1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Paragraph 1.3: Remove Power dissipation and Output power. Table IA: Remove footnote 11/ reference from “Start up delay” test. Table IA: Remove duplicate footnote 4/ reference from “VOUTStep Line Transient” test. Figure 1 case outline X: Add glass
2、 seal (b2) to figure, add b2 to dimension table, correct A and b1 values in dimension table. Remove Figure 3 “Radiation exposure circuits”. -gc 13-11-18 Charles F. Saffle REV SHEET REV A A SHEET 15 16 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/
3、A PREPARED BY Greg Cecil DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, LINEAR, DUAL CHANNEL, DC-DC CONVERT
4、ER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 11-10-25 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-11216 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E027-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR
5、CUIT DRAWING SIZE A 5962-11216 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which a
6、re available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 P 11216 01 K X A Federal RHA Device Device Case Lead stock class designa
7、tor type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA de
8、signator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 SVSA2805D DC-DC Converter, 5 W, 5 V Outputs 02 SVSA2812D DC-DC Converter, 6 W, 12 V Outputs 03 SVSA2815D DC-DC Converter,
9、 6 W, 15 V Outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Clas
10、s G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space
11、high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test
12、) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition
13、 document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot f
14、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11216 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 an
15、d as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Dual-in-line 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input Voltage (Continuous) . +50 V dc Input Voltage (Transient, 1 second) +80 V dc Jun
16、ction Temperature Rise to Case . +10 C Storage Temperature -65 C to +150 C Lead Solder Temperature (10 seconds) . +270 C 1.4 Recommended operating conditions. Input Voltage Range +15 V dc to +50 V dc Case Operating Temperature Range (TC) . -55 C to +125 C 1.5 Radiation features. Maximum total dose a
17、vailable (dose rate = 30 - 300 rad(Si)/s) . 30 krad (Si) 3/ Maximum total dose available (dose rate 10 mrad(Si)/s) LDR: Components: 30 krad (Si) 3/ 4/ Hybrid: 5/ Single event phenomenon (SEP) effective linear energy threshold (LET): SEL, SEB, SEGR, SEFI . 44 MeV-cm2/mg 2/ 6/ 2. APPLICABLE DOCUMENTS
18、2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE S
19、PECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Sta
20、ndard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Single event performance
21、 is tested with minor transients only; no dropouts, shutdowns, latch up or burn out. 3/ Bipolar device types may degrade from displacement damage from radiation which could affect RHA levels. These device types have not been characterized for displacement damage. 4/ Components: The bipolar, BiCMOS l
22、inear and mixed signal semiconductor components have been tested to High Dose Rate (HDR) Condition C (30-300 rad(Si)/s) and Low Dose Rate (LDR) per condition D of MIL-STD-883, method 1019. The difference between HDR and LDR test results has been compared to determine if the semiconductors exhibit EL
23、DRS effect. Low dose rate sensitivity was not demonstrated. 5/ Hybrid: Hybrid devices have been tested at HDR. LDR testing on the device has not been completed. 6/ See table IB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DR
24、AWING SIZE A 5962-11216 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online
25、 at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIA
26、LS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes pr
27、ecedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. C
28、ompliance with MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the pe
29、rformance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, cons
30、truction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circ
31、uits. The radiation exposure circuits shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performa
32、nce characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Mar
33、king of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the m
34、anufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which
35、, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer
36、in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required
37、 in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11216 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEV
38、EL A SHEET 5 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or fun
39、ction as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revisio
40、n level control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA
41、as specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. c. PIND testing, method 2020
42、, condition A, of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11216 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical perform
43、ance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output Voltage +VOUT+IOUT, -IOUT= 0.5 A 1 01 4.95 5.05 V dc 2,3 4.925 5.075 1,2,3 7/ 4.89 5.10 +IOUT, -IOUT= 0.25 A 1 02
44、 11.88 12.12 2,3 11.82 12.18 1,2,3 7/ 11.66 12.3 +IOUT, -IOUT= 0.20 A 1 03 14.85 15.15 2,3 14.775 15.225 1,2,3 7/ 14.565 15.4 -VOUT+IOUT, -IOUT= 0.5 A 1 01 -4.8 -5.2 2,3 -4.75 -5.25 1,2,3 7/ -4.715 -5.275 +IOUT, -IOUT= 0.25 A 1 02 -11.8 -12.2 2,3 -11.52 -12.48 1,2,3 7/ -11.36 -12.6 +IOUT, -IOUT= 0.2
45、0 A 1 03 -14.8 -15.2 2,3 -14.4 -15.6 1,2,3 7/ -14.19 -15.775 Output Current 8/ 9/ IOUTVOUTVIN= 15 V dc to 50 V dc 1,2,3 01 0.7 A 02 0.35 03 0.93 VOUTRipple Voltage VRIP VOUTBW = 20 Hz to 10 MHz 1,2,3 All 50 mVp-p 01 100 02,03 80 VOUTLine Regulation VRLINE+VOUTVIN= 16 V dc to 40 V dc 1,2,3 All 20 mV
46、-VOUTVIN= 16 V dc to 40 V dc 200 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11216 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 AP
47、R 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max VOUTLoad Regulation VRLOAD+VOUTNo Load to Full Load 1,2,3 All 50 mV -VOUTNo
48、 Load to Full Load 200 -VOUTCross Regulation -VRCRS+Load 70%, -Load 30% +Load 30%, -Load 70% 1,2,3 All 450 mV Input Current IINIOUT= 0, Inhibit (pin 5) = 0 1,2,3 All 6 mA IOUT= 0, Inhibit (pin 5) = open 60 IINRipple Current IRIPBW = 20 Hz to 10 MHz 1,2,3 All 50 mAp-p 1,2,3 7/ 100 Efficiency Eff +IOUT, -IOUT= 0.5 A 1,2,3 01 66 % +IOUT, -IOUT= 0.25 A 02 72 +IOUT, -IOUT= 0.20 A 03 73 Isolation ISO 500 V dc, TC= +25C 1 All 100 M Capacitive Load 10/ CLVOUTNo effect on DC per
