DLA SMD-5962-95801 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS HEX INVERTER WITH OPEN DRAIN MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 明渠六角硅单片电路线型微电路》.pdf

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1、 REVISIONS A Changes in accordance with NOR 5962-R124-98 - thl. 98-06-12 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 04-05-07 Thomas M. Hess REV SHET REV B B B B B SHEET 15 16 17 18 19 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SH

2、EET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCI

3、ES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-31 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, HEX INVERTER WITH OPEN DRAIN, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95801 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E128-04 DISTRIBUTION STATEM

4、ENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95801 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM

5、 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PI

6、N). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95801 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) des

7、ignator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specifie

8、d RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS05 Radiation hardened, SOS, high speed CMOS, hex inverter with

9、open drain 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits i

10、n accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat

11、 pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95801 DEFE

12、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT). -0.5 V dc to VCC+ 0.5 V

13、 dc DC input current, any one input (IIN) 10 mA DC output current, any one output (IOUT). 25 mA Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline C. 24C/W Case outline X . 30C/W Thermal resistance, j

14、unction-to-ambient (JA): Case outline C. 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C. 0.68 W Case outline X . 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc

15、Input voltage range (VIN) +0.0 V to VCCOutput voltage range (VOUT) +0.0 V to VCCMaximum low level input voltage (VIL) . 30% of VCCMinimum high level input voltage (VIH) 70% of VCCCase operating temperature range (TC) -55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf). 500 ns Radia

16、tion features: Total dose . 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse). 1 x 1010Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability. 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the

17、absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specif

18、ied VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C. 13.5 mW/C Case outline X. 8.8 mW/C 5/ Guaranteed by

19、 design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95801 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE D

20、OCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Inde

21、x of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1

22、835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the

23、 Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, sup

24、ersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quali

25、ty Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microci

26、rcuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and he

27、rein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2 3.2.4 Logic diagram. The logic diagra

28、m shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III herein. 3.3 Electrical performance char

29、acteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range.Provided by IHSNot for ResaleNo reproduction

30、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95801 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups spec

31、ified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not

32、feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

33、in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate o

34、f compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be

35、 listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-

36、38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of

37、 microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification a

38、nd review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group

39、assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95801 DE

40、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits 2/ Unit Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCC Group A subgroups Min Max For all inputs affec

41、ting output under test, VIN= 3.15 V or 1.35 V For all other inputs, VIN= VCCor GND All 1, 2, 3 0.1 IOL= 50 A M, D, P, L, R 3/ All 4.5 V 1 0.1 V For all inputs affecting output under test, VIN= 3.85 V or 1.65 V For all other inputs, VIN= VCCor GND All 1, 2, 3 0.1 Supply current VOLIOL= 50 A M, D, P,

42、L, R 3/ All 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs, VIN= VCCor GND All 2, 3 +5.0 Input current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 A 1 -0.5 For input under test, VIN= GND For all other inputs, VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L, R 3

43、/ All 5.5 V 1 -5.0 A 1 4.8 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs, VIN= VCCor GND All 2, 3 4.0 Output current low (Sink) IOL4/ VOUT= 0.4 V M, D, P, L, R 3/ All 4.5 V 1 4.0 mA 1 +1.0 For all inputs, VIN= VCCor GND VOUT= 5.5 V All 2, 3 +50.0 Three-state ou

44、tput leakage current IOZHM, D, P, L, R 3/ All 5.5 V 1 +50.0 A 1 10.0 VIN= VCCor GND All 2, 3 200.0 Quiescent supply current ICCM, D, P, L, R 3/ All 5.5 V 1 200.0 A Input capacitance CIN4 10 4 15 Power dissipation capacitance CPD5/ VIH= 5.0 V, VIL= 0.0 V f = 1 MHz See 4.4.1c All 5.0 V 5, 6 23 pF VIH=

45、 3.15 V, VIL= 1.35 V See 4.4.1b All 7, 8 L H Functional test 6/ M, D, P, L, R 3/ All 4.5 V 7 L H 9 2.0 18.0 CL= 50 pF RL= 500 All 10, 11 2.0 20.0 tPLZ7/ See figure 4 M, D, P, L, R 3/ All 4.5 V 9 2.0 20.0 ns 9 2.0 18.0 CL= 50 pF RL= 500 All 10, 11 2.0 20.0 Propagation delay time, An to Yn tPZL7/ See

46、figure 4 M, D, P, L, R 3/ All 4.5 V 2.0 20.0 ns 9 15.0 Ouput transition time tTHL8/ CL= 50 pF RL= 500 See figure 4 All 4.5 V 10, 11 22.0 ns See footnotes on next sheet. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

47、E A 5962-95801 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. 1/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests

48、in table I herein. Output terminals not designated shall be high level logic, low level logic, or open, except for the ICCtest, the output terminals shall be open. When performing the ICCtest, the current meter shall be placed in the circuit such that all current flows through the meter. 2/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein

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