DLA SMD-5962-91669 REV A-2008 MICROCIRCUIT LINEAR 5 V LOW-DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《单片硅 5V稳压调节器 线性微电子电路》.pdf

上传人:twoload295 文档编号:700040 上传时间:2019-01-01 格式:PDF 页数:10 大小:65.70KB
下载 相关 举报
DLA SMD-5962-91669 REV A-2008 MICROCIRCUIT LINEAR 5 V LOW-DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《单片硅 5V稳压调节器 线性微电子电路》.pdf_第1页
第1页 / 共10页
DLA SMD-5962-91669 REV A-2008 MICROCIRCUIT LINEAR 5 V LOW-DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《单片硅 5V稳压调节器 线性微电子电路》.pdf_第2页
第2页 / 共10页
DLA SMD-5962-91669 REV A-2008 MICROCIRCUIT LINEAR 5 V LOW-DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《单片硅 5V稳压调节器 线性微电子电路》.pdf_第3页
第3页 / 共10页
DLA SMD-5962-91669 REV A-2008 MICROCIRCUIT LINEAR 5 V LOW-DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《单片硅 5V稳压调节器 线性微电子电路》.pdf_第4页
第4页 / 共10页
DLA SMD-5962-91669 REV A-2008 MICROCIRCUIT LINEAR 5 V LOW-DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《单片硅 5V稳压调节器 线性微电子电路》.pdf_第5页
第5页 / 共10页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. - ro 08-07-02 R. HEBER REV SHET REV SHET REV STATUS REV A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY MARCIA KELLEHER DEFENSE SUPPLY CENTER COLUMBUS STA

2、NDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-03 MICROCIRCUIT, LINEAR, 5 V LOW DROPOUT VOLTA

3、GE REGULATOR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-91669 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E262-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91669 DEFENSE SUPPL

4、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead

5、finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91669 01 M P A Federal stock class designator RHA designator

6、(see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. De

7、vice class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit fun

8、ction 01 TL751L05 5 V, low dropout voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compli

9、ant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P G

10、DIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without

11、license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Continuous input voltage . 26 V Transient input voltage (TA= +25C) 60 V Continuous reverse inp

12、ut voltage -15 V Transient reverse input voltage ( t 100 ms) -50 V Storage temperature range . -65C to +150C Junction temperature (TJ) . +150C Lead temperature (soldering, 10 seconds) +260C Power dissipation (PD) : Case outline P . 1050 mW 2/ Case outline 2 1375 mW 2/ Thermal resistance, junction-to

13、-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) : Case outline P . 180C/W Case outline 2 65C/W 1.4 Recommended operating conditions. Input voltage range (VI) . 6.0 V min, 26.0 V max High level ENABLE voltage (VIH) 2.0 V min, 15.0 V max Low level ENABLE voltage (VIL): TA= +

14、25C 3/ . -0.3 V min, 0.8 V max TA= -55C to +125C 3/ . -0.15 V min, 0.8 V max Output current (IO) 0 mA min, 150 mA max Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and h

15、andbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMEN

16、T OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these docume

17、nts are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maxim

18、um levels may degrade performance and affect reliability. 2/ Derate linearly at 8.4 mW/C above 25C for case outline P and at 11.0 mW/C above 25C for case outline 2. 3/ The algebraic convention, in which the least positive (most negative) value is designated minimum, is used for ENABLE voltage levels

19、 and temperature only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In

20、 the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. Th

21、e individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The in

22、dividual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 a

23、nd herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance charact

24、eristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The elect

25、rical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entir

26、e SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for

27、device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appen

28、dix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a man

29、ufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the

30、requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be p

31、rovided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Veri

32、fication and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcirc

33、uit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 76 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596

34、2-91669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C VI= +14 V, IO= 10 mA Group A subgroups Device type Limits Unit unless otherwise specified Min Max O

35、utput voltage VOVI= 6 V to 26 V, 1 01 4.80 5.20 V IO= 0 mA to 150 mA 2,3 4.75 5.25 Input regulation VRIVI= 9 V to 16 V, TA= +25C 1 01 10 mV VI= 6 V to 26 V, TA= +25C 30 Ripple rejection 2/ RR VI= 8 V to 18 V, f = 120 Hz, TA= +25C 1 01 60 dB Output regulation VROIO= 5 mA to 150 mA, TA= +25C 1 01 50 m

36、V Dropout voltage VDOIO= 10 mA, TA= +25C 1 01 0.2 V IO= 150 mA, TA= +25C 0.6 Bias current IBIO= 150 mA, TA= +25C 1 01 12 mA IO= 10 mA, VI= 6 V to 26 V 1,2,3 2 1/ All characteristics are measured with a 0.1 F capacitor across the input and a 10 F capacitor, with equivalent series resistance of less t

37、han 1 across the output. 2/ Guaranteed, if not tested, to the limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

38、 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines P 2 Terminal number Terminal symbol 1 OUTPUT NC 2 NC OUTPUT 3 NC NC 4 NC NC 5 ENABLE NC 6 COMMON NC 7 NC NC 8 INPUT NC 9 - NC 10 - NC 11 - NC 12 - ENABLE 13 - NC 14 - NC 15 - COMMON 16 - NC 17 - NC 18 - NC 19 - NC 20 - INPU

39、T NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR

40、97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or functio

41、n as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and techno

42、logy conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condit

43、ion B. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with

44、the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives sha

45、ll be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the ac

46、quiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herei

47、n. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspecti

48、ons to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in m

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1