1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added radiation hardness assurance requirements. -sld 12-06-04 Charles F. Saffle REV SHEET REV A SHEET 15 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve Duncan DLA LAND AND M
2、ARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, VOLTAGE REGULATOR, POSTIVE AND N
3、EGATIVE, ADJUSTABLE DRAWING APPROVAL DATE 09-12-08 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-09206 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E356-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-
4、09206 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are refl
5、ected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 R 09206 01 K X X Federal RHA Device Device Case Lead stock class designator type class outline fi
6、nish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indi
7、cates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 8660 Voltage regulator, positive, adjustable 02 8661 Voltage regulator, negative, adjustable 1.2.3 Device class designator. This device class desi
8、gnator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class De
9、vice performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the
10、standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designat
11、es devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will n
12、ot adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
13、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09206 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package sty
14、le X See figure 1 3 Bottom terminal chip carrier, ceramic 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input-Output differential voltage: Positive regulator Device type 01 40 V Negative regulator: Device type 02 -30 V Operating junction
15、temperature range . -55 C to +150 C Junction temperature (TJ) +150 C Thermal resistance, junction-to-case (qJC) each regulator . 3 C/W Lead temperature (soldering, 10 seconds) 300 C Storage temperature range -65 C to +150 C 1.4 Recommended operating conditions. Output voltage range: Postive voltage
16、regulator Device type 01 +1.25 V to +37 V dc Negative voltage regulator: Device type 02 -1.25 V to -27 V dc Case operating temperature range (TC) -55 C to +125 C 1.5 Radiation features. 2/ Maximum total dose available (dose rate = 50 - 300 rads(Si)/s) 100 krads(Si) 3/ Enhanced Low Dose Rate Sensitvi
17、ty (ELDRS): (dose rate 10 mrads(Si)/s) 50 krads(Si) 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these doc
18、uments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. _ 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrad
19、e performance and affect reliability. 2/ Bipolar device types may degrade from displacement damage from radiation which could affect RHA levels. These device types have not been characterized for displacement damage. 3/ The active elements that make up the devices on this drawing have been tested fo
20、r Total Ionizing Dose (TID) in accordance with MIL-STD-883 test method 1019 condition A. RHA testing of the active elements covered on this SMD are tested in alternate packages (TO3) and (TO39), not the packages as specified in paragraph 1.2.4. 4/ The active elements that make up the devices on this
21、 drawing have been tested for Enhanced Low Dose Rate Sensitivity (ELDRS) in accordance with MIL-STD-883, Method 1019 condition D for initial qualification. No ELDRS effect was observed. The devices will be re-tested after design or process changes that can affect RHA response of these devices. RHA t
22、esting of the active elements covered on this SMD were done in alternate packages (TO3) and (TO39), not the packages as specified in paragraph 1.2.4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09206 DLA
23、LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of St
24、andard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precede
25、nce. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requireme
26、nts. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated
27、 for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form
28、, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herei
29、n and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Maximum power dissipation verses case temperature chart. The maximum power dissipation verses case temperature is sp
30、ecified on figure 4. 3.2.5 Radiation exposure circuits. The radiation exposure circuits shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless o
31、therwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests
32、 for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the genera
33、l performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of a
34、ll parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime -VA) upon request. Provided by IHSNot for ResaleNo reproduction o
35、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09206 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order
36、 to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime -VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL
37、-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09206 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SH
38、EET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55 C TC+125 C VIN-VOUT= 5 V, IOUT= 0.5 A, P PMAX unless otherwise specified Group A subgroups Device types Limits Unit Min Max POSITIVE REGULATOR Reference voltage 1/ VREF3 V (VIN- VOUT) VDIFFMax, 10
39、 mA IOUT IMAX 1,2,3 01 1.20 1.30 V Line regulation 1/ 2/ DVOUT DVIN 3 V (VIN- VOUT) VDIFFMax, IOUT= 10 mA 1,2,3 01 0.06 %/V Load regulation 1/ 2/ DVOUT DIOUT 10 mA IOUT IMAX, VOUT 5 V 1,2,3 01 60 mV 10 mA IOUT IMAX, VOUT 5 V 1.2 % Thermal regulation 3/ IOUT= 1.5 A, (VIN- VOUT) = 13.3 V, 20 ms pulse,
40、 20 W, TC= +25 C 1 01 0.07 %/W Ripple rejection 3/ VOUT= 10 V, f = 120 Hz, CADJ= 10 mf 1,2,3 01 66 dB Adjustment pin current 1/ IADJ1,2,3 01 100 mA Adjustment pin current change 1/ DIADJ10 mA IOUT IMAX3.0 V (VIN- VOUT) 40 V1,2,3 01 5 mA Minimum load current 1/ 3/ IMIN(VIN- VOUT) = 40 V 1,2,3 01 5 mA
41、 Current limit 1/ IMAX(VIN- VOUT) 15 V, TC= +25 C 1 01 1.5 A (VIN- VOUT) = 40 V, TC= +25 C 1 0.30 Long term stability 3/ DVOUT DTIME TA= +125 C 2 01 1 % Thermal resistance, 3/ junction-to-case qJC1,2,3 01 3 C/W See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking
42、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09206 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55 C TC+125 C VIN-VOUT= 5 V, IOU
43、T= 0.5 A, P PMAX unless otherwise specified Group A subgroups Device types Limits Unit Min Max NEGATIVE REGULATOR Reference voltage 1/ VREF-3 V (VIN- VOUT) VDIFFMax, 10 mA IOUT IMAX 1,2,3 02 -1.200 -1.300 V Line regulation 1/ 2/ DVOUT DVIN -3 V (VIN- VOUT) -30 V, IOUT= 10 mA 1,2,3 02 0.05 %/V Load r
44、egulation 1/ 2/ DVOUT DIOUT 10 mA IOUT IMAX, VOUT 5 V 1,2,3 02 50 mV 10 mA IOUT IMAX, VOUT 5 V 02 1.0 % Thermal regulation 3/ IOUT= 1.5 A, (VIN- VOUT) = -13.3 V, 20 ms pulse, 20 W, TC= +25 C 1 02 0.02 %/W Ripple rejection 3/ VOUT= -10 V, f = 120 Hz, CADJ= 10 mf 1,2,3 02 66 dB Adjustment pin current
45、1/ IADJ1,2,3 02 100 mA Adjustment pin current change 2/ DIADJ10 mA IOUT IMAX, -3 V (VIN- VOUT) -30 V 1,2,3 02 5 mA Minimum load current 3/ IMIN(VIN- VOUT) = -30 V 1,2,3 02 5 mA (VIN- VOUT) -10 V 02 3 Current limit 1/ IMAX(VIN- VOUT) -15 V, 1,2,3 02 1.5 A (VIN- VOUT) = -30 V, TC= +25 C 1 02 0.24 Long
46、 term stability 3/ DVOUT DTIME TA= +125 C 2 02 1 % Thermal resistance, 3/ junction-to-case qJC1,2,3 02 3 C/W See footnotes at top of next page. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09206 DLA LAND A
47、ND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. 1/ The active elments that make up these devices have been tested to the requirements of RHA designator level “R“ (100 krads(Si) of Method 1019, condition
48、 A of MIL-STD-883 and low dose rate tested to the requirements of Method 1019, condition D of MIL-STD-883 to 50 krads(Si) at +25C for these parameters. No ELDRS effect was observed. The devices will be re-tested after design or process changes that can affect RHA response of these devices. RHA testing of the active elements covered on this SMD were done in alternate packages (TO3) and
