1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R145-97. 96-11-27 Raymond Monnin B Add note 4/ to tWLQZ, tCDR, and tRin table I. Add note 5/ to tELQX, tWHQX, tOLQX, and tOHQZin table I. Add case outline 8. Change
2、dimensions b, c, L, and Q for case outline T. Add CAGE 01295 as source of supply for case outlines T and 8. Update boilerplate. Editorial changes throughout. 97-04-17 Raymond Monnin C Change minimum dimensions A, b, and E for case outline U. Add CAGE 65786 as a source of supply . Editorial changes t
3、hroughout. - ksr 97-10-24 Raymond Monnin D Change case outline 9 dimension A from .114 inches to .130 inches. - glg 00-03-01 Raymond Monnin E Added low-power devices 09 - 14 to drawing. Removed CAGE 0EU86 for devices 05 - 08. - glg 00-11-22 Raymond Monnin F Changed minimum dimension b for package “U
4、“ from 0.015 inches to 0.012 inches. - glg 00-12-13 Raymond Monnin G Changed minimum dimension b for package “M“ from 0.019 inches to 0.012 inches. Updated boilerplate paragraphs. ksr 02-02-12 Raymond Monnin H Table I; Changed the IOLfrom 8 mA to 6 mA VOLtest. Added device types 15 and 16. Editorial
5、 changes throughout. -sld 04-05-25 Raymond Monnin J Add case outline 7. Add CAGE 0EU86 as source of supply for case outline 7. Editorial changes throughout. tcr 08-08-18 Robert M. Heber K Add device 17 and add case outline 6. Add CAGE 6S055 as source of supply for case outline 6. Some editorial chan
6、ges. ksr 09-01-22 Robert M. Heber REV SHEET REV K K K K K K K K K K K K K K K K K K SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling STANDARD MICROCIRCUIT DRAWING
7、CHECKED BY Jeff Bowling DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS APPROVED BY Michael. A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-03-05 MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 51
8、2K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON AMSC N/A REVISION LEVEL K SIZE A CAGE CODE 67268 5962-95600 SHEET 1 OF 32 DSCC FORM 2233 APR 97 5962-E130-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95600 STANDARD MICR
9、OCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A cho
10、ice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 5962 - 95600 01 M X A Federal stock class designator RHA designator (see 1.2.1) Devicetype (
11、see 1.2.2)Deviceclass designatorCaseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked dev
12、ices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device types identify the circuit function as follows: Device type Generic number 1/ Circuit function Data retention Acces
13、s time 01 512K X 8 CMOS SRAM No 45 ns 02 512K X 8 CMOS SRAM No 35 ns 03 512K X 8 CMOS SRAM No 25 ns 04 512K X 8 CMOS SRAM No 20 ns 05 512K X 8 CMOS SRAM Yes 45 ns 06 512K X 8 CMOS SRAM Yes 35 ns 07 512K X 8 CMOS SRAM Yes 25 ns 08 512K X 8 CMOS SRAM Yes 20 ns 09 512K X 8 CMOS Low Power SRAM Yes 45 ns
14、 10 512K X 8 CMOS Low Power SRAM Yes 35 ns 11 512K X 8 CMOS Low Power SRAM Yes 25 ns 12 512K X 8 CMOS Low Power SRAM Yes 20 ns 13 512K X 8 CMOS Low Power SRAM Yes 15 ns 14 512K X 8 CMOS SRAM No 15 ns 15 512K X 8 CMOS SRAM Yes 12 ns 16 512K X 8 CMOS SRAM No 12 ns 17 512K X 8 CMOS SRAM Yes 12 ns 1.2.3
15、 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance wit
16、h MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in MIL-HDBK-103 and QML-38535, as applicable (see 6.6.1 and 6.6.2 herein
17、). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95600 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as d
18、esignated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y See figure 1 32 TSOP package Z See figure 1 32 Leadless chip carrier U See figure 1 32 SOJ package T See figure 1 36 Flat pack M See figure 1 36 SOJ pack
19、age N See figure 1 36 Leadless chip carrier 9 See figure 1 32 Flat pack 8 See figure 1 36 SOJ package 7 See figure 1 36 SOJ package 6 See figure 1 44 TSOP package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device cl
20、ass M. 1.3 Absolute maximum ratings. 2/ Voltage on any input relative to VSS-0.5 V dc to +7.0 V dc For device 17 only -0.5 V dc to +6.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) 2.0 W Lead temperature (soldering, 10 seconds). +260C Thermal resistance, junction-to-ca
21、se (JC): Case X See MIL-STD-1835 Case Y 6C/W Cases U, M, 8 and 7. 11C/W Case T 10C/W Cases Z and N 20C/W Case 9 22C/W Case 6 7 C/W Junction temperature (TJ). +150C 2/ For - 17 +140C 2/ Output current. 40 mA 1.4 Recommended operating conditions. Supply voltage range (VCC). 4.5 V dc to 5.5 V dc Supply
22、 voltage (VSS) . 0 V Input high voltage range (VIH) Devices 01 - 08. 2.2 V dc to +6.0 V dc Input high voltage range (VIH) Devices 09 - 13. 2.2 V dc to VCC+ 0.3 V dc Input high voltage range (VIH) Device 17 2.0 V dc to VCC+ 0.5 V dc Input low voltage range (VIL). -0.5 V dc to +0.8 V dc 3/ Case operat
23、ing temperature range (TC) . -55C to +125C _ 2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 3/ VILminimum = -3.0 V dc for pulse width less than 20 ns. Provided by IHSNot for ResaleN
24、o reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95600 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks.
25、The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufa
26、cturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard M
27、icrocircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of th
28、is document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phenomena Induc
29、ed by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org/.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD
30、78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org/.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute
31、the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, ho
32、wever, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufactu
33、rers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Pro
34、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95600 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. Th
35、e design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connec
36、tions. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns cannot be implemented due to test equ
37、ipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For
38、device classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirr
39、adiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements
40、 shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is no
41、t feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall b
42、e in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate
43、 of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to
44、be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PR
45、F-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot
46、of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review fo
47、r device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment f
48、or device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection proc
