1、 MIL-PRF-19500/560K 2 October 2010 SUPERSEDING MIL-PRF-19500/560J 2 May 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPE 2N5339 AND 2N5339U3, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCC, JANKCC, JANKCC
2、M, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, and JANKCCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE
3、* 1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device typ
4、e as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have pas
5、sed RHA requirements. 1.2 Physical dimensions. See figure 1 (TO-39), figure 2 for U3 devices (TO-276AA) and figures 3 and 4 for JANHC and JANKC (die) dimensions. 1.3 Maximum ratings Unless specified, TA= 25C. Types PT(1) TA= +25C PT(1) TC= +25C RJARJCVCBOVCEOVEBOICIBTJand TSTGW W C/W C/W V dc V dc V
6、 dc A dc A dc C 2N5339 2N5339U3 1.0 1.0 17.5 75 175 10 2.3 100 100 100 100 6.0 6.0 5.0 5.0 1.0 1.0 -65 to +200 -65 to +200 (1) For derating, see figures 5, 6, and 7. 1.4 Primary electrical characteristics TA= +25C. (Unless otherwise indicated, applies to all devices.) Limits hFE1 (1)VCE= 2.0 V dc; I
7、C= 0.5 A dc hFE2 (1)VCE= 2.0 V dc; IC= 2.0 A dc hFE3(1) VCE= 2.0 V dc; IC= 5.0 A dc Min Max 60 60 240 40 (1) See note at end of 1.4. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, O
8、H 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with thi
9、s document shall be completed by 2 January 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 2 1.4 Primary electrical characteristics TA= +25C. - Continued. Limits |hFE| f = 10 MHz VCE= 10 V dc IC= 0.5 A dc Cobo VCE= 10 V dc IE
10、= 0 100 kHz f 1 MHz Switching VCE(SAT)1 IC= 2.0 A dc IB= 0.2 A dc (1) VBE(SAT)1 IC= 2.0 A dc IB= 0.2 A dc (1) tontoffpF s s V dc V dc Min 3.0 Max 15.0 250 0.2 2.2 0.7 1.2 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4,
11、 or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all
12、specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specifie
13、d herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Dev
14、ices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in
15、 the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for
16、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 3 FIGURE 1. Physical dimensions (TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 4 Symbol Dimensions Notes Inches Millimeters Mi
17、n Max Min Max CD .305 .355 7.75 9.02 5 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 3 LC .200 TP 5.08 TP 6 LD .016 .021 .41 .53 7 LL .500 .750 12.70 19.05 7 LU .016 .019 .41 .48 7 L1 .050 1.27 7 L2 .250 6.35 7 TL .029 .045 .74 1.14 3 TW .028 .034 .71 .86 10 P .100 2.54 5 Q .050 1.27 4 r .010 .25 10
18、, 11 45 TP 45 TP 6 Notes 1, 2, 8, 9 1, 2, 8, 9 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zo
19、ne is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD appl
20、ies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead designation, depending on device type, shall be as follows: Lead number TO-39 1 2 3 Emitter Base Collector 9. Lead number three is electrically connected to case. 10. Beyond r maximum, TW shall be held for a minimum lengt
21、h of .011 inch (0.28 mm). 11. Symbol r applied to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-39) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-
22、,-,-MIL-PRF-19500/560K 5 Q1 (2X)BWBLCH LW1LL1LL2(2X)CLCLLS2LS1LW2(2X)Q2CLLH(3X)12 3-C-0.10 (0.004)-B-A-0.36 (0.014) CM A B MM3 SURFACESSCHEMATIC Ltr Dimensions Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.40 7.65 CH .1085 .1205 2.76 3.06 LH .010 .020 0.25 0.51 LW1 .281
23、.291 7.14 7.39 LW2 .090 .100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC Q1 .030 0.762 Q2 .030 0.762 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are e
24、quivalent to x symbology. 4. Terminal 1 - collector, terminal 2 -base, terminal 3 - emitter. * FIGURE 2. Physical dimensions and configuration (U3) (SMD 5) (TO-276AA). 3 1 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 6 Letter
25、Dimensions Inches Millimeters Min Max Min Max A .098 .102 2.49 2.59 C .098 .102 2.49 2.59 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: Thickness: .006 inch (0.15 mm) to .010 inch (0.25 mm). Top metal: Alumi
26、num 25,000 minimum, 37,500 nominal. Back metal: Gold 1,500 minimum, 6,500 nominal. Back side: Collector. 4. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions JANHCB and JANKCB. Provi
27、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 7 NOTES: 1. Chip size: .128 x .128 inch .002 inch (3.25 x 3.25 0.051 mm). 2. Chip thickness: .010 .002 inch (0.254 0.0508 mm) nominal. 3. Top metal: Aluminum 30,000 minimum, 33,000 nominal
28、. 4. Back metal: Gold 3,500 minimum, 5,000 nominal. 5. Backside: Collector. 6. Bonding pad: B = .052 x .012 inch (1.321 x 0.305 mm), E = .084 x .012 inch (2.134 x 0.305 mm). FIGURE 4. JANHC and JANKC D-version die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted witho
29、ut license from IHS-,-,-MIL-PRF-19500/560K 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized
30、 by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical
31、dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-39), figure 2 for U3 (TO-276AA), and figures 3 and 4 (JANHC and JANKC) devices herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and he
32、rein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and this document. * 3.5
33、 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. * 3. 6 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately prec
34、ede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements.
35、The electrical test requirements shall be the subgroups specified in table I, group A herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICAT
36、ION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.44 and tables I, II and III) 4.2 Qualification inspection. Qualification inspection shall
37、 be in accordance with MIL-PRF-19500 and herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests,
38、the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. Pr
39、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 9 4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be ma
40、de in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see Measurements MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 9 ICBO1and h
41、FE2Not applicable 11 ICBO1; hFE2, ICBO1= 100 percent of initial value or 200 nA dc, whichever is greater; hFE2 = 15 percent ICBO1and hFE212 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICBO1= 100 percent of initial value or 200 nA dc, whichever is greater; hFE2= 15 percent. Subgroup 2
42、 of table I herein; ICBO1= 100 percent of initial value or 200 nA dc, whichever is greater; hFE2= 15 percent. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are
43、as follows: VCB= 10 - 30 V dc. TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ= minimum +175C and minimum power dissipation of PD= 75 percent PTmaximum as defined in 1.3. With approval of the qualifying activity and pr
44、eparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions.) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential crit
45、eria for burn-in modification approval. 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for JANKC level follows JANS requirements; the JANHC follows JANTX requirements
46、. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, subgroup 4 and figures 8
47、, 9, and 10 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgro
48、up 1 and 2, of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is performed in subgroup 1 of table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/560K 10 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2 herein. 4
