1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R041-96 96-01-30 Monica L. Poelking B Changes in accordance with NOR 5962-R116-98 98-06-12 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 00
2、-08-23 Monica L. Poelking D Correct radiation features in section 1.5 and paragraph 4.4.4.1. Update the boilerplate paragraphs to current MIL-PRF-38535 requirements. - MAA 09-04-21 Thomas M. Hess REV SHET REV D D D D D D D D SHEET 15 16 17 18 19 20 21 22 REV STATUS REV D D D D D D D D D D D D D D OF
3、 SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Thomas M. Hess
4、 AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-08-28 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, QUAD 2-INPUT NOR GATE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95679 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E255-09 Provided by IHS
5、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95679 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance
6、class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is r
7、eflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95679 01 V X C * * * * * * * * * * * * * * * * * Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)
8、 / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropri
9、ate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS02 High speed CMOS, Radiation hardened SOS, quad 2-input NOR gate 1.2.3 Device class designator. The device
10、class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Ce
11、rtification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line package X CDFP3-F14 14 Flat package 1.2.5 Lead finish. The lead finish
12、 is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95679 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHI
13、O 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (II
14、N). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline C . 24C/W Case outline X 30C/W Thermal resistance, junction-to-ambient (JA): Case outline
15、C . 74C/W Case outline X 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C . 0.66 W Case outline X 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to V
16、CCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (VIL) 30% of VCC Minimum high level input voltage (VIH). 70% of VCCCase operating temperature range (TC). -55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf) 100 ns/V 1.5 Radiation features. Total dose a
17、vailable (Dose rate = 50 300 rads(Si)/s in accordance with MIL-STD-883 method 1019, condition A ). 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4). 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010Rads (Si)/s 5/ Dose rate indu
18、ced latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are ref
19、erenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based
20、 on JA) at the following rate: Case C 13.5 mW/C Case X 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95679 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS
21、, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of
22、 these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elec
23、tronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order D
24、esk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regul
25、ations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modi
26、fication in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements f
27、or microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Ca
28、se outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figur
29、e 3. 3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95679 DEFENSE SUPPLY CENTER COLUMBU
30、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, t
31、he electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical t
32、ests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the op
33、tion of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certificat
34、ion/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of com
35、pliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6
36、.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MI
37、L-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of
38、change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the
39、 acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawin
40、g shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95679 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEE
41、T 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Min Max Unit For all inputs affecting output under test VIN= VIH= 3.15 V or VIL= 1.35 V For all other inputs VI
42、N= VCCor GND IOH= -50 A All 1, 2, 3 4.40 M, D, L, R 3/ All 4.5 V 1 4.40 For all inputs affecting output under test VIN= VIH= 3.85 V or VIL= 1.65 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, L, R 3/ All 5.5 V 1 5.40 V For all inputs affecting ou
43、tput under test VIN= VIH= 3.15 V or VIL= 1.35 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, L, R 3/ All 4.5 V 1 0.1 For all inputs affecting output under test VIN= VIH= 3.85 V or VIL= 1.65 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltag
44、e VOLM, D, L, R 3/ All 5.5 V 1 0.1 V For input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND 1 +0.5 All 2, 3 +5.0 Input current high IIHM, D, L, R 3/ All 5.5 V 1 +5.0 A For input under test, VIN= GND For all other inputs VIN= VCCor GND 1 -0.5 All 2, 3 -5.0 Input current low IILM, D, L,
45、R 3/ All 5.5 V 1 -5.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95679 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 AP
46、R 97 TABLE I. Electrical performance characteristics - Continued. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Min Max Unit For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4
47、.1 V 1 -4.8 All 2, 3 -4.0 Output current high (Source) IOHM, D, L, R 3/ All 4.5 V 1 -4.0 mA For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 0.4 V 1 4.8 All 2, 3 4.0 Output current low (Sink) IOLM, D, L, R 3/ All 4.5 V 1 4.0 mA VIN= VCCor GND
48、1 10.0 All 2, 3 200 Quiescent supply current ICCM, D, L, R 3/ All 5.5 V 1 200 A Input capacitance CINAll 5.0 V 4 10 pF VIH= 5.0 V, VIL= 0.0 V f = 1 MHz, see 4.4.1c 4 18 Power dissipation capacitance CPD4/ All 5.0 V 5, 6 26 pF VIH= 3.15 V, VIL= 1.35 V All 7, 8 L H Functional test 5/ See 4.4.1b M, D, L, R 3/ All 4.5 V 7 L H CL= 50 pF RL= 500 See figure 4 9 2.0 18.0 All 10, 11 2.0 20.0 tPHL6/ M, D, L, R 3/ All 4.5 V 9 2.0 20.0 CL= 50 pF RL= 500 See figure 4 9 2.0 20.0
