1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 05. Add case outline Z. Update boilerplate. Editorial changes throughout. 95-06-20 M. A. Frye B Update drawing to reflect current MIL-PRF-38535 requirements. - glg 13-03-26 Charles Saffle REV SHEET REV B B B B B B B B B B SHEET 15
2、 16 17 18 19 20 21 22 23 24 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil THIS DRAWI
3、NG IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 1 STATIC RANDOM ACCESS MEMORY (SRAM), SEPARATE I/O, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-08-31 AMSC N/A REVISION LEVEL B SIZE A CAGE COD
4、E 67268 5962-93128 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E316-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93128 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 223
5、4 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).
6、When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93128 01 Q X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2
7、.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RH
8、A levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 256K X 1 CMOS SRAM (CMOS I/O) 60 ns 02 256K X 1 CMOS SR
9、AM (TTL I/O) 60 ns 03 256K X 1 CMOS SRAM (CMOS I/O) 40 ns 04 256K X 1 CMOS SRAM (TTL I/O) 40 ns 05 256K X 1 CMOS SRAM (TTL I/O) 50 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements doc
10、umentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835
11、and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 36 flat pack Y See figure 1 40 flat pack Z See figure 1 36 flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device cla
12、ss M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in MIL-HDBK-103 (see 6.6.2 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCI
13、RCUIT DRAWING SIZE A 5962-93128 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range (VCC) - -2.0 V dc to +7.0 V dc DC input voltage range (VIN) - -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOU
14、T) - -0.5 V dc to VCC+0.5 V dc Output voltage applied to high Z state - -0.5 V dc to VCC+0.5 V dc Storage temperature range - -65C to +150C Lead temperature (soldering, 5 seconds) - +250C Thermal resistance, junction-to-case (JC): Cases X and Y - 3.31C/W Maximum power dissipation (PD) - 2.0 W Juncti
15、on temperature (TJ) - +175C 4/ 1.4 Recommended operating conditions. Supply voltage range (VCC) - 4.5 V dc to 5.5 V dc Supply voltage (VSS) - 0.0 V High level (CMOS) input voltage range (VIH) - 3.5 V dc to VCC+0.3 V dc High level (TTL) input voltage range (VIH) - 2.2 V dc to VCC+0.5 V dc Low level (
16、CMOS) input voltage range (VIL) - -0.3 V dc to +1.5 V dc Low level (TTL) input voltage range (VIL) - -0.5 V dc to +0.8 V dc Case operating temperature range (TC) - -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, an
17、d handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPART
18、MENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these doc
19、uments are available online at http:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum
20、 levels may degrade performance and affect reliability. 3/ All voltages referenced to VSS(VSS= ground), unless otherwise specified. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Pr
21、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93128 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following documents form
22、 a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Ph
23、enomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) JEDEC INTERNATIONAL (JEDEC) JESD 78 - IC Latch
24、-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. Th
25、ese documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes
26、 applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Mana
27、gement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construc
28、tion, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and
29、figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision lev
30、el control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as spec
31、ified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with
32、 the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA
33、 designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ o
34、r “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93128 DLA LAND AND MARITIME
35、COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device
36、 class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing
37、shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q a
38、nd V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) invol
39、ving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and a
40、pplicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. V
41、ERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as de
42、scribed herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology co
43、nformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical
44、 parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity up
45、on request. For device class M, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein). c. Interim and
46、 final electrical parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-P
47、RF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final e
