1、 MIL-PRF-19500/698E 20 May 2013 SUPERSEDING MIL-PRF-19500/698D 1 November 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G,
2、 AND H This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requireme
3、nts for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (I
4、AS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (TO-254AA). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC (2) VDSVDGVGSID1(3) (4) TC= +25C ID2(3) (4) TC= +100C IS IDM (5) TJand TSTGW W C/W V dc V dc V dc A dc A dc
5、A dc A (pk) C 2N7470T1 2N7471T1 208 3.0 0.6 60 100 60 100 20 45 45 45 45 45 45 180 180 -55 to +150 (1) Derate linearly 1.67 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and device construction
6、to 45 A. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1; ID1as calculated by footnote (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990
7、, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with
8、this revision shall be completed by 5 July 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/698E 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS=
9、0 VDS= 80 percent of Max rDS(on)(1) VGS= 12 V, ID= ID2EASrated VDSTJ= +25C TJ= +150C V dc V dc A dc mJ Min Max 2N7470T1 60 2.0 4.0 10 0.0066 0.013 824 2N7471T1 100 0.013 0.026 493 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in secti
10、ons 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must
11、meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent
12、 specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semicond
13、uctor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the co
14、ntract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for Resale
15、No reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/698E 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In acc
16、ordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-254AA (2N7470T1 and 2N7471T1). Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 3 LO .150 BSC
17、 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 4 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 4 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P
18、RF-19500/698E 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity f
19、or listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS- Rated avalanche current, nonrepetitive
20、 nC - nano Coulomb 3.4 Interface and physical dimensions. The Interface and physical dimensions shall be as specified in MIL-PRF-19500, figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1
21、 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent
22、 hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection (see 3.5.1). 3.5.1 Handling. MOS devices
23、 must be handled with the following precautions to avoid damage due to the accumulation of static charge. a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices
24、 in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to sou
25、rce, R 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requiremen
26、ts shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provi
27、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/698E 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3).
28、c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 4.2.1 Group E qualif
29、ication. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the
30、prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced. See the design safe operation area figure.
31、 End-point measurements shall be in accordance with table III. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/698E 6 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as
32、specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress t
33、est (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) 9 Subgroup 2 of table I herein, IGSSF1, IGSSR1, IDSS1Not applicable 1
34、0 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is
35、greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or
36、 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(TH)1= 20 percent of initial value Subgroups 2 and 3 of table I
37、herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(TH)1= 20 percent of initial value 17
38、Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, ID
39、SS1, and VGS(th)1shall be invoked. * (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/
40、698E 7 4.3.1 Gate stress test. Apply VGS= 24 V minimum for t = 250 S, minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current . IAS= ID1. b. Inductance L = ( )212EIV VVASDBR DDBRmH minimum. c. Gate to source resistor RGS25 RGS 200 . d. Supply voltage VDD= 25 V dc, except VDD= 50 V dc for
41、 2N7471T1. e. Initial case temperature TC= +25 C, -5 C, +10 C. f. Gate voltage . VGS= 12 V dc. g. Number of pulses to be applied 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that
42、method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 30 - 60 s max. See table III, group E, subgroup 4 herein. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Po
43、ints of application of test voltageAll leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source1,200V /1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500V /second. 4.4 Conformance inspection. Conformance inspectio
44、n shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions spe
45、cified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
46、MIL-PRF-19500/698E 8 * 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 SEM (scanning electron microscope). * B4 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device sha
47、ll be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t = 120 hours min
48、imum; or TA= +150C, t = 240 hours minimum. * 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. * B3 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows
