1、Designation: D5127 12D5127 13Standard Guide forUltra-Pure Water Used in the Electronics andSemiconductor Industries1This standard is issued under the fixed designation D5127; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year
2、 of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide provides recommendations for water quality related to electronics and semiconductor-industry manufactur
3、ing.Seven classifications of water are described, including water for line widths as low as 0.032 micron. In all cases, therecommendations are for water at the point of distribution (POD).1.2 Water is used for washing and rinsing of semiconductor components during manufacture. Water is also used for
4、 cleaningand etching operations, making steam for oxidation of silicon surfaces, preparing photomasks, and depositing luminescentmaterials. Other applications are in the development and fabrication of solid-state devices, thin-film devices, communication lasers,light-emitting diodes, photo-detectors
5、, printed circuits, memory devices, vacuum-tube devices, or electrolytic devices.1.3 Users needing water qualities different from those described here should consult other water standards, such as SpecificationD1193 and Guide D5196.1.4 This standard does not purport to address all of the safety conc
6、erns, if any, associated with its use. It is the responsibilityof the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatorylimitations prior to use.2. Referenced Documents2.1 ASTM Standards:2D1129 Terminology Relating to WaterD1193 S
7、pecification for Reagent WaterD1976 Test Method for Elements in Water by Inductively-Coupled Argon Plasma Atomic Emission SpectroscopyD2791 Test Method for On-line Determination of Sodium in WaterD3919 Practice for Measuring Trace Elements in Water by Graphite Furnace Atomic Absorption Spectrophotom
8、etryD4191 Test Method for Sodium in Water by Atomic Absorption SpectrophotometryD4192 Test Method for Potassium in Water by Atomic Absorption SpectrophotometryD4327 Test Method for Anions in Water by Suppressed Ion ChromatographyD4453 Practice for Handling of High Purity Water SamplesD4517 Test Meth
9、od for Low-Level Total Silica in High-Purity Water by Flameless Atomic Absorption SpectroscopyD5173 Test Method for On-Line Monitoring of Carbon Compounds in Water by Chemical Oxidation, by UV Light Oxidation,by Both, or by High Temperature Combustion Followed by Gas Phase NDIR or by Electrolytic Co
10、nductivityD5196 Guide for Bio-Applications Grade WaterD5391 Test Method for Electrical Conductivity and Resistivity of a Flowing High Purity Water SampleD5462 Test Method for On-Line Measurement of Low-Level Dissolved Oxygen in WaterD5542 Test Methods for Trace Anions in High Purity Water by Ion Chr
11、omatographyD5544 Test Method for On-Line Measurement of Residue After Evaporation of High-Purity WaterD5673 Test Method for Elements in Water by Inductively Coupled PlasmaMass SpectrometryD5996 Test Method for Measuring Anionic Contaminants in High-Purity Water by On-Line Ion Chromatography1 This gu
12、ide is under the jurisdiction of ASTM Committee D19 on Water and is the direct responsibility of Subcommittee D19.02 on Quality Systems, Specification, andStatistics.Current edition approved June 15, 2012Jan. 1, 2013. Published July 2012February 2013. Originally approved in 1990. Last previous editi
13、on approved in 20072012 asD5127 07.D5127 12. DOI: 10.1520/D5127-12.10.1520/D5127-13.2 For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at serviceastm.org. For Annual Book of ASTM Standardsvolume information, refer to the standards Document Summary pa
14、ge on the ASTM website.This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Becauseit may not be technically possible to adequately depict all changes accurately, ASTM recommends that
15、users consult prior editions as appropriate. In all cases only the current versionof the standard as published by ASTM is to be considered the official document.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States1D5997 Test Method for On-
16、Line Monitoring of Total Carbon, Inorganic Carbon in Water by Ultraviolet, Persulfate Oxidation,and Membrane Conductivity DetectionF1094 Test Methods for Microbiological Monitoring of Water Used for Processing Electron and Microelectronic Devices byDirect Pressure Tap Sampling Valve and by the Prest
17、erilized Plastic Bag Method3. Terminology3.1 DefinitionsFor definitions of terms used in this guide refer to Terminology D1129.3.2 Definitions of Terms Specific to This Standard:3.2.1 total bacterial counts, ntotal number of cultureable microorganisms present in the named sample, excluding obligatea
18、naerobic organisms, determined in accordance with Test Methods F1094.3.2.2 total organic carbon (TOC), ncarbon measured after inorganic-carbon response has been eliminated by one of theprescribed ASTM test methods.4. Significance and Use4.1 This guide recommends the water quality required for the el
19、ectronics and microelectronics industries. High-purity water isrequired to prevent contamination of products during manufacture, since contamination can lead to an unacceptable, low yield ofelectronic devices.4.2 The range of water purity is defined in accordance with the manufacturing process. The
20、types of ultra-pure water are definedwith respect to device line width. In all cases, the water-quality recommendations apply at the point of distribution.4.3 The limits on the impurities are related to current contamination specifications and to available analytical methods (eitherperformed in a su
21、itable clean laboratory or by on-line instrumentation). On-line and off-line methods are used in accordance withcurrent industry practice. Concentration of the sample may be required to measure the impurities at the levels indicated in Table1.5. Classification5.1 Seven types of electronic-grade wate
22、r are described in this guide. In all cases, the water-quality recommendations apply atthe point of distribution.5.1.1 Type E-1This water is classified as microelectronic water to be used in the production of devices having line widthsbetween 0.5 and 1.0 m.5.1.2 Type E-1.1This water is classified as
23、 microelectronic water to be used in the production of devices having line widthsbetween 0.25 and 0.35 m.5.1.3 Type E-1.2This water is classified as microelectronic water to be used in the production of devices having line widthsbetween 0.09 and 0.18 m.5.1.4 Type E-1.3This water is classified as mic
24、roelectronic water to be used in production of devices having line widthsbetween 0.065 and 0.032m. This type is the water of ultimate practical purity produced in large volumes, and is intended for themost critical microelectronic uses. ASTM Type E-1.3 is also identical to the SEMI (Semiconductor Eq
25、uipment and MaterialsInternational) Guide for Ultrapure Water Used in Semiconductor Processing (F063), 2010 version.5.1.5 Type E-2This water is classified as microelectronic water to be used in the production of devices that have dimensionsbetween 1 and 5 m.5.1.6 Type E-3This grade of water is class
26、ified as macroelectronic water to be used in the production of devices havingdimensions larger than 5 m. This grade may be used to produce larger components and some small components not affected bytrace amounts of impurities.5.1.7 Type E-4This grade may be classified as water used in preparation of
27、 plating solutions and for other applications wherethe water being used can be of lesser quality.5.2 Components of the water system for producing electronic-grade water shall be grouped into five general process sectionsfor the purpose of simplifying the organization of the components of the systems
28、. These processes are described in 5.2.1-5.2.5.5.2.1 PretreatmentThe processes in this category include the addition of various types of coagulants, precipitating agents,clarifiers, sedimentation tanks, and particulate-filtration systems (including sand filters, disposable filter elements, ultrafilt
29、ermembranes, and other particle-removing systems). Adsorbent or entrapment beds may include greensand, activated carbon, andvarious synthetic materials specific for certain organic and inorganic impurities.5.2.2 DesalinationThis process is fundamental to the production of ultra-pure water of all gra
30、des, and may include more thanone of the processes of ion exchange, reverse osmosis, electrodialysis, continuous electrodeionization, or all of the above. The sizeof the system governs the choice of the combination of desalination processes. Various configurations of the different processesshould be
31、 considered, including two-bed and mixed-bed demineralization, multi-stage reverse osmosis employing various typesof membranes, electrodeionization, and electrodialysis.5.2.3 Organic and Biological Removal SystemsRemoval of biological and organic contaminants is an important adjunct to anysystem use
32、d to prepare ultra-pure water. Dissolved organic compounds can accumulate in the system during the process as wellD5127 132TABLE 1 Requirements for Water at the Point of Distribution in the Electronics and Semiconductor IndustriesAParameter Type E-1 Type E-1.1 Type E-1.2B Type E-1.3B Type E-2 Type E
33、-3 Type E-4Linewidth (microns) 1.00.5 0.350.25 0.180.09 0.0650.032 5.01.0 5.0 Resistivity, 25C (On-line) 18.1 18.2 18.2 18.2 16.5 12 0.5TOC (g/L) (on-line for 0.05 m 500C0.05 m 5000.050.1 1000 200 N/AC 0.050.1 1000 200 N/A 0.10.2 1000 350 100 N/A 0.20.5 500 100 10 N/A 0.5-1.0 200 50 5 N/A 1.0 100 20
34、 1 N/A SEM particles/L (micron range)0.10.2 1000 700 250 N/A 0.20.5 500 400 100 N/A 3000 0.51 100 50 30 N/A 10 000 10 50 30 10 N/A 100 000Bacteria in CFU/Volume100 mL Sample 5 3 1 N/A 10 50 1001 L Sample 10 110 L Sample 1Silica total (g/L) 5 3 1 0.5 10 50 1000Silica dissolved (g/L) 3 1 0.5 0.5 Anion
35、s and Ammonium by IC (g/L)Ammonium 0.1 0.10 0.05 0.050 Bromide 0.1 0.05 0.02 0.050 Chloride 0.1 0.05 0.02 0.050 1 10 1000Fluoride 0.1 0.05 0.03 0.050 Nitrate 0.1 0.05 0.02 0.050 1 5 500Nitrite 0.1 0.05 0.02 0.050 Phosphate 0.1 0.05 0.02 0.050 1 5 500Sulfate 0.1 0.05 0.02 0.050 1 5 500Metals by ICP/M
36、S (g/L)Aluminum 0.05 0.02 0.005 0.001 Antimony 0.001Arsenic 0.001Barium 0.05 0.02 0.001 0.001 BoronD 0.3 0.1 0.05 0.050 BoronC 0.3 0.1 0.05 0.050 Cadmium 0.010Calcium 0.05 0.02 0.002 0.001 Chromium 0.05 0.02 0.002 0.001 Copper 0.05 0.02 0.002 0.001 1 2 500Iron 0.05 0.02 0.002 0.001 Lead 0.05 0.02 0.
37、005 0.001 Lithium 0.05 0.02 0.003 0.001 Magnesium 0.05 0.02 0.002 0.001 Manganese 0.05 0.02 0.002 0.010 Nickel 0.05 0.02 0.002 0.001 1 2 500Potassium 0.05 0.02 0.005 0.001 2 5 500Sodium 0.05 0.02 0.005 0.001 1 5 1000Strontium 0.05 0.02 0.001 Tin 0.010Titanium 0.010Vanadium 0.010Zinc 0.05 0.02 0.002
38、0.001 1 5 500Temperature Stability (K) 1Temperature Gradient (K/10 min) 0.1Dissolved Nitrogen On-line (mg/L) 8-18Dissolved Nitrogen Stability (mg/L) 2A The user should be advised that analytical data often are instrument dependent and technique dependent. Thus, the numbers in Table 1 are only guidel
39、ines. This tablewill be revised whenever the semiconductor industry develops new linewidths, thereby keeping the guidelines current.BValues shown in Type E-1.3 are a result of aligning ITRS risk factors of known contaminates to the production processes found in current semiconductor processing forth
40、e linewidth of interest and may differ in a few cases to those found in Type E-1.2. Users who wish to use the higher numbers for Type E-1.2 water should feel free todo so.All values are equal to or less than with the exception of Resistivity.CParticle metrology has not kept pace with the decreasing
41、line-width of semiconductor manufacturing. Current line-widths require the ability to monitor 20-nm particles.However, existing Optical Particle Counters (OPCs) are only capable of detecting 50-nm particles with a counting efficiency of 5%, and a background count (noise level)of 500 particles per li
42、ter. Particle-counting statistics become important as count levels approach the noise level. Therefore, the OPC setup and performance must beoptimized. Particle levels must consistently be within the noise level of any OPC (regardless of any specified level).C Boron is monitored only as an operation
43、al parameter for monitoring the ion-exchange beds.D5127 133as being present in the original water. Methods of minimizing biological contamination include the addition of hydrogen peroxideand ozone. Ultraviolet irradiation at the 185 nm wavelength provides intense energy for breaking chemical bonds a
44、nd producestraces of ozone. The 185 nm light lyses bacteria and breaks down organic compounds to organic acids and carbon dioxide. Alsoformed are active intermediate reactants; the main such reactant is the hydroxyl radical, which inactivates bacteria. Variables suchas water flow and degree of certa
45、in contaminants like turbidity, iron, and humic and fluvic acid should be considered to achievethe maximum effect from the irradiation. With the destruction of organics, TOC will be reduced. Therefore, 185 nm light shouldonly be used upstream of the final ion-exchange component. Ultraviolet irradiat
46、ion at 254 nm significantly reduces the growth oforganisms by dislocating the DNA base pairs. This process prevents the bacteria from replicating. Membrane filters (includingreverse osmosis and ultrafilters) may also remove biological impurities as well as organic molecules. Synthetic adsorbent colu
47、mnsranging from porous resins to activated carbon may be effective in removing organics.5.2.4 Particulate RemovalParticulate removal in the production of ultra-pure water is differentiated from pretreatment thatremoves gross suspended substances. Particles of all types (biological, organic, or inorg
48、anic) significantly interfere with theproduction of electronic components. Processes used to remove particulate matter generally consist of the use of a microporousmembrane structure of flat, cylindrical, or pleated configuration. The Final Filters are preceded by a bank of Prefilters with a 2larger
49、 pore size. Ultrafilters and reverse-osmosis units may also be used for final filtration. The choice of the particular membranedepends in part upon the pore size, characteristics of that membrane, and the size of particle to be removed. As a general rule,particles should be removed if they are larger than 10 % of the minimum dimension of the device being produced.5.2.5 Storage and Distribution System
