1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changed the maximum Operating Supply Current and Enable Supply Current parameters of Table I for radiation level. ksr. 98-10-02 Raymond Monnin B Removed references to device class M. Updated document to reflect current MIL-PRF-38535 requirements.
2、 glg 13-08-21 Charles F. Saffle REV SHEET REV B B B B B SHEET 15 16 17 18 19 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-
3、3990 http:/www.landandmaritime.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOS, RADIATION HARDENED, 64K X 1 STATIC RAM, MONOLITHIC SILICON DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 97-10-20 AMSC N/A
4、 REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95822 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E476-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVIS
5、ION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or I
6、dentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95822 01 Q X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1
7、.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type
8、(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 65643ARH 64K X 1 Radiation hardened CMOS/SOS SRAM 50 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance leve
9、l as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 24 Flat pack
10、1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. 1.3 Absolute maximum ratings. 2/ Supply voltage range . -0.5 V to +7.0 V dc Input, output, or I/O voltage . -0.3 V dc to VDD+0.3 V dc Maximum package power dissipation (PD) at TA= +125C 0.78 W 3/ Lead tem
11、perature (soldering, 10 seconds maximum) +300C Thermal resistance, junction-to-case (JC): 8.8C/W Thermal resistance, junction-to-ambient (JA): . 64.0C/W Junction temperature (TJ) +175C Storage temperature range -65C to +150C 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source A
12、pproval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103 (see 6.6 herein). 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ If
13、device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA)at the following rate: case outline X - - - 15.6 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA
14、WING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Supply voltage (VDD) +4.5 V dc to +5.5 V dc Ground voltage (GND) . 0.0 V dc Input high voltage (VIH) 0.8VDDto VDDInput Low voltage (VIL) . 0.0 V
15、 dc to 0.2VDDCase operating temperature range (TC) . -55C to +125C Data retention supply voltage 2.0 V dc minimum Input rise and fall time 5 ns maximum 1.5 Radiation features. Radiation features: Total dose irradiation . 300 KRads(Si) Dose rate upset (20 ns pulse) 1 x 1011Rads(Si)/sec 4/ Dose rate s
16、urvivability . 1 x 1012Rads(Si)/sec 4/ Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 100 MeV/(cm2/mg) 4/ Latchup None 4/ Cosmic ray upset immunity . 50 pF. For CL 50 pF, access times are derated 0.15ns/pF. 8/ Limits at +85C and +125C. Provided by IHSNot for Res
17、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 10 DSCC FORM 2234 APR 97 Case Y FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or netwo
18、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 11 DSCC FORM 2234 APR 97 Symbol Millimeters Inches Symbol Millimeters Inches Min Max Min Max Max Min Min Max A 1.78 2.92 .070 .115 E2 9.
19、40 9.91 .370 .390 B 0.38 0.56 .015 .022 E3 0.76 - .030 - b1 0.38 0.48 .015 .019 e 1.27 BSC .050 BSC c 0.10 0.23 .004 .009 L 8.38 8.89 .330 .350 c1 0.10 0.15 .004 .006 M - 0.04 - .0015 D 14.99 15.49 .590 .610 Q 0.66 1.14 .026 .045 E 12.45 12.95 .490 0510 S1 0.13 - .005 - E1 - 13.20 - .520 N 24 NOTES:
20、 1. Although dimensions are in inches, the US government preferred system of measurement is the SI metric system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the two, the inch-pound units shall take precedence. Metric equiv
21、alents are for general information only. 2. Dimensions D and E1 allow for off-center lid, meniscus, and glass overrun. 3. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. The minimum shall be reduced by 0.038 mm (0.0015 inch) maximum when solder dip
22、 lead finish is applied. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is ap
23、plied. 5. Measure dimension S1 at all four corners. 6. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom or the package to cover the leads. FIGURE 1. Case outline - continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without
24、license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 12 DSCC FORM 2234 APR 97 Device types All Case outlines X,Y Terminal number Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A0A1A
25、2A3A4A5A6A7NC Q W GND E D A8A9A10A11A12A13A14A15NC VDDFIGURE 2. Terminal connections. Read modes Mode E W Outputs Power Not selected H X High Z Standby Read L H Data out Active Write L L High Z Active NOTES: 1. L = logic low voltage level; H = logic high voltage level; X can be H or L. 2. High Z is
26、high impedance state. FIGURE 3. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 13 DSCC FORM 2234 APR 97 Read cycle (s
27、ee note) NOTE: W is high for the entire cycle and D is ignored E is stable prior to A becoming valid and after A becomes invalid. FIGURE 4. Timing waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95
28、822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 14 DSCC FORM 2234 APR 97 Write cycle 1: W controlled (see note) NOTE: In this mode E rises after W. The address must remain stable whenever both E and W are low. FIGURE 4. Timing waveforms continued. Provided by IHSNot for Re
29、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 15 DSCC FORM 2234 APR 97 Write cycle 2: E controlled FIGURE 4. Timing waveforms continued. Provided by IHSNo
30、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 16 DSCC FORM 2234 APR 97 4.4.3 Group D inspection. The group D inspection end-point electrical param
31、eters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V,
32、the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA= +25C 5C, after exposure, to the subgrou
33、ps specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A and as specified herein. 4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all dev
34、ices requiring a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at initial qualification and after any design
35、 or process changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.5). Tests shall be performed on devices, SEC, or appr
36、oved test structures at technology qualification and after any design or process changes which may affect the RHA capability of the process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with method 1021 of MIL-STD-883 and herein (see 1.5). a. Transient do
37、se rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be performed
38、as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. 4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.5 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SE
39、P test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. ASTM standard F1192 may be used as a guideline when performing SEP testing. The test conditions for SEP are as follows: a. The
40、 ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60). No shadowing of the ion beam due to fixturing or package related effects are allowed. b. The fluence shall be 100 errors or 106ions/cm2. c. The flux shall be between 102and 105i
41、ons/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be 20 microns in silicon. e. The test temperature shall be +25 C and the maximum rated operating temperat
42、ure 10 C. f. Bias conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95822 DLA LAND AND MARITIME
43、 COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 17 DSCC FORM 2234 APR 97 TABLE IIA. Electrical test requirements. 1/ 2/ 3/ 4/ 5/ 6/ 7/ Line no. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q Device class V 1 Interim electrical parameters (see 4.2) 1, 7, 9
44、1, 7, 9 2 Static burn-in (method 1015) Not required Required 3 Same as line 1 1*, 7*, 9 4 Dynamic burn-in (method 1015) Required Required 5 Same as line 1 1*, 7*, 9 6 Final electrical parameters (see 4.2) 1*, 2, 3, 7*, 8A, 8B, 9, 10, 11 8/ 1*, 2, 3, 7*, 8A, 8B, 9, 10, 11 8/ 7 Group A test requiremen
45、ts (see 4.4) 1, 2, 3, 4*, 7, 8A, 8B, 9, 10, 11 8/ 1, 2, 3, 4*, 7, 8A, 8B, 9, 10, 11 8/ 8 Group C end-point electrical parameters (see 4.4) 1, 2, 3, 7, 8A, 8B 8/ 1, 2, 3, 7, 8A, 8B, 9, 10, 11 8/ 9 Group D end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 10 Group E end-point electrical parame
46、ters (see 4.4) 1, 7, 9 1, 7, 9 1/ Blank spaces indicate tests are not applicable. 2/ Any or all subgroups may be combined when using high-speed testers. 3/ Subgroups 7, 8A, and 8B functional tests shall verify the truth table. 4/ * indicates PDA applies to subgroup 1, 7, and 9. 5/ * see 4.4.1c. 6/ i
47、ndicates delta limit (see table IIB) shall be required where specified, and the delta values shall be computed with reference to the previous interim electrical parameters (see line 1). 7/ See 4.5. 8/ In addition, testing is performed at +85C. Table IIB. Delta limits at +25C. Test 1/ All device type
48、s IIN150 nA of specified value in Table I IOZ2 A of specified value in Table I IDDSB150 A of specified value in Table I VOL60 mV of specified value in Table I VOH1400 mV of specified value in Table I 1/ The above parameter shall be recorded before and after the required burn-in and life tests to determine the delta. Prov
