1、 IEC 60749-5 Edition 2.0 2017-04 INTERNATIONAL STANDARD Semiconductor devices Mechanical and climatic test methods Part 5: Steady-state temperature humidity bias life test IEC 60749-5:2017-04(en) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2017 IEC, Geneva, Switzerland All rights reserved. Unl
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10、e.iec.ch/csc If you wish to give us your feedback on this publication or need further assistance, please contact the Customer Service Centre: csciec.ch. IEC 60749-5 Edition 2.0 2017-04 INTERNATIONAL STANDARD Semiconductor devices Mechanical and climatic test methods Part 5: Steady-state temperature
11、humidity bias life test INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 31.080.01 ISBN 978-2-8322-4171-4 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. 2 IEC 60749-5:2017 IEC 2017 CONTENTS FORE
12、WORD . 3 1 Scope 5 2 Normative references 5 3 Terms and definitions 5 4 General . 5 5 Equipment . 6 5.1 Equipment summary . 6 5.2 Temperature and relative humidity 6 5.3 Devices under stress 6 5.4 Minimizing release of contamination . 6 5.5 Ionic contamination . 6 5.6 Deionized water 6 6 Test condit
13、ions 6 6.1 Test conditions summary 6 6.2 Temperature, relative humidity and duration . 6 6.3 Biasing guidelines . 7 6.4 Biasing choice and reporting . 7 7 Procedures 8 7.1 Mounting . 8 7.2 Ramp-up . 8 7.3 Ramp-down 8 7.4 Test clock . 8 7.5 Bias 8 7.6 Read-out . 8 7.7 Handling . 9 8 Failure criteria
14、. 9 9 Safety 9 10 Summary . 9 Table 1 Temperature, relative humidity and duration 6 Table 2 Criteria for choosing continuous or cyclical bias 8 IEC 60749-5:2017 IEC 2017 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 5: Steady-state temp
15、erature humidity bias life test FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions c
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25、ttention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60749-5 has been prepared by IEC technical committee 47: Semiconduct
26、or devices. This second edition cancels and replaces the first edition published in 2003. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) correction of an error in an equation; b) inclusion of n
27、otes for guidance; c) clarification of the applicability of test conditions. 4 IEC 60749-5:2017 IEC 2017 The text of this International Standard is based on the following documents: FDIS Report on voting 47/2367/FDIS 47/2383/RVD Full information on the voting for the approval of this International S
28、tandard can be found in the report on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 60749 series, published under the general title Semiconductor devices Mechanical and climatic test methods, can
29、be found on the IEC website. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be reconfirmed, withdrawn,
30、 replaced by a revised edition, or amended. A bilingual version of this publication may be issued at a later date. IEC 60749-5:2017 IEC 2017 5 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 5: Steady-state temperature humidity bias life test 1 Scope This part of IEC 60749 provides a
31、 steady-state temperature and humidity bias life test for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments. This test method is considered destructive. 2 Normative references The following documents are referred to in the text in such a way
32、 that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60749-4, Semiconductor devices Mechanical and climatic tes
33、t methods Part 4: Damp heat, steady-state, highly accelerated stress test (HAST) 3 Terms and definitions No terms and definitions are listed in this document. ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/www
34、.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 4 General This test employs conditions of temperature, humidity and bias which accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the
35、external protective material and the metallic conductors which pass through it. Where both this steady-state, humidity bias test and the damp heat, highly accelerated stress test (HAST) of IEC 60749-4 are performed, the results of this 85 C/85 % RH steady-state test will take priority over the resul
36、ts of the HAST test, which is an accelerated test designed to activate the same failure mechanisms. 6 IEC 60749-5:2017 IEC 2017 5 Equipment 5.1 Equipment summary The test requires a temperature-humidity test chamber capable of maintaining a specified temperature and relative humidity continuously, w
37、hile providing electrical connections to the devices under test in a specified biasing configuration. 5.2 Temperature and relative humidity The chamber shall be capable of providing controlled conditions of temperature and relative humidity during ramp-up to, and ramp-down from the specified test co
38、nditions. Care should be taken to ensure that the test chamber dry bulb temperature exceeds the wet bulb temperature at all times. 5.3 Devices under stress Devices under stress shall be physically located to minimize temperature gradients. 5.4 Minimizing release of contamination Care shall be exerci
39、sed in the choice of board and socket materials, to minimize release of contamination, and to minimize degradation due to corrosion and other mechanisms. 5.5 Ionic contamination The test apparatus (card cage, test boards, sockets, wiring, storage containers, etc.) shall be controlled to avoid ionic
40、contamination of the test devices. 5.6 Deionized water Deionized water with a minimum resistivity of 1 10 4 m at room temperature shall be used. 6 Test conditions 6.1 Test conditions summary Test conditions consist of a temperature, relative humidity, and duration used in conjunction with an electri
41、cal bias configuration specific to the device. 6.2 Temperature, relative humidity and duration Unless otherwise required by the detail specification, the temperature, relative humidity and test duration as shown in Table 1 shall be applied. Table 1 Temperature, relative humidity and duration Tempera
42、ture (dry bulb) C Relative humidity a% Temperature b(wet bulb) C Vapour pressure b kPa Duration c h 85 2 85 5 81,0 49,1 1 000 24 168 +aTolerances apply to the entire useable test area. bFor information only. cThe test conditions are to be applied continuously, except during any interim readouts, whe
43、n the devices should be returned to stress within the time specified in 7.6. IEC 60749-5:2017 IEC 2017 7 6.3 Biasing guidelines Apply bias according to the following guidelines: a) Minimize power dissipation. b) Alternate pin bias as much as possible. c) Distribute potential differences across chip
44、metallization as much as possible. d) Maximize voltage within operating range. NOTE The priority of the above guidelines depends on the mechanism and specific device characteristics. e) Either of two kinds of bias can be used to satisfy these guidelines, whichever is more severe: 1) Continuous bias
45、The DC bias shall be applied continuously. Continuous bias is more severe than cycled bias when the virtual junction temperature is 10 C higher than the chamber ambient temperature or, if the virtual junction temperature is not known when the heat dissipation of the device under test (DUT) is less t
46、han 200 mW. If the heat dissipation of the DUT exceeds 200 mW, then the virtual junction temperature should be calculated. If the virtual junction temperature 1exceeds the chamber ambient temperature by more than 5 C then the virtual junction temperature rise above the chamber ambient should be incl
47、uded in reports of test results since acceleration of failure mechanisms will be affected. NOTE 2 Based on the power dissipation and the thermal resistance or impedance that corresponds to the mode of operation, the virtual junction temperature can be calculated from the formula T j= T case+ (P x R
48、th ) or T j= T amb+ (P x R th ) where T j is the virtual junction temperature; P is the power dissipation; R this the thermal resistance. 2) Cycled bias The DC voltage applied to the devices under test shall be periodically interrupted with an appropriate frequency and duty cycle. If the biasing con
49、figuration results in a temperature rise above the chamber ambient, T ja , exceeding 10 C, then cycled bias, when optimized for a specific device type, will be more severe than continuous bias. Heating as a result of power dissipation tends to drive moisture away from the die and thereby hinders moisture-related failure mechanisms. Cycled bias permits moisture collection on the die during the off periods when device power dissipation does not occur. Cycling the DUT bias with
