1、BSI Standards Publication Integrated circuits Measurement of electromagnetic immunity Part 9: Measurement of radiated immunity Surface scan method PD IEC/TS 62132-9:2014National foreword This Published Document is the UK implementation of IEC/TS 62132-9:2014. The UK participation in its preparation
2、was entrusted to Technical Committee EPL/47, Semiconductors. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application.
3、The British Standards Institution 2014. Published by BSI Standards Limited 2014 ISBN 978 0 580 79947 1 ICS 31.200 Compliance with a British Standard cannot confer immunity from legal obligations. This Published Document was published under the authority of the Standards Policy and Strategy Committee
4、 on 30 September 2014. Amendments/corrigenda issued since publication Date Text affected PUBLISHED DOCUMENT PD IEC/TS 62132-9:2014 IEC TS 62132-9 Edition 1.0 2014-08 TECHNICAL SPECIFICATION SPECIFICATION TECHNIQUE Integrated circuits Measurement of electromagnetic immunity Part 9: Measurement of rad
5、iated immunity Surface scan method Circuits intgrs Mesure de limmunit lectromagntique Partie 9: Mesure de limmunit rayonne Mthode de balayage en surface INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE U ICS 31.200 PRICE CODE CODE PRIX ISBN 978-2-8322-1808-2 Regis
6、tered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distribu
7、teur agr. colour inside PD IEC/TS 62132-9:2014 2 IEC TS 62132-9:2014 IEC 2014 CONTENTS FOREWORD . 4 INTRODUCTION . 6 1 Scope 7 2 Normative references. 7 3 Terms, definitions and abbreviations 7 3.1 Terms and definitions 7 3.2 Abbreviations 8 4 General . 8 5 Test Conditions . 9 5.1 General . 9 5.2 Su
8、pply voltage 9 5.3 Frequency range . 9 6 Test equipment 9 6.1 General . 9 6.2 Shielding . 9 6.3 RF disturbance generator 9 6.4 Cables 9 6.5 Near-field probe 10 6.5.1 General . 10 6.5.2 Magnetic (H) field probe . 10 6.5.3 Electric (E) field probe 10 6.6 Probe-positioning and data acquisition system .
9、 10 6.7 DUT monitor . 11 7 Test setup . 11 7.1 General . 11 7.2 Test configuration . 11 7.3 Test circuit board 12 7.4 Probe-positioning system software setup . 12 7.5 DUT Software . 12 8 Test procedure 12 8.1 General . 12 8.2 Operational check . 13 8.3 Immunity test 13 8.3.1 General . 13 8.3.2 Ampli
10、tude modulation . 13 8.3.3 Test frequency steps and ranges 13 8.3.4 Test levels and dwell time 13 8.3.5 DUT monitoring 14 8.3.6 Detailed procedure . 14 9 Test report. 15 9.1 General . 15 9.2 Test conditions 15 9.3 Probe design and calibration . 15 9.4 Test data 15 9.5 Post-processing 16 9.6 Data exc
11、hange 16 PD IEC/TS 62132-9:2014IEC TS 62132-9:2014 IEC 2014 3 Annex A (informative) Calibration of near-field probes 17 A.1 General . 17 A.2 Test equipment . 20 A.3 Calibration setup . 20 A.4 Calibration procedure 20 Annex B (informative) Electric and magnetic field probes . 22 B.1 General . 22 B.2
12、Probe electrical description . 22 B.3 Probe physical description . 22 B.3.1 Probe construction . 22 B.3.2 Electric field probe . 23 B.3.3 Magnetic field probe . 23 Annex C (informative) Coordinate systems . 24 C.1 General . 24 C.2 Cartesian coordinate system . 24 C.3 Cylindrical coordinate system 25
13、 C.4 Spherical coordinate system 26 C.5 Coordinate system conversion . 26 Bibliography . 27 Figure 1 Example of a probe-positioning system . 11 Figure 2 Test setup 12 Figure 3 Example of data overlaid on an image of the DUT . 16 Figure A.1 Typical probe factor in dB ( .m 2 ) against frequency 19 Fig
14、ure A.2 Typical probe factor in dB (S/m 2 ) against frequency . 19 Figure A.3 Probe calibration setup 20 Figure B.1 Basic structure of electric and magnetic field probe schematics 22 Figure B.2 Example of electric field probe construction (E Z ) 23 Figure B.3 Example of magnetic field probe construc
15、tion (H Xor H Y ) . 23 Figure C.1 Right-hand Cartesian coordinate system (preferred) 24 Figure C.2 Left-hand Cartesian coordinate system 25 Figure C.3 Cylindrical coordinate system 25 Figure C.4 Spherical coordinate system 26 Table 1 Frequency step size versus frequency range 13 Table A.1 Probe fact
16、or linear units . 18 Table A.2 Probe factor logarithmic units . 18 Table C.1 Coordinate system conversion 26 PD IEC/TS 62132-9:2014 4 IEC TS 62132-9:2014 IEC 2014 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ INTEGRATED CIRCUITS MEASUREMENT OF ELECTROMAGNETIC IMMUNITY Part 9: Measurement of radiated i
17、mmunity Surface scan method FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions conce
18、rning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Thei
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26、ses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Atten
27、tion is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. The main task of IEC technical committees is to prepare International Standards. In exceptional cir
28、cumstances, a technical committee may propose the publication of a technical specification when the required support cannot be obtained for the publication of an International Standard, despite repeated efforts, or the subject is still under technical development or where, for any other reason, ther
29、e is the future but no immediate possibility of an agreement on an International Standard. Technical specifications are subject to review within three years of publication to decide whether they can be transformed into International Standards. IEC TS 62132-9, which is a technical specification, has
30、been prepared by subcommittee 47A: Integrated circuits, of IEC technical committee 47: Semiconductor devices. PD IEC/TS 62132-9:2014IEC TS 62132-9:2014 IEC 2014 5 The text of this technical specification is based on the following documents: Enquiry draft Report on voting 47A/924/DTS 47A/936/RVC Full
31、 information on the voting for the approval of this technical specification can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 62132 series, published under the general
32、 title Integrated circuits Measurement of electromagnetic immunity, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the s
33、pecific publication. At this date, the publication will be transformed into an International standard, reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to
34、be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. PD IEC/TS 62132-9:2014 6 IEC TS 62132-9:2014 IEC 2014 INTRODUCTION Techniques for generating near-fields over integrated circuits and their surrounding environment can identify
35、 the areas susceptible to radiation, which could cause errors in the device. The ability to associate magnetic or electric field strengths with a particular location on a device can provide valuable information for improvement of an IC both in terms of functionality and EMC performance. Near-field s
36、can techniques have considerably evolved over recent years. The improved efficiency, bandwidth and spatial resolution of the probes offer analysis of integrated circuits operating into the gigahertz range. Post-processing can considerably enhance the resolution of a near-field scan test bench and th
37、e measured data can be shown in various ways per users choice. PD IEC/TS 62132-9:2014IEC TS 62132-9:2014 IEC 2014 7 INTEGRATED CIRCUITS MEASUREMENT OF ELECTROMAGNETIC IMMUNITY Part 9: Measurement of radiated immunity Surface scan method 1 Scope This part of IEC 62132 provides a test procedure, which
38、 defines a method for evaluating the effect of near electric, magnetic or electromagnetic field components on an integrated circuit (IC). This diagnostic procedure is intended for IC architectural analysis such as floor planning and power distribution optimization. This test procedure is applicable
39、to testing an IC mounted on any circuit board that is accessible to the scanning probe. In some cases it is useful to scan not only the IC but also its environment. For comparison of surface scan immunity between different ICs, the standardized test board defined in IEC 62132-1 should be used. This
40、measurement method provides a mapping of the sensitivity (immunity) to electric- or magnetic-near-field disturbance over the IC. The resolution of the test is determined by the capability of the test probe and the precision of the Probe-positioning system. This method is intended for use up to 6 GHz
41、. Extending the upper limit of frequency is possible with existing probe technology but is beyond the scope of this specification. The tests described in this document are carried out in the frequency domain using continuous wave (CW), amplitude modulated (AM) or pulse modulated (PM) signals. 2 Norm
42、ative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments)
43、 applies. IEC 60050 (all parts), International Electrotechnical Vocabulary (available at ) IEC 62132-1, Integrated circuits Measurement of electromagnetic immunity, 150 kHz to 1 GHz Part 1: General conditions and definitions IEC TS 61967-3, Integrated circuits Measurement of electromagnetic emission
44、s, 150 kHz to 1 GHz Part 3: Measurement of radiated emissions Surface scan method 3 Terms, definitions and abbreviations 3.1 Terms and definitions For the purpose of this document, the definitions and definitions given in IEC 62132-1, IEC 60050-131 and IEC 60050-161, as well as the following apply.
45、3.1.1 altitude distance between the tip of the near-field probe and the reference plane of the scan (e.g. the PCB, the upper surface of the package) PD IEC/TS 62132-9:2014 8 IEC TS 62132-9:2014 IEC 2014 Note 1 to entry: The term “altitude” refers to the vertical direction in a Cartesian coordinate s
46、ystem (Z-axis) in this document. SOURCE: IEC 61967-3:2014, 3.1.1 3.1.2 probe factor ratio of electric or magnetic field strength at a specified location in near-field evaluation to the signal level measured at the output connection or applied to the input connection of a probe SOURCE: IEC 61967-3:20
47、14, 3.1.2 3.1.3 spatial resolution aptitude of a probe to distinguish measured field between two points SOURCE: IEC 61967-3:2014, 3.1.3 3.2 Abbreviations DUT: device under test NFS: near-field scan PCB: printed circuit board SOURCE: IEC 61967-3:2014, 3.2 4 General The electric and magnetic fields ap
48、plied by scanning over the surface of an IC yields information on the relative sensitivity of blocks within the IC package. It enables the comparisons between different architectures to facilitate improvements in RF immunity of the IC. Default criteria are defined to determine the immunity level at
49、a specific location. Characterizing an IC involves the acquisition of a series of measurements of applied power to the probe at specific frequencies. Each scan over a die or package collects a large amount of data depending on the number of locations scanned and the number of frequencies measured at each location. Because of the required precision and the amount of measured data, this test method uses a computer-con
