ASTM F1262M-1995(2008) Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)《数字集成电路瞬态辐射破坏阈试验标准指南(米制单位)》.pdf
《ASTM F1262M-1995(2008) Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)《数字集成电路瞬态辐射破坏阈试验标准指南(米制单位)》.pdf》由会员分享,可在线阅读,更多相关《ASTM F1262M-1995(2008) Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)《数字集成电路瞬态辐射破坏阈试验标准指南(米制单位)》.pdf(5页珍藏版)》请在麦多课文档分享上搜索。
1、Designation: F 1262M 95 (Reapproved 2008)Standard Guide forTransient Radiation Upset Threshold Testing of DigitalIntegrated Circuits (Metric)1This standard is issued under the fixed designation F 1262M; the number immediately following the designation indicates the year oforiginal adoption or, in th
2、e case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide is to assist experimenters in measuring thetransient radiation upset thresh
3、old of silicon digital integratedcircuits exposed to pulses of ionizing radiation greater than 103Gy (Si)/s.1.2 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety
4、and health practices and determine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:2E 666 Practice for Calculating Absorbed Dose FromGamma or X RadiationE 668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for DeterminingAbs
5、orbed Dosein Radiation-Hardness Testing of Electronic DevicesF 867M Guide for Ionizing Radiation Effects (Total Dose)Testing of Semiconductor Devices Metric32.2 Military Standards:4Method 1019 in MIL-STD-883. Steady-State Total DoseIrradiation ProcedureMethod 1021 in MIL-STD-883. Dose Rate Threshold
6、 forUpset of Digital Microcircuits.3. Terminology3.1 Definitions:3.1.1 combinational logicA digital logic system with theproperty that its output state at a given time is solely deter-mined by the logic signals at its inputs at the same time (exceptfor small time delays caused by the propagation del
7、ay ofinternal logic elements).3.1.1.1 DiscussionCombinational circuits contain no in-ternal storage elements. Hence, the output signals are not afunction of any signals that occurred at past times. Examples ofcombinational circuits include gates, adders, multiplexers anddecoders.3.1.2 complex circui
8、t response mechanismsFor mediumscale integration (MSI) and higher devices it is useful to definethree different categories of devices in terms of their internaldesign and radiation response mechanisms.3.1.3 over-stressed deviceA device that has conductedmore than the manufacturers specified maximum
9、current, ordissipated more than the manufacturers specified maximumpower.3.1.3.1 DiscussionIn this case the DUT is considered tobe overstressed even if it still meets all of the manufacturersspecifications. Because of the overstress, the device should beevaluated before using it in any high reliabil
10、ity application.3.1.4 sequential logicA digital logic system with theproperty that its output state at a given time depends on thesequence and time relationship of logic signals that werepreviously applied to its inputs.3.1.4.1 DiscussionExamples of sequential logic circuitsinclude flip-flops, shift
11、 registers, counters, and arithmetic logicunits.3.1.5 state vectorA state vector completely specifies thelogic condition of all elements within a logic circuit.3.1.5.1 DiscussionFor combinational circuits, the statevector includes the logic signals that are applied to all inputs:for sequential circu
12、its, the state vector must also include thesequence and time relationship of all input signals. In thisguide the output states will also be considered part of the statevector definition. For example, an elementary 4-input NANDgate has 16 possible state vectors, 15 of which result in thesame output c
13、ondition (“1” state). A 4-bit counter has 16possible output conditions, but many more state vectors be-cause of its dependence on the dynamic relationship of variousinput signals.3.1.6 upset responseThe electrical response of a circuitwhen it is exposed to a pulse of transient ionizing radiation.1Th
14、is guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved June 15, 2008. Published July 2008. Originallyapproved in 1995. Last previous edition approved in 2002 as F 12
15、62M 95(2002).2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.3Withdrawn.4Available from Standardization Docum
16、ents Order Desk, Bldg. 4, Section D,700 Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.3.1.6.1 DiscussionTwo types of upset response can occur:(1) transient output error, for wh
17、ich the instantaneous outputvoltage of an operating digital circuit is greater than a predeterminedvalue (for a low output condition) or less than a predetermined value(for a high output condition), and the circuit spontaneously recovers toits pre-irradiation condition after the radiation pulse subs
18、ides. Thepredetermined values mentioned above are agreed to by all partiesparticipating in the test and should be included in the test plan.(2) stored logic state error, for which there is a change in the stateof one or more internal logic elements that does not recover spontane-ously after the radi
19、ation pulse. Because the radiation changes the statevector, the circuit spontaneously recovers to a different logic state. Thisdoes not imply the change will always be immediately observable on acircuit output. However, the circuit can be restored to its original statevector by re-initializing it af
20、terwards.3.1.6.2 DiscussionAlthough the term upset response isusually used to describe output voltage responses, somedevices, such as open collector gates, are better characterizedby measuring the output current. Upset response also includesthe transient currents that are induced in the power supply
21、 leads(sometimes very large) as well as the response of the deviceinputs, although in most applications the input response is notsignificant.4. Summary of Guide4.1 For transient radiation upset threshold tests, the transientoutput voltage and the condition of internal storage elements,or both, is me
22、asured at a succession of radiation levels todetermine the radiation level for which transient voltage orfunctional test errors first occur. An oscilloscope, digitalstorage oscilloscope, transient digitizer or similar instrument isused to measure the output transient voltage. Functional testsare mad
23、e immediately after irradiation to detect internalchanges in state induced by the radiation. The device is initiallybiased and set up in a predetermined condition. The testconditions are determined from topological analyses or bytesting the device in all possible logic state combinations.4.2 A numbe
24、r of factors are not defined in this guide andmust be agreed upon beforehand by the parties to the test.These factors are described in the test plan. As a minimum thetest plan must specify the following:(1) Pulse width, energy spectrum, and type of radiationsource,(2) Voltage and electrical loading
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