1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add paragraph 3.1.1 and add appendix A for microcircuit die. Changes in accordance with NOR 5962-R033-97. 96-11-06 R. MONNIN B Add class T requirements. Update boilerplate. Redrawn. - rrp 98-12-03 R. MONNIN C Made changes to 1.5 and added new RHA
2、 designator P in table I. - rrp 99-04-19 R. MONNIN D Make changes to IINL, IIN, VIC, VHYSTtests, footnote 5 and add new footnote under table I. - ro 00-04-21 R. MONNIN E Add device type 02. Make changes to 1.2.2, 1.4, table I, figure 1, figure 3, and appendix A. - ro 00-08-01 R. MONNIN F Add vendor
3、CAGE F8859. Updated footnote 2/ in table I to accommodate RHA designator “P”. Update boilerplate to reflect current requirements. - rrp 02-11-27 R. MONNIN G Add junction temperature (TJ) under 1.3. Clarify RHA levels under “Maximum total dose available” parameter as specified under 1.5. - ro 07-02-0
4、6 J. RODENBECK H Make change to the “DC diode input current enable pin” limit as specified under 1.3. - ro 07-04-25 R. HEBER J Add device types 03 and 04. Delete table III and device class M references. Make change to the physical die size under figure A-1. - ro 12-12-14 C. SAFFLE K Add case outline
5、 Y. Add note under figure 1. - ro 13-06-03 C. SAFFLE REV SHEET REV K K K K K K K K K SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www
6、.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RADIATION HARDNED, LINE RECEIVER, QUAD DIFFERENTIAL MONOLITHIC SILICON DRAW
7、ING APPROVAL DATE 95-11-13 AMSC N/A REVISION LEVEL K SIZE A CAGE CODE 67268 5962-95689 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E364-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95689 DLA LAND AND MARIT
8、IME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (dev
9、ice class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Qua
10、lity Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95689 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class design
11、ator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device
12、type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-26C32RH Radiation hardened quad differential line receiver 02 HS-26CLV32RH Radiation hardened quad differential line receiver 03 HS-26C32EH Radiation hardened quad differential lin
13、e receiver 04 HS-26CLV32EH Radiation hardened quad differential line receiver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-P
14、RF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package
15、 style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack Y CDFP4-F16 16 Flat pack with grounded lid 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
16、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95689 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage . -0.5 V to +7.0 V Differential input voltage 12 V Common mode range 12 V Enable pins input voltage -0.5 V to
17、 VDD+ 0.5 V DC drain current (any one output) . 25 mA DC diode input current enable pin . 20 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C: Case outline E 0.6 W Case outlines X
18、and Y 0.5 W Maximum device power dissipation (PD) 2/ 0.32 W Thermal resistance, junction-to-case (JC): Case outline E 20C/W Case outlines X and Y 26C/W Thermal resistance, junction-to-ambient (JA): Case outline E 80C/W Case outlines X and Y 103C/W 1.4 Recommended operating conditions. Operating volt
19、age range: Device type 01, 03 . +4.5 V to +5.5 V Device type 02, 04 . +3.0 V to +3.6 V Common mode range: Device type 01, 03 . 7.0 V Device type 02, 04 . -4.0 V to +7.0 V Input low voltage (VIL) . 0 V to 0.3 VDDmax Input high voltage (VIH) . VDDto 0.7 VDDmin Input rise and fall time . 500 ns max Amb
20、ient operating temperature range (TA) . -55C to +125C 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum device power dissipation is defined as VDDx ICCand must wi
21、thstand the added PDdue to output current test; IOat TA= +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95689 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 4 DSCC FORM 2234 AP
22、R 97 1.5 Radiation features Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device types 01 and 02: Device classes V or Q 300 krads(Si) 3/ Device class T 100 krads(Si) 3/ Device types 03 and 04 . 300 krads(Si) 4/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device types 03
23、and 04 . 50 krads(Si) 4/ Single event phenomena (SEP): No SEL effective at linear energy transients (LET) (see 4.4.4.5) . 100 MeV/mg/cm2 5/ Neutron irradiation test = 1 x 1014neutrons/cm25/ Dose rate induced upset = 5 x 108rads(Si)/sec 5/ Dose rate survivability = 5 x 1011rads(Si)/sec 5/ 2. APPLICAB
24、LE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT
25、 OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-10
26、3 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government
27、publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measuremen
28、t of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). _ 3/ Device types 01 and 02 may be
29、dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Device types 01 and 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(
30、Si) for device classes V or Q and 100 krads(Si) for device class T. 4/ Device types 03 and 04 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to
31、a maximum total dose of 50 krads(Si). 5/ Guaranteed by process or design, not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95689 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHE
32、ET 5 DSCC FORM 2234 APR 97 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has be
33、en obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect
34、the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein fo
35、r device classes Q, T and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation exposure circu
36、it. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specifi
37、ed herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA.
38、 The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manuf
39、acturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classe
40、s Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certifica
41、te of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of c
42、onformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95689 DLA LAND
43、 AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output 3/ voltage VOHVDD= 4.5 V,
44、 4/ VDIFF= 1.0 V, IO= -6 mA 1, 2, 3 01, 03 4.1 V VDD= 3.0 V, 4/ VDIFF= 1.0 V, IO= -6 mA 02, 04 2.55 Low level output 3/ voltage VOLVDD= 4.5 V, 4/ VDIFF= -1.0 V, IO= 6 mA 1, 2, 3 01, 03 0.4 V VDD= 3.0 V, 4/ VDIFF= -1.0 V, IO= 6 mA 02, 04 0.4 Differential input voltage VTHVDD= VIH= 4.5 V, -7.0 V VCM 7
45、.0 V 1, 2, 3 01, 03 -400 +400 mV VDD= VIH= 3.0 V, -4.0 V VCM 7.0 V 02, 04 -400 +400 Enabled high level input voltage VIHVDD= 4.5 V, 5.5 V 5/ 1, 2, 3 01, 03 0.7 VDDV VDD= 3.0 V, 3.6 V 5/ 02, 04 0.7 VDDEnabled low level input voltage VILVDD= 4.5 V, 5.5 V 5/ 1, 2, 3 01, 03 0.3 VDDV VDD= 3.0 V, 3.6 V 5/
46、 02, 04 0.3 VDDInput current high (differential inputs) IINHVDD= 5.5 V, +V = 10 V, -V = 0 V and +V = 0 V, -V = 10 V 1, 2, 3 01, 03 1.8 mA VDD= 3.6 V, +V = 10 V, -V = 0 V and +V = 0 V, -V = 10 V 02, 04 1.8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permi
47、tted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95689 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise spe
48、cified Group A subgroups Device type Limits Unit Min Max Input current low (differential inputs) IINLVDD= 5.5 V, +V = -10 V, -V = 0 V and +V = 0 V, -V = -10 V 1, 2, 3 01, 03 -2.7 mA VDD= 3.6 V, +V = -10 V, -V = 0 V and +V = 0 V, -V = -10 V 02, 04 -2.7 Input leakage current, enable pins IINVDD= 5.5 V, VIN= 0 V, 5.5 V 1, 2, 3 01, 03 -1.0 +1.0 A VDD= 3.6 V, VIN= 0 V, 3.6 V 02, 04 -1.0 +1.0 Three-state output leakage current IOZVDD= 5.5 V, VO= VDDor GND 1, 2, 3 01, 03 -5.0 5.0 A VDD= 3.6 V, VO= VDDor GND 02, 04 -5.0 5.0 Standby sup
