1、 MIL-PRF-19500/296F 20 January 2012 SUPERSEDING MIL-PRF-19500/296E 1 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB Inactive for new design for the 2N2609 device after 7 June 1999. This specification is approved
2、for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for P-channel, junction, silicon f
3、ield-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-18) and figure 2 (surface mount, UB). 1.3 Maximum ratings. Types PT(1) TA= +25C VGSS TSTGand TJ 2N2609, 2N2609UB mW 300 V dc 30
4、 C -65 to +200 (1) Derate linearly, 1.71 mW/C for TA= +25C. 1.4 Primary electrical characteristics at TA= +25C. Limit IDSS VDS= -5 V dc VGS= 0 VGS(off) VDS= -5 V dc ID= -1.0 A dc CISS VDS= -5 V dc VGS= 0 V dc f = 1 MHz YFS VDS= -5 V dc VGS= 0 V dc f = 1 kHz IGSS VGS= 15 V dc VDS= 0 V dc Minimum Maxi
5、mum mA dc -2.0 -10.0 V dc 0.75 6.00 pF 10 mho 2,000 6,250 nA dc 22.5 AMSC N/A FSC 5961 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2012. * Comments, suggestions, or questions on this document should be addressed t
6、o DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. Provided by IHSNot fo
7、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of t
8、his specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether o
9、r not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solici
10、tation or contract. MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or f
11、rom the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this docu
12、ment takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices
13、furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, sym
14、bols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-18) and figure 2 (surface mount, UB). 3.4.1 Lead finish. Lead finish shall be sold
15、erable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as sp
16、ecified in 1.3, 1.4 and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part numbe
17、r, the date code, and the manufacturers symbol or logo. The JAN prefix can be abbreviated as J. The “2N“ prefix and the “UB“ suffix can also be omitted. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that wi
18、ll affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 h .020
19、 0.51 LD .016 .021 0.41 0.53 2, 7 LL .500 .750 12.70 19.05 7 LU .016 .019 0.41 0.48 3,7 M .0707 Nom 1.80 Nom 4 N .0354 Nom 0.90 Nom 4 TL .028 .048 0.71 1.22 6 TW .036 .046 0.91 1.17 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Measured in the zone beyond
20、 .250 (6.35 mm) from the seating plane. 3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 4. When measured in a gauging plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below the seating plane of the transistor, maximum diameter leads shall be within .007 (0.18 mm) of t
21、heir true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. Figure 3 shows the preferred measurement method. 5. The gate shall be electrically connected to the case. 6. Measured from the maximum diameter of the actu
22、al device. 7. All three leads. (see 3.4.1). 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions (2N2609, similar to TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 4 S
23、ymbol Dimensions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .040 0.89 1.02 BL .115 .128 2.92 3.25 LS2 .071 .079 1.81 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012
24、 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Drain, Pad 2 = Source, Pad 3 = Gate, Pad 4 = Shielding
25、 connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (2N2609UB). CERAMIC Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 5 4. VERIFICATION
26、 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Conformance inspection (see 4.3 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF
27、-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified
28、 in table III herein shall be performed by the first inspection lot of this revision to maintain qualification. 4.3 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3.1 Group A inspection. Group A inspection shall be conducted in acc
29、ordance with MIL-PRF-19500, and table I herein. 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB JAN of MIL-PRF-19500 and 4.3.2.1 herein. Electrical measurements (end-points) requirements shall be in accor
30、dance with the applicable steps of table II herein. 4.3.2.1 Group B inspection, table E-VIB, of MIL-PRF-19500. Conditions for steady-state operation life are as follows: TA= +150C 5C, VDS= 0; VGS= 24 V dc. No heat sink or forced-air cooling on the devices shall be permitted. 4.3.3 Group C inspection
31、. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) requirements shall be in accordance with the applicable steps of table II herein. 4.3.3.1 Group C inspection, table E-VII, of
32、 MIL-PRF-19500. Conditions for steady-state operation life (acceleration) are as follows: 1,000 hours at VGS= 24 V dc, VDS= 0; TA= +150C 5C. No heat sink or forced-air cooling on the devices shall be permitted. 4.3.4 Group E inspection. Group E inspection shall be conducted in accordance with the co
33、nditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with the applicable steps of table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license
34、from IHS-,-,-MIL-PRF-19500/296F 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Gate - source breakdown voltage 3401 Bias condition C; IG= 1.0 A dc; VDS= 0. V(BR)GSS30 V dc Gate reverse
35、current 3411 Bias condition C; VGS= 30 V dc; VDS= 0. IGSS130 nA dc Gate reverse current 3411 Bias condition C; VGS= 15 V dc; VDS= 0. IGSS222.5 nA dc Zero-gate-voltage drain current 3413 Bias condition C; VDS= 5 V dc; VGS= 0. IDDSS1-2.0 -10.0 mA dc Gate to source cutoff voltage 3403 ID= 1 A dc; VDS=
36、5 V dc VGS(off)0.75 6.0 V dc Subgroup 3 High-temperature operation: TA= +150C Drain current 3413 Bias condition C, VGS= 0 V dc; VDS= 5 IDDSS2 -1.0 mA dc Gate reverse current 3411 Bias condition C; VGS= 15 V dc; VDS= 0. IGSS345 A dc Low-temperature operation: TA= -55C Small-signal, common- source, sh
37、ort-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz. Yfs1 9,375 mho See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL
38、-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 4 Small-signal common- source, short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz. Yfs2 2,000 6,250 mho Small-signal common-source, short-circuit, input capacitance 3431 VDS= 5 V dc; VGS= 0; f = 1 MHz. Ciss10 p
39、F Common-source spot noise figure VDS= 5 V dc; VGS= 0; BW= 16 percent; RG= 1 Mohm; egen= 1.82 mV; RL= 220 ohms; f = 1 kHz; (see figure 3). NF 3 dB Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted withou
40、t license from IHS-,-,-MIL-PRF-19500/296F 8 TABLE II. Groups B, C, and E electrical measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Symbol Limit Unit Method Conditions Min Max 1 Gate reverse current 3411 Bias condition C; VGS= 15 V dc; VDS= 0 IGSS123 nA dc 2 Gate reverse current 3411 Bias conditi
41、on C; VGS= 15 V dc; VDS= 0 IGSS245 nA dc 3 Drain current 3413 Bias condition C; VGS= 5 V dc; VDS= 0 IDSS1-2.0 -10.0 mA dc 4 Drain current 3413 Bias condition C; VGS= 5 V dc; VDS= 0 IDSS2-1.80 -11.0 mA dc 5 Small-signal, common-source short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS=
42、0; f = 1 kHz Yfs1 2,000 6,250 mho 6 Small-signal, common-source short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz Yfs3 1,800 6,875 mho 1/ The electrical measurements for table E-VIB (JAN) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 3, an
43、d 5. b. Subgroups 3 and 6, see table II herein, steps 2, 4, and 6. 2/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 3, and 5. b. Subgroup 6, see table II herein, steps 2, 4, and 6. 3/ The electrical measurements for t
44、able E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see table II herein, all steps. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 9 * TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only. I
45、nspection MIL-STD-750 Qualification and Method Conditions large lot quality conformance inspection Subgroup 1 45 devices c = 0 Temperature cycling 1051 -55C to +150C, 500 cycles Hermetic seal Fine leak Gross leak 1071 Electrical measurements See table II, all steps Subgroup 2 1/ 45 devices c = 0 Ste
46、ady-state operating life 1026 VCB 10 V dc, TA= +150C, VDS= 0; VGS= 24 V dc. Electrical measurements See table II, all steps Subgroups 4 and 5 Not applicable Subgroup 8 45 devices c = 0 Reverse stability 1033 Condition A 1/ A separate sample for each test shall be pulled. Provided by IHSNot for Resal
47、eNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 10 NOTE: Or equivalents Procedure: The voltage and current shall be applied to the terminals, and the noise figure shall then be measured as follows: 1. Connect egen to the input of the device under test. 2. Adj
48、ust gain of system to give 0 dB reading on a convenient scale of the Ballintine voltmeter or equivalent. 3. Switch the device input to ground. 4. Increase system gain by 60 dB. 5. Read noise figure directly in dBs on Ballintine scale or equivalent. FIGURE 3. Common-source spot noise figure test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/296F 11 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
