DLA SMD-5962-96843 REV D-2008 MICROCIRCUIT LINEAR VOLTAGE REFERENCE DIODE 1 2 VOLTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Under Table IIA, delete footnote 2/ from final electrical parameters of device class V. Under the footnote 2/ description of Table IIA, delete the word “interim” and substitute the word “endpoint”. Changes in accordance with N.O.R. 5962-R040-97.

2、96-11-04 R. MONNIN B Make changes to the symbol “L” dimensions under case outline X. Changes in accordance with N.O.R. 5962-R018-99. 99-01-15 R. MONNIN C Add case outline Z. Make editorial changes throughout. Redrawn. - ro 00-04-14 R. MONNIN D Replace reference to MIL-STD-973 with reference to MIL-P

3、RF-38535. - ro 08-06-03 R. HEBER REV SHET REV SHET REV STATUS REV D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THI

4、S DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-04-10 MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96843 SHEET 1 OF 1

5、0 DSCC FORM 2233 APR 97 5962-E260-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1

6、Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choi

7、ce of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 96843 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.

8、5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked w

9、ith the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM113 Voltage reference diode 02 LM113-1 Voltage reference diode 03 LM113-2 Voltage reference d

10、iode 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in acco

11、rdance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 2 TO-46 can Z GDFP1-G10 10 Flat pack

12、 with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

13、 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Reverse current 50 mA Forward current . 50 mA Maximum power dissipation (PD): Cases X and Z . 100 mW 2/ Storage temperature range (TSTG) . -65C to +150

14、C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC): Case X . 80C/W Case Z . 27C/W Thermal resistance, junction-to-ambient (JA): Case X . 440C/W Case Z . 218C/W 1.4 Recommended operating conditions. Ambient operating temperatur

15、e (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the so

16、licitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMEN

17、T OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Phi

18、ladelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has be

19、en obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Rating applies at 25C ambient without heat sink. For operating at elevated temperature the device must be

20、 derated based on a 150C maximum junction and a thermal resistance of 80C/W for case X and 27C/W for case Z junction to case or 440C/W for case X and 218C/W for case Z junction to ambient. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICR

21、OCIRCUIT DRAWING SIZE A 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified her

22、ein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class le

23、vel B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. Th

24、e case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Case outline dimensions and terminal connections. The case outline dimensions and terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise

25、specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tabl

26、e IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the

27、manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appen

28、dix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and

29、V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply

30、 in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M,

31、 the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawin

32、g. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSC

33、C, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices

34、 covered by this drawing shall be in microcircuit group number 59 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-399

35、0 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Zener voltage VZRIR= 1 mA 1 01 1.16 1.28 V 2,3 1.157 1.283 1 02 1.210 1.232 2,3 1.206

36、 1.234 1 03 1.195 1.245 2,3 1.194 1.246 Delta zener voltage VZR0.5 mA IR 20 mA 1 All 15 mV 0.5 mA IR 10 mA 2,3 15 Forward voltage drop VFIF= 1 mA 1,2,3 All 1 V Reverse dynamic impedance RRIR= 1 mA 2/ 4 All 1 IR= 10 mA 2/ 0.8 1/ At high currents, breakdown voltage should be measured with lead lengths

37、 less than 0.25 inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitance between 200 pF and 0.1 F, unless isolated by at least a 100 resistor, as it may oscillate at some currents. 2/ If not tested, shall be guaranteed to the limits specified in tabl

38、e I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 Case X Symbol Dimensions Notes Inches

39、Millimeters Min Max Min Max A .080 .105 2.03 2.67 b .016 .019 0.41 0.48 D .209 .219 5.31 5.56 D1 .178 .195 4.52 4.95 e .100 BSC 2.54 BSC e1 .050 BSC 1.27 BSC F - .030 - 0.76 k .036 .046 0.91 1.17 k1 .028 .048 0.28 1.22 L .500 - 12.70 - Q - .025 - 0.64 45 BSC 45 BSC 2 NOTES: 1. The U.S. government pr

40、eferred system of measurement is the metric SI system. However, this item was originally designated using inch-pound units of measurement. In the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 2. is the basis spacing from the centerline of the

41、tab to terminal 1. FIGURE 1. Case outline dimensions and terminal connections.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SH

42、EET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline Z Terminal number Terminal number 1 NC 2 NC 3 NC 4 NC 5 -V 6 NC 7 NC 8 NC 9 NC 10 +V FIGURE 1. Case outline dimensions and terminal connections Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

43、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96843 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL

44、-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Scree

45、ning. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on a

46、ll devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available

47、to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified

48、 in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The

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