DLA SMD-5962-93139 REV A-2009 MICROCIRCUIT LINEAR PREDRIVER MOSFET MONOLITHIC SILICON.pdf

上传人:twoload295 文档编号:700326 上传时间:2019-01-01 格式:PDF 页数:11 大小:102.62KB
下载 相关 举报
DLA SMD-5962-93139 REV A-2009 MICROCIRCUIT LINEAR PREDRIVER MOSFET MONOLITHIC SILICON.pdf_第1页
第1页 / 共11页
DLA SMD-5962-93139 REV A-2009 MICROCIRCUIT LINEAR PREDRIVER MOSFET MONOLITHIC SILICON.pdf_第2页
第2页 / 共11页
DLA SMD-5962-93139 REV A-2009 MICROCIRCUIT LINEAR PREDRIVER MOSFET MONOLITHIC SILICON.pdf_第3页
第3页 / 共11页
DLA SMD-5962-93139 REV A-2009 MICROCIRCUIT LINEAR PREDRIVER MOSFET MONOLITHIC SILICON.pdf_第4页
第4页 / 共11页
DLA SMD-5962-93139 REV A-2009 MICROCIRCUIT LINEAR PREDRIVER MOSFET MONOLITHIC SILICON.pdf_第5页
第5页 / 共11页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. drw 09-07-07 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHI

2、O 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, PREDRIVER, MOSFET, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-0

3、4-13 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93139 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E351-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93139 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

4、 OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and

5、are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93139 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (se

6、e 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked dev

7、ices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 MIC5011 Power MOSFET p

8、redriver 02 MIC5012 Dual power MOSFET predriver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant,

9、non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CD

10、IP2-T8 8 Dual-in-line C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

11、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93139 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (V+) -0.5 V dc to +36 V dc Input voltage range (VIN) -10 V dc to V+ Source voltage range

12、(VS) -10 V dc to V+ Source current (IS) . 50 mA Gate voltage range -1 V dc to +50 V dc Junction temperature (TJ) . +150C Power dissipation (PD): Device type 01 1.25 W Device type 02 1.56 W Thermal resistance, junction-to-ambient (JA): Device type 01 125C/W Device type 02 105C/W Storage temperature r

13、ange -65C to +150C Lead temperature (soldering, 10 seconds) . +260C 1.4 Recommended operating conditions. Supply voltage range (V+) 4.75 V dc to 32 V dc Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The followin

14、g specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, Gen

15、eral Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit

16、Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and

17、 the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended ope

18、ration at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93139 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHE

19、ET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan sha

20、ll not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, constructi

21、on, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections s

22、hall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient oper

23、ating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufactu

24、rers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device cla

25、sses Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark f

26、or device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For devi

27、ce class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm th

28、at the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF

29、-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this dr

30、awing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be

31、made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 77 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted wi

32、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93139 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C Group A subgroups Device type Limits

33、 Unit V+ = 15 V, all switches open unless otherwise specified Min Max Supply current 1/ I+ V+ = 32 V, S2closed, see figure 2 VIN= 0 V, VS= 0 V 1, 2, 3 All 0.01 mA IN= VS= 32 V 20 Logic input voltage threshold VTHV+ = 4.75 V adjust VINfor VGATElow 1, 2, 3 All 2 V adjust VINfor VGATEhigh 4.5 V+ = 15 V

34、, adjust VINfor VGATEhigh 5 Logic input current IINV+ = 32 V VIN= 0 V 1, 2, 3 All -1 A IN= 32 V +1 Gate drive VGATES1closed, S2closed, VS= V+, see figure 2 V+ = 4.75 V, IGATE= 0 A, VIN= 4.5 V 1, 2, 3 All 7 V V+ = 15 V, IGATE= 100 A, VIN= 5 V 24 Zener clamp voltage VZS2closed, VIN= 5 V, see figure 2

35、V+ = 15V, VS= 15 V 1, 2, 3 All 11 15 V V+ = 32V, VS= 32 V 11 16 Gate turn-on time tONVINswitched from 0 V to 5 V measure time for VGATEto reach 20 V 9, 10, 11 01 50 s 02 200 As above, with C1 and C2 removed 2/ (pins 6, 7, and 8 open) 01 200 Gate turn-off time tOFFVINswitched from 5 V to 0 V measure

36、time for VGATEto reach 1 V 9, 10, 11 All 10 s 1/ For device type 02, the parameter test limit is for each individual predriver. 2/ For device type 01, pins 6(C2), 7(com), and 8(C1) are available for optional external 1 nF capacitors. Provided by IHSNot for ResaleNo reproduction or networking permitt

37、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93139 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device types 01 02 Case outlines P C Terminal number Terminal symbol 1 V+ NC 2 Input Source A 3 Source GND 4 GND Gat

38、e A 5 Gate Source B 6 C2 Gate B 7 Com NC 8 C1 NC 9 - - - NC 10 - - - V+ B 11 - - - In B 12 - - - V+ A 13 - - - NC 14 - - - In A NC = No connection. FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

39、DRAWING SIZE A 5962-93139 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 FIGURE 2. Test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93139

40、DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Qua

41、lity Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in a

42、ccordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1

43、 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The t

44、est circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional crite

45、ria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control o

46、f the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent s

47、pecified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for

48、device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1