DLA SMD-5962-98601 REV A-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT NOR GATE MONOLITHIC SILICON《微型电路 数字型 辐射加固改进的CMOS 四路双输入或门 单块硅》.pdf

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1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)99- 04-21Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching ex

2、isting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Wash

3、ington Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO E

4、ITHER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad

5、 StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R 053-99a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-986019. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NOR GATE, MONOLITHIC SILICON10. REVISION LETTER11. ECP

6、NO.No users listed.a. CURRENTInitialb. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1 : Revisions ltr column; add “A“.Revisions description column; add “ Changes in accordance with NOR 5962-R053-99“.Revisions date column ; add “99-04-21“.Revision lev

7、el block ; add “A”.Rev status of sheets ; for sheet 1 and 4, 16 through 22, add “A“.Sheet 4 : Add new paragraph which states; “3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “A“.Sheets 16 through 22: Add attached appendix

8、 A.CONTINUED ON NEXT SHEETS14. THIS SECTION FO R GOVERNMENT USE ONLYa. (X one) X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision a

9、nd furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC -VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)99- 04-2115a. ACTIVITY ACCOMPLISHING REVISIONDSCC -VA

10、Cb. REVISION COMPLETED (Signature)LARRY T. GAUDERc. DATE SIGNED(YYMMDD)99- 04-21DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER COLU

11、MBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 16DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 2 of 8 10. SCOPE10.1 Scope . This appendix establishes minimum requirements for microcircuit die to be suppli

12、ed under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire designs in accordance

13、 with MIL-PRF-38534 are specified herein. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are re

14、flected in the PIN.10.2 PIN . The PIN shall be as shown in the following example:5962 F 98601 01 V 9 AFederal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)( see 10.2.3) Drawing Number 10.2.1 RHA designator . Device

15、 classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s) . The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 ACS02 Radiation hardened, SOS,advanced CMOS

16、, quad 2-input NORgate.10.2.3 Device class designator .Device class Device requirements documentationQ or V Certification and qualification to th e die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT

17、 DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 17DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 3 of 8 10.2.4 Die Details . The die details designation sha

18、ll be a unique letter which designates the dies physical dimensions, bondingpad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product andvariant supplied to this appendix.10.2.4.1 Die Physical dimensions .Die Types Figure number

19、01 A-110.2.4.2 Die Bonding pad locations and Electrical functions .Di e Types Figure number01 A-110.2.4.3 Interface Materials .Die Types Figure number01 A-110.2.4.4 Assembly related information .Die Types Figure number01 A-110.3 Absolute maximum ratings . See paragraph 1.3 within the body of this dr

20、awing for details.10.4 Recommended operating conditions . See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks . Unless otherwise specified, the following specifications,standards, bulletin, and handb

21、ook of the issue listed in that issue of the Department of Defense Index of Specifications andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

22、MICROCIRCUIT DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 18DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PR

23、F-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.(Copies of the specification, standards, bulletin, and handbook re

24、quired by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the text ofthi

25、s drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements . The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM pla

26、n shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions . The design, construction and physical dimensions shall be as specified inMIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensi

27、ons . The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions . The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials . The interface mater

28、ials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information . The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table . The truth table shall be as defined within paragraph 3.2.3 of the body of this document.30

29、.2.6 Radiation exposure circuit . The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of thisdocument.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER

30、COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 19DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irradiation parameter limits . Unless otherw

31、ise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document.30.4 Electrical test requirements . The wafer probe test requirements shall include functional and parametric testing sufficient tomake the p

32、ackaged die capable of meeting the electrical performance requirements in table I.30.5 Marking . As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,shall be identified with the wafer lot number, the certification mark, the manufacturers i

33、dentification and the PIN listed in 10.2herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance . For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the requi

34、rements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.

35、30.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shallbe provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection . For device classes Q and V, die sampling

36、and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QMplan shall not effect the form, fit or function as described herein.40.2 Screening . For device classes Q and V, screening shall be i

37、n accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicabl

38、e class Q or V criteria defined within MIL-STD-883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS,

39、 OHIO 43216-5000 REVISION LEVEL A SHEET 20DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 6 of 8 40.3 Conformance inspection .40.3.1 Group E inspection . Group E inspection is required only for parts intended to

40、be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,4.4.4.1.1,

41、 4.4.4.2, 4.4.4.3, and 4.4.4.4.50. DIE CARRIER50.1 Die carrier requirements . The requirements for the die carrier shall be in accordance with the manufacturers QM plan oras specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical andelec

42、trostatic protection.60. NOTES60.1 Intended use . Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logisticspurposes.60.2 Com

43、ments . Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions . The abbreviations, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-HDBK-1331.60.4 Sources of Supply for devi

44、ce classes Q and V . Sources of supply for device classes Q and V are listed in QML-38535.The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreedto this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted wi

45、thout license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 21DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 7 of 8 FIGUR

46、E A -1o DIE PHYSICAL DIMENSIONSDie Size: 2390 x 2390 microns.Die Thickness: 21 +/- 2 mils. DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSThe following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal metallizationlayout and alphanumeric info

47、rmation contained within this diagram may or may not represent the actual circuit defined by this SMD.NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines C, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

48、MICROCIRCUIT DRAWINGSIZEA 5962-98601DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 22DSCC FORM 2234APR 97Document No : 5962-98601Revision: AAPPENDIX A NOR No : 5962-R053-99APPENDIX A FORMS A PART OF SMD 5962-98601 Sheet: 8 of 8 o INTERFACE MATERIALSDevice 01Metal 1: A

49、lSi 7.0kA +/- 1.0kAMetal 2 (Top): AlSi 10.0kA +/- 1.0kABackside Metallization NoneDevice 01GlassivationType: PSGThickness 13.0kA +/ - 1.5kASubstrate: Sil icon on Sapphire (SOS)o ASSEMBLY RELATED INFORMATIONSubstrate Potential: InsulatorSpecial assemblyinstructions: Bond pad #14 (VCC) first.Provided by IHSNot

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