1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make correction to maximum power dissipation, PD, from 2.5 W to 830 mW in section 1.3. Make correction to thermal resistance, junction-to-case, JC, from 40C/W to 22C/W in section 1.3. Make correction to thermal resistance, junction-to-ambient, JA
2、, from 50C/W to150C/W in section 1.3. -rrp 11-01-04 C. SAFFLE REV SHEET REV A A A A A SHEET 15 16 17 18 19 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.d
3、la.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, SINGLE, HIGH SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING A
4、PPROVAL DATE 10-10-19 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-07233 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E135-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07233 DLA LAND AND MARITIME C
5、OLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are availa
6、ble and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 07233 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device
7、type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA
8、marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 RHF310 R
9、adiation hardened, single, high speed, current feedback, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requireme
10、nts for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator T
11、erminals Package style X See figure 1 8 Flat pack 1/ 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Al2O3ceramic header with metalized bottom side and pullback of 0.01 x 0.02 inches. Provided by IHSNo
12、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07233 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage: Single supply mode VCCwith
13、respect to GND = 6 V Dual supply mode . +VCC= +3 V, -VCC= -3 V Input voltage range (VIN) 2.5 V Differential input voltage (VID) 0.5 V 3/ Maximum power dissipation (PD) at TA = +25C for TJ= 150C . 830 mW 4/ Storage temperature range -65C to +150C Operating temperature range . -55C t o +125C Lead temp
14、erature (soldering, 10 seconds) +260C 5/ Maximum junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) 22C/W Thermal resistance, junction-to-ambient (JA) . 150C/W 1.4 Recommended operating conditions. Supply Voltage (VCC) 4.5 V to 5.5 V Common mode input voltage range (VICM) -VCC
15、 + 1.5 V to +VCC - 1.5 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. 6/ Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 300 krads(Si) Single event phenomenon (SEP) : No single event latch-up (SEL) up to effective LET . 110 MeV/(mg/cm) Single Event
16、Transient (SET) (sat = 2 x 10-5cm2/device) at effective LET . 110 MeV/(mg/cm2) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified,
17、 the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interfac
18、e Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maxim
19、um levels may degrade performance and affect reliability. 3/ Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 4/ Short circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers. 5/ Distance of not
20、 less than 1.5 mm from the device body and the same lead shall not be re-soldered until 3 minutes have elapsed. 6/ This part has been tested and does not demonstrate low dose rate sensitivity at 300 krads(Si). For low dose rate, the radiation end point limits for the noted parameters are guaranteed
21、for the conditions specified in MIL-STD- 883, method 1019, condition D. For high dose rate, the radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitt
22、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07233 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Docume
23、nt Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contr
24、act. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr
25、 Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2
26、.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS
27、 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function a
28、s described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, cons
29、truction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein
30、and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revi
31、sion level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits a
32、re as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. Provided by IHSNot for Resa
33、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07233 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +1
34、25C +VCC= 2.5 V, -VCC= -2.5 V unless otherwise specified Group A subgroups Device type Limits Unit Min Max Offset voltage VIO 1 01 -6.5 6.5 mV 2,3 -6.5 6.5 Input bias current +IIB 1 01 12 A 2,3 15 Input bias current -IIB 1 5 A 2,3 7 Common mode rejection ratio CMRR VIC= 1 V 1 01 57 dB 2,3 55 Supply
35、voltage rejection ratio SVRR VCC= 3.5 V to 5 V 1 01 65 dB 2,3 50 Supply current ICC No load 1 01 530 A 2,3 600 Transimpedance ROL RL= 1 k, VOUT= 1 V 1 01 0.6 M 2,3 0.5 Output sink current ISINK Output to GND 1 01 70 mA 2,3 70 Output source current ISOURCE 1 01 -60 mA 2,3 -60 Low level output voltage
36、 VOL RL= 100 1 01 -1.55 V 2,3 -1.5 High level output voltage VOH 1 01 1.55 V 2,3 1.5 -3dB Bandwidth BW RL= 1 k, AV= +2, Rfb= 3 k 4 01 70 MHz 5,6 70 Slew rate 2/ +SRVOUT= 2 VPP, AV= +2, 4, 5, 6 01 90 V/s -SRRL= 100 90 1/ RHA devices supplied to this drawing have been characterized through all levels
37、M, D, P, L, R, and F of irradiation. However, this device is only tested at the “F” level for high and low dose rates. Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. The radiat
38、ion end points limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D for low dose rate and condition A for high dose rate. 2/ Controlled via design or process and is not directly tested. Characterized on initial design release and upon d
39、esign or process changes which affect this parameter. TABLE IB. SEP test limits. 1/ 2/ 3/ Device type VCC= 2.8 V Bias for latch-up test VCC= 2.8 V no latch-up LET = 3/ 4/ Effective LET SET MeV/(mg/cm2) Maximum device cross section 01 LET = 110 2 x 10-5cm2/device 110 1/ For SEP test conditions, see 4
40、.4.4.4 herein 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. Test plan must be approved by TRB and qualifying activity. 3/ Worst case temperature is TA = +125C 10C for SEL test and TA = +25C 10C for SET test. 4/ Tested t
41、o a LET of 110 MeV/(mg/cm) for device type 01 with no latch-up (SEL). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07233 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2
42、234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on t
43、he device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certificati
44、on mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML
45、-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of com
46、pliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, append
47、ix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device c
48、lass M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the revi
