25 ns 02 9Q512 512K X 8-bit Radiation-hardened SRAM (Extended Temp) 25 ns 03 9Q512 512K X 8-bit Radiation-hardened SRAM (MIL Temp) 20 ns 04 9Q512 512K X 8-bit Radiation-hardened SRAM (Extended Temp) 20 ns 0
13、5 9Q512E 512K X 8-bit Radiation-hardened SRAM (MIL Temp) 20 ns 06 9Q512E 512K X 8-bit Radiation-hardened SRAM (Extended Temp) 20 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements
14、 documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as spec
15、ified in the device manufacturers approved quality management plan 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style U See figure 1 36 Flat pack X See figure 1 36 Flat pack Y See figure 1 36
16、 Flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q, T and V or MIL-PRF-38535, appendix A for device class M. _ _ 1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also
17、be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absol
18、ute maximum ratings. 2/ 3/ Supply voltage range, (VDD) . -0.5 V dc to +7.0 V dc Voltage range on any input pin -0.5 V dc to +7.0 V dc Voltage range on any output pin -0.5 V dc to +7.0 V dc Input current, dc . + 10 mA Power dissipation . 1.0 W Case temperature range, (TC) (Devices 01, 03, and 05) -55
19、C to +125C Case temperature range, (TC) (Devices 02, 04, and 06) -40C to +125C Storage temperature range, (TSTG) -65C to +150C Junction temperature, (TJ) . +150C Thermal resistance, junction-to-case, (JC): Case X and U . +10C/W 1.4 Recommended operating conditions. Supply voltage range, (VDD) . +4.5
20、 V dc to +5.5 V dc Supply voltage, (VSS) . 0 V dc Input voltage, dc. 0 V dc to VDDCase temperature, (TC) (Devices 01, 03, and 05) -55C to +125C Case temperature, (TC) (Devices 02, 04, and 06) -40C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 50 - 300 rads(Si)/s) 5.0x 104
21、rads(Si) Dose rate upset . 4/ Dose rate survivability . 4/ Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets (Devices 01, 02, 03, and 04) . 1 MeV-cm2/mg 5/ (Devices 05 and 06) . 2.8 MeV-cm2/mg 6/ with no latch-up (Devices 01, 02, 03, and 04) 80 MeV-cm2/mg 5/ (Devic
22、es 05 and 06) . 110 MeV-cm2/mg 6/ Neutron irradiation . 4/ 1.6 Digital logic testing for device classes T, Q, and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) 100 percent 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The
23、 following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufactu
24、ring, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
25、 maximum levels may degrade performance and affect reliability. 3/ All voltage values in this drawing are with respect to VSS. 4/ When a value is determined per customer requirements, it shall be provided. 5/ Contact the device manufacturer for detailed lot information. 6/ Limits are guaranteed by d
26、esign or process, but not production tested unless specified by the customer through purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,
27、OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the S
28、tandardization Document Order Desk, 700 Robins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the s
29、olicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International,
30、 PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) EL
31、ECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally
32、 available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text o
33、f this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-3853
34、5, and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix
35、 A and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix B to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q,
36、T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall
37、 be as specified on figure 3. 3.2.4 Output load circuit. The output load circuit shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation test circuit. The radiation exposure circuit shall be maintained by the manufacturer und
38、er document revision control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OH
39、IO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 3.2.7 Functional tests. Various functional tests used to test this device are contained in appendix A. If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results sha
40、ll be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For device classes Q, T and V, alternate test patterns shall be under the control
41、of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electri
42、cal performance characteristics and post-irradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for
43、 each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of
44、not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/
45、compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of c
46、ompliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
47、 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements
48、of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acqui
