1、Nanomanufacturing Key control characteristics Part 6-4: Graphene Surface conductance measurement using resonant cavity PD IEC/TS 62607-6-4:2016 BSI Standards Publication WB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06National foreword This Published Document is the UK implementation of IEC/
2、TS 62607-6- 4:2016. The UK participation in its preparation was entrusted to Technical Committee NTI/1, Nanotechnologies. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a
3、contract. Users are responsible for its correct application. The British Standards Institution 2016. Published by BSI Standards Limited 2016 ISBN 978 0 580 91019 7 ICS 07.030 Compliance with a British Standard cannot confer immunity from legal obligations. This Published Document was published under
4、 the authority of the Standards Policy and Strategy Committee on 31 October 2016. Amendments/corrigenda issued since publication Date Text affected PUBLISHED DOCUMENT PD IEC/TS 62607-6-4:2016 IEC TS 62607-6-4 Edition 1.0 2016-09 TECHNICAL SPECIFICATION Nanomanufacturing Key control characteristics P
5、art 6-4: Graphene Surface conductance measurement using resonant cavity INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 07.030 ISBN 978-2-8322-3667-3 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distribut
6、or. colour inside PD IEC/TS 62607-6-4:2016 2 IEC TS 62607-6-4:2016 IEC 2016 CONTENTS FOREWORD . 3 INTRODUCTION . 5 1 Scope 6 2 Normative references. 6 3 Terms and definitions 6 3.1 Graphene layers . 6 3.2 Measurement terminology . 8 4 Microwave cavity test fixture 9 5 Test specimen . 10 6 Measuremen
7、t procedure 10 6.1 Apparatus . 10 6.2 Calibration 11 6.3 Measurements 11 6.3.1 General . 11 6.3.2 Empty cavity 11 6.3.3 Specimen. 11 6.3.4 Repeated procedure . 12 6.3.5 Substrate . 12 7 Calculations of surface conductance 12 8 Report . 12 9 Accuracy consideration 13 Annex A (informative) Case study
8、of surface conductance measurement of single- layer and few-layer graphene 14 A.1 General . 14 A.2 Cavity perturbation procedure 14 A.3 Experimental procedure 15 A.4 Results . 15 A.5 Surface conductance of single-layer graphene and few-layer graphene 16 A.6 Summary 17 Bibliography . 18 Figure 1 Micr
9、owave cavity test fixture . 10 Figure A.1 S 21magnitude of the resonant peak TE 103as a function of frequency at several specimen insertions (h x ) . 16 Figure A.2 Plots of 1/Q x 1/Q 0as a function of the normalized specimen area (w h x ). . 16 PD IEC/TS 62607-6-4:2016IEC TS 62607-6-4:2016 IEC 2016
10、3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ NANOMANUFACTURING KEY CONTROL CHARACTERISTICS Part 6-4: Graphene Surface conductance measurement using resonant cavity FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national
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20、 cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for ident
21、ifying any or all such patent rights. The main task of IEC technical committees is to prepare International Standards. In exceptional circumstances, a technical committee may propose the publication of a Technical Specification when the required support cannot be obtained for the publication of an I
22、nternational Standard, despite repeated efforts, or the subject is still under technical development or where, for any other reason, there is the future but no immediate possibility of an agreement on an International Standard. Technical Specifications are subject to review within three years of pub
23、lication to decide whether they can be transformed into International Standards. IEC TS 62607-6-4, which is a Technical Specification, has been prepared by IEC technical committee 113: Nanotechnology for electrotechnical products and systems. PD IEC/TS 62607-6-4:2016 4 IEC TS 62607-6-4:2016 IEC 2016
24、 The text of this Technical Specification is based on the following documents: Enquiry draft Report on voting 113/295/DTS 113/324/RVC Full information on the voting for the approval of this Technical Specification can be found in the report on voting indicated in the above table. This document has b
25、een drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing Key control characteristics, can be found on the IEC website. The committee has decided that the contents of this document will remain uncha
26、nged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be transformed into an International Standard, reconfirmed, withdrawn, replaced by a revised edition, or amended. A bilingual version
27、 of this publication may be issued at a later date. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour pri
28、nter. PD IEC/TS 62607-6-4:2016IEC TS 62607-6-4:2016 IEC 2016 5 INTRODUCTION The microwave resonant cavity test method for surface conductance is non-contact, fast, sensitive and accurate. It is well suited for standards, research and development (R&D), and for quality control in the manufacturing of
29、 two-dimensional (2D) nano-carbon materials. These sheet-like or flake-like carbon forms can be assembled into atomically-thin monolayer or multilayer graphene materials, which can be stacked, folded, crumpled or pillared into a variety of nano-carbon architectures with the lateral dimension limited
30、 to a few tenths of a nanometre. Many of these materials are new and exhibit extraordinary physical and electrical properties such as optical transparency, anisotropic heat diffusivity and charge transport that are of significant interest to science, technology and commercial applications 1, 2 1 . D
31、epending on particular morphologies, density of states and structural perfection, the surface conductance of these materials may vary from 1 S to about 10 4S. Conventional direct current (DC) surface conductance measurement techniques require a complex test vehicle and interconnections for making el
32、ectrical contacts, which affect and alter the measurement, making it difficult to decouple the intrinsic properties of the material. In comparison, the resonant cavity measurement method is fast and non-contact. Thus, it is well suited for use in R&D and manufacturing environments where the surface
33、conductance is a critical functional parameter. Moreover, it can be employed to measure electrical characteristics of other nano-size structures. _ 1Numbers in square brackets refer to the Bibliography PD IEC/TS 62607-6-4:2016 6 IEC TS 62607-6-4:2016 IEC 2016 NANOMANUFACTURING KEY CONTROL CHARACTERI
34、STICS Part 6-4: Graphene Surface conductance measurement using resonant cavity 1 Scope This part of IEC 62607 establishes a method for determining the surface conductance of two- dimensional (2D) single-layer or multi-layer atomically thin nano-carbon graphene structures. These are synthesized by ch
35、emical vapour deposition (CVD), epitaxial growth on silicon carbide (SiC), obtained from reduced graphene oxide (rGO) or mechanically exfoliated from graphite 3. The measurements are made in an air filled standard R100 rectangular waveguide configuration, at one of the resonant frequency modes, typi
36、cally at 7 GHz 4. Surface conductance measurement by resonant cavity involves monitoring the resonant frequency shift and change in the quality factor before and after insertion of the specimen into the cavity in a quantitative correlation with the specimen surface area. This measurement does not ex
37、plicitly depend on the thickness of the nano-carbon layer. The thickness of the specimen does not need to be known, but it is assumed that the lateral dimension is uniform over the specimen area. 2 Normative references The following documents are referred to in the text in such a way that some or al
38、l of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60153-2, Hollow metallic waveguides Part 2: Relevant specifications for or
39、dinary rectangular waveguides 3 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 60153-2 and the following apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/w
40、ww.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 3.1 Graphene layers 3.1.1 graphene single-layer graphene 1LG single layer of carbon atoms with sp 2 -electronic hybridization bound to three neighbours in a honeycomb structure Note 1 to entry: It is an important b
41、uilding block of many carbon nano-objects. PD IEC/TS 62607-6-4:2016IEC TS 62607-6-4:2016 IEC 2016 7 SOURCE: ISO/TS 80004-3:2010, 2.11, modified. 3.1.2 bilayer graphene 2LG two-dimensional material consisting of two well-defined stacked graphene layers Note 1 to entry: If the stacking registry is kno
42、wn it can be specified separately, for example as “Bernal stacked bilayer graphene”. 3.1.3 trilayer graphene 3LG two-dimensional material consisting of three well-defined stacked graphene layers Note 1 to entry: If the stacking registry is known it can be specified separately, for example as “Bernal
43、 stacked trilayer graphene“ or “twisted trilayer graphene”. 3.1.4 few-layer graphene FLG two-dimensional material consisting of three to ten well-defined stacked graphene layers 3.1.5 nanoplate nano-object with one external dimension in the nanoscale and the other two external dimensions significant
44、ly larger SOURCE: ISO/TS 80004-2:2015, 4.6 3.1.6 nanosheet nanoplate with extended lateral dimensions 3.1.7 graphene oxide GO chemically modified graphene prepared by oxidation and exfoliation of graphite that is accompanied by extensive oxidative modification of the basal plane Note 1 to entry: Gra
45、phene oxide is a single material with a high oxygen content, typically characterized by C/O atomic ratios less than 3.0 and typically closer to 2.0. 3.1.8 reduced graphene oxide rGO graphene oxide that has been processed to reduce its oxygen content Note 1 to entry: This can be produced by chemical,
46、 thermal, microwave, photo-chemical, photo-thermal or microbial/bacterial methods or by exfoliating reduced graphite oxide. Note 2 to entry: If graphene oxide was fully reduced then graphene would be the product, however in practice some oxygen containing functional groups will remain and not all sp
47、 3bonds will return back to sp 2configuration. Different reducing agents will lead to different carbon to oxygen ratios and different chemical compositions in reduced graphene oxide PD IEC/TS 62607-6-4:2016 8 IEC TS 62607-6-4:2016 IEC 2016 3.1.9 graphene material nanomaterial based on graphene Note
48、1 to entry: Examples of graphene material are multilayered graphene (less than about 10 layers), chemically modified forms (GO, rGO), and materials made via another precursor material or process such as chemical vapour deposition (CVD) 3. 3.2 Measurement terminology 3.2.1 s ssurface conductance char
49、acteristic physical property of two-dimensional materials describing the ability to conduct electric current Note 1 to entry The SI unit of measure of s sis siemens (S). In the trade and industrial literature, however, siemens per square (S/square) is commonly used when referring to surface conductance. This is to avoid confusion between surface conductance and electric conductance (G), which share the same unit of measure: G = I/U = s s(w/l). Note 2
