1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R175-97. 97-02-24 Monica L. Poelking B Changes in accordance with NOR 5962-R407-97. 97-08-04 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t
2、hroughout. LTG 03-07-02 Thomas M. Hess REV SHET REV C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE
3、SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-01-04 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, LOW-POWER MONOSTABLE/ ASTABL
4、E MULTIVIBRATOR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96635 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E389-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted witho
5、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes
6、 Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the f
7、ollowing example: 5962 R 96635 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL
8、-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device ty
9、pe(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4047B Radiation hardened CMOS, low power monostable/astable multivibrator 02 4047BN Radiation hardened CMOS, low power monostable/astable multivibrator with neutron irradiation die 1.2.3 Device class desig
10、nator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, ap
11、pendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line package X CDFP3-F14 14 Flat package 1.2.5 Lead finis
12、h. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLU
13、MBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range .-0.5 V dc to VDD+ 0.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor .100
14、mW Storage temperature range (TSTG)-65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case C 24C/W Case X 30C/W Thermal resistance, junction-to-ambient JA): Case C 74C/W Case X 116C/W Junction temperature (TJ). +175C Maximum power dissipation at T
15、A= +125C (PD): 4/ Case C 0.68 W Case X 0.43 W 1.4 Recommended operating conditions. Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN) 0 V to VDDOutput voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Si
16、ngle event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose rate latch-up 2 x 108Rads(Si)/s 5/ Dose rate survivability 5 x 1011Rads(Si)/s 5/ Neutron irradiated . 1 x 1014neutrons/cm26/
17、 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
18、 of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to
19、 the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C t
20、o +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case C. 13.5 mW/C Case X. 8.6 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device type 02 only. Provid
21、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Metho
22、d Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, a
23、nd handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Not
24、hing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modifie
25、d in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and
26、 as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V
27、or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure
28、2. 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter
29、limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part sh
30、all be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device
31、. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark f
32、or device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAW
33、ING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requir
34、ements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approve
35、d source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformanc
36、e as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (se
37、e 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and ap
38、plicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provi
39、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits
40、 Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 1/ 1.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 30 1, 3 1/ 2.0 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 60 1, 3 1/ 2.0 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 120 1 2.0 VDD= 20 V, VIN= 0.0 V or VDDAll
41、2 200 M, D, P, L, R 2/ All 1 7.5 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 2.0 A 1 0.53 2 1/ 0.36 VDD= 5 V VO= 0.4 V VIN= 0.0 V or VDDAll 3 1/ 0.64 1 1.4 2 1/ 0.9 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDDAll 3 1/ 1.6 1 3.5 2 1/ 2.4 Low level output current (sink), Q, Q, OSC OUT IOLVDD= 15 V VO
42、= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 4.2 mA VDD= 5 V, VOUT= 0.4 V 1 0.78 VDD= 10 V, VOUT= 0.5 V 1 2.0 Low level output current (sink), pins 1 and 2 IOLVDD= 15 V, VOUT= 1.5 V All 1 5.2 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license
43、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Devic
44、e type Group A subgroups Min Max Units 1 -0.53 2 1/ -0.36 VDD= 5 V VO= 4.6 V VIN= 0.0 V or VDDAll 3 1/ -0.64 1 -1.8 2 1/ -1.15 VDD= 5 V VO= 2.5 V VIN= 0.0 V or VDDAll 3 1/ -2.0 1 -1.4 2 1/ -0.9 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 3 1/ -1.6 1 -3.5 2 1/ -2.4 High level output current (source), Q,
45、 Q, OSC OUT IOHVDD= 15 V VO= 13.5 V VIN= 0.0 V or VDDAll 3 1/ -4.2 mA VDD= 5 V, VOUT= 4.6 V 1 -0.78 VDD= 10 V, VOUT= 9.5 V 1 -2.0 High level output current (source), pins 1 and 2 IOHVDD= 15 V, VOUT= 13.5 V All 1 -5.2 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output volt
46、age, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 50 VDD= 10 V, no load 1/ 1, 2, 3 50 Output voltage, low VOLVDD= 15 V, no load All 1, 2, 3 50 mV See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
47、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96635 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device ty
48、pe Group A subgroups Min Max Units VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V 9 200 Transition time 4/ tTLH, tTHLVDD= 5.0 V, VIN= VDDor GND All 10, 11 270 ns VDD= 10 V 9 1/ 100 VDD= 15 V All 9 1/ 80 9 400 VDD= 5.0 V, VIN= VDDor GND All 10, 11 540 M, D, P, L, R 2/ All 9 540 ns VDD= 10 V 9 1/ 200 Propagation delay time, astable, astable to OSC 4/ tPLH1VDD= 15 V All 9 1/ 160 ns 9 700 VDD= 5.0 V, VIN= VDDor GND All 10, 11 945 M, D, P, L, R 2/ All 9 945 ns VDD= 10 V 9 1/ 350 Propagation delay ti
