1、BSI Standards PublicationSemiconductor devicesPart 6: Discrete devices ThyristorsBS IEC 60747-6:2016National forewordThis British Standard is the UK implementation of IEC 60747-6:2016.It supersedes BS IEC 60747-6:2000 which is withdrawn.The UK participation in its preparation was entrusted to Techni
2、calCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards Instit
3、ution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 80434 2ICS 31.080.20Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 April 2016.Amendments/corr
4、igenda issued since publicationDate Text affectedBRITISH STANDARDBS IEC 60747-6:2016IEC 60747-6 Edition 3.0 2016-04 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Part 6: Discrete devices Thyristors Dispositifs semiconducteurs Partie 6: Dispositifs discrets Thyristors INTERNATIONA
5、L ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.20 ISBN 978-2-8322-3296-5 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from
6、 an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. BS IEC 60747-6:2016 2 IEC 60747-6:2016 IEC 2016 CONTENTS FOREWORD . 7 1 Scope 9 2 Normative references. 9 3 Terms and definitions 9 3.1 General . 9 3.2 Terms and definitions r
7、elated to ratings and characteristics: currents . 10 3.3 Terms and definitions related to ratings and characteristics: gate voltages and currents 11 3.4 Terms and definitions related to ratings and characteristics: power and energy dissipation . 12 3.4.1 General . 12 3.4.2 Instantaneous power during
8、 a cycle 12 3.4.3 Mean power dissipation 14 3.4.4 Energy dissipation 15 3.5 Terms and definitions related to ratings and characteristics: recovery times and other characteristics . 16 3.5.1 On-state 16 3.5.2 Recovery times 16 3.5.3 Times and rates of rise characterizing gate-controlled turn-on . 18
9、3.5.4 Times and rates of rise characterizing gate-controlled turn-off . 19 3.5.5 Recovered charges 22 3.6 Mechanical ratings 22 4 Letter symbols . 23 4.1 General . 23 4.2 Additional general subscripts . 23 4.3 List of letter symbols . 23 5 Ratings and characteristics for thyristors 26 5.1 Ratings (l
10、imiting values) 26 5.1.1 Storage temperatures (Tstg) . 26 5.1.2 Junction temperature (Tvj(min), Tvjm) . 26 5.1.3 Operating ambient or case temperature (Taor Tc) 26 5.1.4 Total power dissipation (Ptotor PC) 26 5.1.5 Gate power dissipation . 26 5.1.6 Frequency ratings 26 5.1.7 Special requirements for
11、 mounting . 26 5.1.8 Principle anode-cathode voltages . 27 5.1.9 Gate voltages 27 5.1.10 Principal anode cathode currents . 28 5.1.11 Peak forward gate current (IFGM) 35 5.2 Characteristics 35 5.2.1 General . 35 5.2.2 Reverse current (IR) 35 5.2.3 Reverse conducting voltage (VRC) (for reverse conduc
12、ting thyristors) . 35 5.2.4 Continuous (direct) off-state current (ID) 35 5.2.5 On-state voltage (VT) . 35 5.2.6 On-state characteristics (where appropriate) . 35 BS IEC 60747-6:2016IEC 60747-6:2016 IEC 2016 3 5.2.7 Peak sinusoidal on-state voltage (VTM) 36 5.2.8 Threshold voltage (VT(TO)/ VTO) 36 5
13、.2.9 On-state slope resistance (rT) 36 5.2.10 Holding current (IH) . 36 5.2.11 Latching current (IL) . 36 5.2.12 Repetitive peak off-state current (IDRM) . 36 5.2.13 Repetitive peak reverse current (IRRM) 36 5.2.14 Gate-trigger current (IGT) and gate-trigger voltage (VGT) . 37 5.2.15 Gate non-trigge
14、r current (IGD) and gate non-trigger voltage (VGD) . 37 5.2.16 Sustaining gate current (IFGsus) for GTO only . 38 5.2.17 Peak gate turn-off current (IRGQM) for GTO only . 38 5.2.18 Peak tail current (IZM) for GTO only . 38 5.2.19 Characteristic time intervals . 39 5.2.20 Total power dissipation 41 5
15、.2.21 Turn-on energy dissipation (EON) for GTO preferably . 42 5.2.22 On-state energy dissipation (ET) for GTO preferably . 42 5.2.23 Turn-off energy dissipation (EQ) for GTO preferably . 43 5.2.24 Recovered charge (Qr) (where appropriate) 43 5.2.25 Peak reverse recovery current (Irrm)(where appropr
16、iate) 43 5.2.26 Reverse recovery time (trr) (where appropriate) 43 5.2.27 Thermal resistance junction to ambient (Rth(j-a) 43 5.2.28 Thermal resistance junction to case (Rth(j-c) . 43 5.2.29 Thermal resistance case to heat sink (Rth(c-s) . 43 5.2.30 Thermal resistance junction to heat sink (Rth(j-s)
17、 . 44 5.2.31 Transient thermal impedance junction to ambient (Zth(j-a) . 44 5.2.32 Transient thermal impedance junction to case (Zth(j-c) 44 5.2.33 Transient thermal impedance junction to heat sink (Zth(j-s) 44 6 Measuring and test methods 44 6.1 General . 44 6.2 Measuring methods for electrical cha
18、racteristics 44 6.2.1 On-state voltage (VT) . 44 6.2.2 Repetitive peak reverse current (IRRM) 47 6.2.3 Latching current (IL) . 48 6.2.4 Holding current (IH) . 50 6.2.5 Off-state current (ID) 51 6.2.6 Repetitive peak off state current (IDRM) . 52 6.2.7 Gate trigger current or voltage (IGT), (VGT) . 5
19、3 6.2.8 Gate non-trigger voltage (VGD) and gate non-trigger current (IGD) . 54 6.2.9 Gate controlled delay time (td) and turn-on time (tgt) 56 6.2.10 Circuit commutated turn-off time (tq) 58 6.2.11 Critical rate of rise of off-state voltage (dv/dt(cr) 61 6.2.12 Critical rate of rise of commutating v
20、oltage of triacs (dv/dt(com) . 63 6.2.13 Recovered charge (Qr) and reverse recovery time (trr) 69 6.2.14 Circuit commutated turn-off time (tq) of a reverse conducting thyristor . 73 6.2.15 Turn-off behaviour of turn-off thyristors (for GTO) . 75 6.2.16 Total energy dissipation during one cycle (for
21、fast switching thyristors) . 78 6.3 Verification test methods for ratings (limiting values) 79 6.3.1 Non-repetitive peak reverse voltage (VRSM) . 79 6.3.2 Non-repetitive peak off-state voltage (VDSM) 80 BS IEC 60747-6:2016 4 IEC 60747-6:2016 IEC 2016 6.3.3 Surge (non-repetitive) on-state current (IT
22、SM) 81 6.3.4 On-state current ratings of fast-switching thyristors . 83 6.3.5 Critical rate of rise of on-state current (di/dt(cr) . 94 6.3.6 Peak case non-rupture current (IRSMC) . 97 6.4 Measuring methods for thermal characteristics 98 6.4.1 General . 98 6.4.2 Measurement of the case temperature 9
23、8 6.4.3 Measuring methods for thermal resistance (Rth) and transient thermal impedance (Zth) . 99 6.4.4 Measurement method of thermal resistance and impedance (Method A) 99 6.4.5 Measurement method of thermal resistance and impedance (Method B) 102 6.4.6 Measurement method of thermal resistance and
24、impedance (Method C, for GTO thyristors only) 113 6.4.7 Measurement method of thermal resistance and impedance (Method D, for GTO thyristors only) 117 7 Requirements for type tests and routine tests, marking of thyristors and endurance tests 120 7.1 Type tests . 120 7.2 Routine tests . 120 7.3 Measu
25、ring and test methods 121 7.4 Marking of thyristors 121 7.5 Endurance tests 121 7.5.1 General requirements . 121 7.5.2 Specific requirements . 122 7.5.3 Acceptance-defining characteristics and criteria for endurance tests . 122 7.5.4 Acceptance-defining characteristics and criteria for reliability t
26、ests 122 7.5.5 Procedure in case of a testing error 122 Bibliography . 124 Figure 1 Peak values of on-state currents . 10 Figure 2 Partial power (dissipation) of turn-off thyristors at absolute long on-state period . 13 Figure 3 Components of dynamic on-state energy dissipation of turn-off thyristor
27、s at absolute short on-state period . 15 Figure 4 Reverse recovery time 16 Figure 5 Off-state recovery time . 17 Figure 6 Circuit-commutated turn-off time . 18 Figure 7 Gate-controlled turn-on times . 19 Figure 8 Gate-controlled turn-off times . 21 Figure 9 Recovered charge Qr22 Figure 10 Applicatio
28、n of gate voltages for thyristors 28 Figure 11 Peak sinusoidal curents and typical waveforms at higher frequencies 32 Figure 12 Peak trapezoidal currents and typical waveforms at higher frequencies . 34 Figure 13 Forward gate voltage versus forward gate current . 38 Figure 14 Examples of current and
29、 voltage wave shapes during turn-off of a thyristor under various circuit conditions . 39 Figure 15 Curves with total energy dissipation Epas parameter and sinusoidal current pulse 41 BS IEC 60747-6:2016IEC 60747-6:2016 IEC 2016 5 Figure 16 Curves with total energy dissipation Epas parameter and tra
30、pezoidal current pulse 42 Figure 17 Recovered charge Qr, peak reverse recovery current Irrm, reverse recovery time trr(idealized characteristics) 43 Figure 18 Circuit for measurement of on-state voltage (d.c. method) . 45 Figure 19 Circuit for measurement of on-state voltage (oscilloscope method) 45
31、 Figure 20 Graphic representation of on-state voltage versus current characteristic (oscilloscope method) . 46 Figure 21 Circuit diagram for measurement of on-state voltage (pulse method) . 46 Figure 22 Circuit diagram for measuring peak reverse current . 48 Figure 23 Circuit diagram for measuring l
32、atching current . 49 Figure 24 Waveform of the latching current 50 Figure 25 Circuit diagram for measuring holding current . 51 Figure 26 Circuit diagram for measuring off-state current (d.c. method) . 52 Figure 27 Circuit diagram for measuring peak off-state current 52 Figure 28 Circuit diagram for
33、 measuring gate trigger current and/or voltage . 53 Figure 29 Circuit diagram for measuring gate non-trigger current and/or voltage. 55 Figure 30 Circuit diagram for measuring the gate controlled delay time and turn-on time 56 Figure 31 On-state current waveform of a thyristor 57 Figure 32 Off-state
34、 voltage and current waveform of a thyristor . 58 Figure 33 Thyristor switching waveforms 59 Figure 34 Diagram of basic circuit 60 Figure 35 Circuit diagram for measuring critical rate of rise of off-state voltage . 61 Figure 36 Waveform . 61 Figure 37 Measurement circuit for exponential rate of ris
35、e 62 Figure 38 Measurement circuit for critical rate of rise of commutating voltage 64 Figure 39 Waveforms . 65 Figure 40 Circuit diagram for high current triacs . 66 Figure 41 Waveforms with high and low di/dt 67 Figure 42 Circuit diagram for recovered charge and reverse recovery time (half sine wa
36、ve method) . 69 Figure 43 Current waveform through the thyristor T 70 Figure 44 Circuit diagram for recovered charge and reverse recover time (rectangular wave method) 71 Figure 45 Current waveform through the thyristor T 72 Figure 46 Circuit diagram for measuring circuit commutated turn-off time of
37、 reverse conducting thyristor 73 Figure 47 Current and voltage waveforms of commutated turn-off time of reverse conducting thyristor 74 Figure 48 Circuit diagram to measure turn-off behaviour of turn-off thyristors 76 Figure 49 Voltage and current waveforms during turn-off 76 Figure 50 Circuit diagr
38、am for measuring non-repetitive peak reverse voltage rating 79 Figure 51 Circuit diagram for measuring non-repetitive peak off-state voltage rating . 80 Figure 52 Circuit diagram for measuring surge (non-repetitive) on-state current rating 82 BS IEC 60747-6:2016 6 IEC 60747-6:2016 IEC 2016 Figure 53
39、 Basic circuit and test waveforms for sinusoidal on-state current with reverse voltage . 84 Figure 54 Extended circuit diagram for measuring sinusoidal on-state current with reverse voltage . 85 Figure 55 Basic circuit and test waveforms for sinusoidal on-state current with reverse voltage suppresse
40、d. . 87 Figure 56 Extended circuit diagram for measuring sinusoidal on-state current with reverse voltage suppressed 88 Figure 57 Basic circuit diagram and test waveforms for trapezoidal on-state current with reverse voltage applied 90 Figure 58 Basic circuit and test waveforms for trapezoidal on-st
41、ate current with reverse voltage suppressed 92 Figure 59 Circuit diagram for measuring critical rate of rise of on-state current 94 Figure 60 On-state current waveform for di/dt rating . 96 Figure 61 Circuit diagram for measuring peak case non-rupture current 97 Figure 62 Waveform of the reverse cur
42、rent iRthrough the thyristor under test . 97 Figure 63 Basic circuit diagram for the measurement of Rth(Method A) 100 Figure 64 Basic circuit diagram for the measurement of Zth(t) (Method A) . 101 Figure 65 Superposition of the reference current pulse on different on-state currents . 103 Figure 66 W
43、aveforms for power dissipation and virtual junction temperature (general case) 104 Figure 67 Calibration curve 106 Figure 68 Basic circuit diagram for the measurement of Rth(Method B) 108 Figure 69 Waveforms for measuring thermal resistance 109 Figure 70 Basic circuit diagram for the measurement of
44、Zth(t) (Method B) . 111 Figure 71 Waveforms for measuring transient thermal impedance . 111 Figure 72 Basic circuit diagram for the measurement of Rth(Method C) 114 Figure 73 Waveforms for measuring thermal resistance 114 Figure 74 Basic circuit diagram for the measurement of Zth(t) (Method C) . 116
45、 Figure 75 Waveforms for measuring the transient thermal impedance of a gate turn-off thyristor . 116 Figure 76 Calibration and measurement arrangement for the heat flow method . 118 Table 1 Additional general subscripts . 23 Table 2 Principal voltages, anode-cathode voltages 24 Table 3 Principal cu
46、rrents, anode currents, cathode currents 24 Table 4 Gate voltages 24 Table 5 Gate currents 24 Table 6 Time quantities 25 Table 7 Power dissipation 25 Table 8 Sundry quantities . 25 Table 9 Minimum type and routine tests for reverse-blocking triode thyristors 121 Table 10 Acceptance-defining characte
47、ristics after endurance tests 122 Table 11 Conditions for endurance tests . 123 BS IEC 60747-6:2016IEC 60747-6:2016 IEC 2016 7 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES Part 6: Discrete devices Thyristors FOREWORD 1) The International Electrotechnical Commission (IEC) is a wo
48、rldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other
49、 activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in t
