1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R106-92. 92-01-09 M. A. FRYE B Add RHA requirements. Add device type 02. Add case outlines E and F. Update boilerplate. rrp 98-10-09 R. MONNIN C Make changes to 1.5, RHA designators in table I, and table IIA. r
2、rp 99-07-30 R. MONNIN D Make change to full range current test as specified in table I. Add new footnote to 1.5 and table I. - ro 00-12-22 R. MONNIN E Make correction to the tPLHand tPHLtests conditions column as specified under Table I. Make correction to figure 2. Delete 4.4.4.1.1, Accelerated agi
3、ng test. - ro 06-06-19 R. MONNIN F Make change to Nonlinearity max limit in table I for device type 02. Update to latest Boilerplate. - jt 11-08-09 C. SAFFLE G Add device type 03 tested at low dose rate. Make change to paragraphs 1.2.2, 1.5, and 3.2.3. Make changes to footnotes 1/ and 2/ as specifie
4、d under Table I. Removed figure 2. Make change to Table IIB and paragraph 4.4.4.1. -rrp 12-05-03 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OF
5、FICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, DIGITAL-LINEAR,
6、8-BIT, HIGH SPEED, MULTIPLYING D/A CONVERTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 90-09-07 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-89932 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E319-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,
7、-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89932 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicatio
8、n (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device c
9、lasses M and Q: 5962 - 89932 01 2 A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 89932 01 V 2 A Federal stock class designator RHA designator (see 1.2.1) Device type (s
10、ee 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked
11、devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 DAC08 8-bit, hi
12、gh-speed, multiplying D/A converter 02 DAC08A Radiation hardened, 8-bit, high-speed, multiplying D/A converter 03 DAC08A Radiation hardened, 8-bit, high-speed, multiplying D/A converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance le
13、vel as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to th
14、e requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D
15、RAWING SIZE A 5962-89932 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16
16、16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (V+ to V-)
17、 36 V dc Logic inputs . V- to (V- plus 36 V dc) Logic control voltage (VLC) V- to V+ Analog current outputs (at V- = 15 V) 4.25 mA Reference input (VREF+to VREF-) V- to V+ Reference input differential voltage (VREF+to VREF-) 18 V dc Reference input current (IVREF+) 5.0 mA Power dissipation (PD): Cas
18、es E, F, and 2 500 mW Maximum junction temperature (TJ) +150C Lead temperature (soldering, 60 seconds) +300C Storage temperature -65C to +125C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case E . 91C/W Case F . 120C/W Case 2 110C/W 1.4 Rec
19、ommended operating conditions. Supply voltage (VS) 15 V dc Input reference current (IREF) . 2.0 mA Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features: Device types 01 and 02: Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads(Si) 2/ Device type 03:
20、Maximum total dose available (dose rate 10 mrads(Si)/s) 50 krads(Si) 3/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Device types 01 and 02 may be dose rate sensitiv
21、e in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ For device type 03, radiation end point limits for the noted parameters are g
22、uaranteed only for the conditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89932 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHE
23、ET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in th
24、e solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPAR
25、TMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
26、 Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption ha
27、s been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not aff
28、ect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and ph
29、ysical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as
30、 specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post
31、irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requir
32、ements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number
33、 is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M s
34、hall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89932 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 TABLE
35、 I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V, IREF= 2 mA Group A subgroups Device type Limits Unit unless otherwise specified Min Max Power supply 3/ I+ VS= 15 V or +5 V, -15 V 1, 2, 3 All 3.8 mA M,D,P,L,R 1 01, 02 4 M,D,P,L 1 03 4 VS= 5 V, IREF= 1
36、mA 1, 2, 3 All 3.8 M,D,P,L,R 1 01, 02 4 M,D,P,L 1 03 4 I- VS= 15 V or +5 V, -15 V 1, 2, 3 All -7.8 mA M,D,P,L,R 1 01, 02 -8 M,D,P,L 1 03 -8 VS= 5 V, IREF= 1 mA 1, 2, 3 All -5.8 M,D,P,L,R 1 01, 02 -8 M,D,P,L 1 03 -8 Full range current IFRVREF= 10 V, VREF+, VREF-= 5 k 1, 2, 3 01 1.94 2.04 mA M,D,P,L,R
37、 1 1.925 2.04 VREF= 10 V, 1 02, 03 1.984 2 VREF+, VREF-= 5 k 2, 3 1.94 2.04 M,D,P,L,R 1 02 1.97 2 M,D,P,L 1 03 1.97 2 Output voltage compliance VOCFull range current change LSB 4/ 1, 2, 3 All -10 +18 V Zero scale current IZS1, 2, 3 01 2 A M,D,P,L,R 1 2 1, 2, 3 02, 03 1 M,D,P,L,R 1 02 1 M,D,P,L 1 03
38、1 Full range symmetry IFRS_ IFR- IFR4/ 1, 2, 3 01 8 A 02, 03 4 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89932 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEV
39、EL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V, IREF= 2 mA Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output current range IOR1VREF= 15 V, V- = -10 V, VREF+, VREF-=
40、5 k 4/ 1, 2, 3 All 2.1 mA IOR2VREF= 25 V, V- = -12 V, VREF+, VREF-= 5 k 4/ 4.2 Power supply sensitivity PSSIFS+V+ = 4.5 V to 18 V, 4/ V- = -18 V, IREF= 1 mA 1, 2, 3 All 0.01 %IO_ %V+ PSSIFS-V- = -4.5 V to -18 V, 4/ V+ = 18 V, IREF= 1 mA 0.01 Reference bias current IVREF-4/ 1, 2, 3 All 0 -3 A Logic i
41、nput levels VILLogic “0”, VLC= 0 V 1, 2, 3 All 0.8 V M,D,P,L,R 1 01, 02 0.8 M,D,P,L 1 03 0.8 VIHLogic “1”, VLC= 0 V 1, 2, 3 All 2 M,D,P,L,R 1 01, 02 2 M,D,P,L 1 03 2 Logic input current (each bit) IILVIN= -10 V, VLC= 0 V 1, 2, 3 All -10 A M,D,P,L,R 1 01, 02 -30 M,D,P,L 1 03 -30 IIHVIN= 18 V, VLC= 0
42、V 1, 2, 3 All 10 M,D,P,L,R 1 01, 02 10 M,D,P,L 1 03 10 Logic input swing VISIFR= 1.94 mA (minimum), IFR= 2.04 mA (maximum) 4/ 1, 2, 3 All -10 +18 V Monotonicity 4/ 1, 2, 3 All 8 Bits Nonlinearity NL 1, 2, 3 01 0.19 %FS M,D,P,L,R 1 0.45 1, 2, 3 02, 03 0.11 M,D,P,L,R 1 02 0.35 M,D,P,L 1 03 0.35 See fo
43、otnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89932 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance ch
44、aracteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V, IREF= 2 mA Group A subgroups Device type Limits Unit unless otherwise specified Min Max Power dissipation 5/ PDVS= 5 V, IREF= 1 mA 4/ 1, 2, 3 All 48 mW VS= +5 V, -15 V, 4/ IREF= 2 mA 136 VS= 15 V, IREF= 2 mA 4/ 174 Full
45、scale tempco TCIFS4/ 8 All 80 ppm/C Settling time tsTo 1/2 LSB, TA= +25C 4/ 9 01 150 ns 02, 03 135 Reference input slew rate dl/dt REQ= 200 , CC= 0 pF, RL= 100 , TA= +25C 4/ 9 All 4 mA/s Propagation delay all bits switched tPLHLow to high transition, 4/ VL= 0.7 V, f = 250 kHz 9, 10, 11 All 60 ns tPH
46、LHigh to low transition, 4/ VL= 2.7 V, f = 250 kHz 60 1/ Device types 01 and 02 supplied to this drawing have been characterized through all levels P, L, and R of irradiation. Device type 03 supplied to this drawing has been characterized at level L of irradiation. However, device types 01 and 02 ar
47、e only tested at the “R” level and device type 03 is only tested at the “L” level. Pre and Post irradiation values are identical unless otherwise specified in table I. 2/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radi
48、ation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A for device types 01 and 02 and condition D for device type 03. Device type 03 has been tested at low dose rate. 3/ When the device is used in an un-biased state at high temperature only, and subsequently biased, t
