1、 IEC 61000-4-6 Edition 4.0 2013-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Electromagnetic compatibility (EMC) Part 4-6: Testing and measurement techniques Immunity to conducted disturbances, induced by radio-frequency fields Compatibilit lectromagntique (CEM) Partie 4-6: Techniques dessai et de
2、 mesure Immunit aux perturbations conduites, induites par les champs radiolectriques IEC61000-4-6:2013BASIC EMC PUBLICATION PUBLICATION FONDAMENTALE EN CEM colourinsideTHIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2013 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no
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16、rez nous donner des commentaires sur cette publication ou si vous avez des questions contactez-nous: csciec.ch. IEC 61000-4-6 Edition 4.0 2013-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Electromagnetic compatibility (EMC) Part 4-6: Testing and measurement techniques Immunity to conducted disturb
17、ances, induced by radio-frequency fields Compatibilit lectromagntique (CEM) Partie 4-6: Techniques dessai et de mesure Immunit aux perturbations conduites, induites par les champs radiolectriques INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE XC ICS 33.100.20 PR
18、ICE CODE CODE PRIX ISBN 978-2-8322-1176-2 BASIC EMC PUBLICATION PUBLICATION FONDAMENTALE EN CEM Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized
19、 distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colourinside 2 61000-4-6 IEC:2013 CONTENTS FOREWORD . 5 INTRODUCTION . 7 1 Scope 8 2 Normative references 8 3 Terms and definitions 8 4 General . 10 5 Test levels . 12 6 Test equipment and
20、level adjustment procedures 13 Test generator . 13 6.1Coupling and decoupling devices . 15 6.2General 15 6.2.1Coupling/decoupling networks (CDNs) 18 6.2.2Clamp injection devices 20 6.2.3Direct injection devices . 22 6.2.4Decoupling networks 22 6.2.5Verification of the common mode impedance at the EU
21、T port of coupling 6.3and decoupling devices 23 General 23 6.3.1Insertion loss of the 150 to 50 adapters . 23 6.3.2Setting of the test generator . 25 6.4General 25 6.4.1Setting of the output level at the EUT port of the coupling 6.4.2device . 26 7 Test setup and injection methods 28 Test setup 28 7.
22、1EUT comprising a single unit 28 7.2EUT comprising several units . 29 7.3Rules for selecting injection methods and test points . 30 7.4General 30 7.4.1Injection method . 30 7.4.2Ports to be tested . 31 7.4.3CDN injection application . 32 7.5Clamp injection application when the common mode impedance
23、7.6requirements can be met 33 Clamp injection application when the common mode impedance 7.7requirements cannot be met . 35 Direct injection application . 35 7.88 Test procedure 36 9 Evaluation of the test results . 37 10 Test report . 37 Annex A (normative) EM and decoupling clamps 39 Annex B (info
24、rmative) Selection criteria for the frequency range of application 49 Annex C (informative) Guide for selecting test levels . 51 Annex D (informative) Information on coupling and decoupling networks . 52 Annex E (informative) Information for the test generator specification 57 Annex F (informative)
25、Test setup for large EUTs 58 61000-4-6 IEC:2013 3 Annex G (informative) Measurement uncertainty of the voltage test level . 61 Annex H (informative) Measurement of AE impedance . 72 Annex I (informative) Port to port injection . 76 Annex J (informative) Amplifier compression and non-linearity . 78 B
26、ibliography 83 Figure 1 Immunity test to RF conducted disturbances 12 Figure 2 Open circuit waveforms at the EUT port of a coupling device for test level 1 . 13 Figure 3 Test generator setup 15 Figure 4 Principle of coupling and decoupling 18 Figure 5 Principle of coupling and decoupling according t
27、o the clamp injection method . 20 Figure 6 Example of circuit for level setting setup in a 150 test jig 21 Figure 7 Example circuit for evaluating the performance of the current clamp 22 Figure 8 Details of setups and components to verify the essential characteristics of coupling and decoupling devi
28、ces and the 150 to 50 adapters . 25 Figure 9 Setup for level setting 27 Figure 10 Example of test setup with a single unit EUT (top view) 29 Figure 11 Example of a test setup with a multi-unit EUT (top view) 30 Figure 12 Rules for selecting the injection method . 31 Figure 13 Immunity test to 2-port
29、 EUT (when only one CDN can be used) 33 Figure 14 General principle of a test setup using clamp injection devices 34 Figure 15 Example of the test unit locations on the ground plane when using injection clamps (top view) 35 Figure A.1 Example: Construction details of the EM clamp . 40 Figure A.2 Exa
30、mple: Concept of the EM clamp 41 Figure A.3 Dimension of a reference plane 42 Figure A.4 Test jig . 42 Figure A.5 Test jig with inserted clamp . 42 Figure A.6 Impedance / decoupling factor measurement setup . 43 Figure A.7 Typical examples for clamp impedance, 3 typical clamps 44 Figure A.8 Typical
31、examples for decoupling factors, 3 typical clamps . 45 Figure A.9 Normalization setup for coupling factor measurement . 45 Figure A.10 S21coupling factor measurement setup 46 Figure A.11 Typical examples for coupling factor, 3 typical clamps 46 Figure A.12 Decoupling clamp characterization measureme
32、nt setup . 47 Figure A.13 Typical examples for the decoupling clamp impedance . 47 Figure A.14 Typical examples for decoupling factors 48 Figure B.1 Start frequency as function of cable length and equipment size 50 Figure D.1 Example of a simplified diagram for the circuit of CDN-S1 used with screen
33、ed cables (see 6.2.2.5) . 53 Figure D.2 Example of simplified diagram for the circuit of CDN-M1/-M2/-M3 used with unscreened supply (mains) lines (see 6.2.2.2) . 53 Figure D.3 Example of a simplified diagram for the circuit of CDN-AF2 used with unscreened unbalanced lines (see 6.2.2.4) . 54 4 61000-
34、4-6 IEC:2013 Figure D.4 Example of a simplified diagram for the circuit of a CDN-T2, used with an unscreened balanced pair (see 6.2.2.3) 54 Figure D.5 Example of a simplified diagram of the circuit of a CDN-T4 used with unscreened balanced pairs (see 6.2.2.3) 55 Figure D.6 Example of a simplified di
35、agram of the circuit of a CDN AF8 used with unscreened unbalanced lines (see 6.2.2.4) . 55 Figure D.7 Example of a simplified diagram of the circuit of a CDN-T8 used with unscreened balanced pairs (see 6.2.2.3) 56 Figure F.1 Example of large EUT test setup with elevated horizontal reference ground p
36、lane . 59 Figure F.2 Example of large EUT test setup with vertical reference ground plane . 60 Figure G.1 Example of influences upon voltage test level using CDN . 62 Figure G.2 Example of influences upon voltage test level using EM clamp . 62 Figure G.3 Example of influences upon voltage test level
37、 using current clamp . 63 Figure G.4 Example of influences upon voltage test level using direct injection 63 Figure G.5 Circuit for level setting setup 64 Figure H.1 Impedance measurement using a voltmeter 73 Figure H.2 Impedance measurement using a current probe 74 Figure I.1 Example of setup, port
38、-port injection 77 Figure J.1 Amplifier linearity measurement setup . 80 Figure J.2 Linearity characteristic 81 Figure J.3 Measurement setup for modulation depth 81 Figure J.4 Spectrum of AM modulated signal . 82 Table 1 Test levels . 13 Table 2 Characteristics of the test generator 14 Table 3 Main
39、parameter of the combination of the coupling and decoupling device . 15 Table 4 Usage of CDNs . 18 Table B.1 Main parameter of the combination of the coupling and decoupling device when the frequency range of test is extended above 80 MHz 49 Table E.1 Required power amplifier output power to obtain
40、a test level of 10 V 57 Table G.1 CDN level setting process 65 Table G.2 CDN test process 65 Table G.3 EM clamp level setting process 67 Table G.4 EM clamp test process . 67 Table G.5 Current clamp level setting process . 68 Table G.6 Current clamp test process 69 Table G.7 Direct injection level se
41、tting process 70 Table G.8 Direct injection test process . 70 Table H.1 Impedance requirements for the AE . 72 Table H.2 Derived voltage division ratios for AE impedance measurements . 73 Table H.3 Derived voltage ratios for AE impedance measurements 74 61000-4-6 IEC:2013 5 INTERNATIONAL ELECTROTECH
42、NICAL COMMISSION _ ELECTROMAGNETIC COMPATIBILITY (EMC) Part 4-6: Testing and measurement techniques Immunity to conducted disturbances, induced by radio-frequency fields FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all nat
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