1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A To correct test conditions VCCA, VCCBlimit for high/low level output voltage (VOH,VOL), input hold current (II(hold) ) and power off leakage (IOFF) to table IA. Update test condition of VCCvoltage limit for SEL and SEU to SEP test table IB. - MAA
2、12-01-19 Thomas M. Hess REV SHEET REV A A A A A A SHEET 15 16 17 18 19 20 REV STATUS OF SHEETS REV A A A A A A A A A A A A A A SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Muhammad Akbar DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCI
3、RCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Muhammad Akbar APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, RADIATION HARDENED, 16-BIT DUAL SUPPLY BUS TRANSCEIVER AND LEVEL TRANSLATOR WITH BUS HOL
4、D, A SIDE SERIES RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 11-09-22 REVISION LEVEL A SIZE A CAGE CODE 67268 5962-11207 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E136-12Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
5、STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-11207 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (
6、device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 11207 01
7、V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels
8、and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit funct
9、ion as follows: Device type Generic number Circuit function 01 54VCXH163245 16-bit dual supply bus transceiver and level translator with bus hold, A side series output resistors, and three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the pro
10、duct assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Ca
11、se outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A f
12、or device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-11207 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ S
13、upply voltage range (VCCA, VCCB ) at Bus A and B -0.5 V dc to +4.6 V dc DC input voltage range (VIN : DIR,G) at Bus B -0.5 V dc to VCCB+0.5 V dc DC input voltage range (Vi:/oA, Vi/oB) . -0.5 V dc to +4.6 V dc DC output voltage range (VOUTA) at Bus A . 0.5 V dc to VCCA+0.5 V dc DC output voltage rang
14、e (VOUTB) at Bus B . 0.5 V dc to VCCB+0.5 V dc DC input/output clamp current (IIK, IOK) 20 mA DC output current (per pin) (IOUT) . 50 mA DC VCCor GND current (per output pin) (ICC, IGND) 100 mA Maximum power dissipation (PD) . 400 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature
15、(soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . 22C/W Junction temperature (TJ) +150C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCCA, VCCB ) at Bus A and B +1.8 V dc to +3.6 V dc Input voltage range (VIN : DIR, G) at Bus B +0.0 V dc to +3.6 V dc D
16、C input voltage range (VI:/0A, VI/0B) at Bus A and B. +0.0 V dc to +3.6 V dc DC output voltage range (VOUTA) at Bus A . +0.0 V dc to VCCAV dc DC output voltage range (VOUTB) at Bus B . +0.0 V dc to VCCBV dc Case operating temperature range (TC) . -55C to +125C Input rise or fall time rate (t/v) at V
17、cc =3 V 0 to 10 ns/V 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rad(Si)/s) 300K rad(Si) Single event phenomena (SEP): No Single Event Latch-up (SEL) occurs at effective LET (see 4.4.4.2) 110 MeV-cm2/mg No Single Event Upset (SEU) occurs at effective LET (see 4.4.4.2) 60
18、 MeV-cm2/mg 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herei
19、n shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproducti
20、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-11207 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specifi
21、cation, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issue of these documents is those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specifi
22、cation for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (C
23、opies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the exte
24、nt specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies
25、 of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this
26、drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as s
27、pecified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-
28、JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case
29、outline. The case outline shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified
30、on figure 4. 3.2.5 Ground bounce waveforms and test circuit. The ground bounce waveforms and test circuit shall be as specified on figure 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS,
31、 OHIO 43218-3990 SIZE A 5962-11207 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upo
32、n request. 3.2.7 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation pa
33、rameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be
34、 the subgroups specified in table II. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasibl
35、e due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in acco
36、rdance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compl
37、iance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed
38、 as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements o
39、f MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with e
40、ach lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 V
41、erification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the o
42、ption of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA
43、NDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-11207 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +1.8 V VCC +3.6 V unless otherw
44、ise specified VCCAVCCBGroup A subgroups Limits 4/ Unit Min Max Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA Open Open 1 -1.5 -0.4 V High level output voltage 3006 VOHBus A output VIN=VIH(min) or VIL(max) IOH=-100A 3.0 V 2.3 V 1, 2, 3 2.8 V IOH= -8 mA 3.0 V 2.3 V 1, 2, 3 2
45、.4 IOH= -8 mA 3.0 V 1.65 V 1, 2, 3 2.4 IOH= -6 mA 2.3 V 1.65 V 1, 2, 3 1.8 Bus B output VIN=VIH(min) or VIL(max) IOH=-100A 3.0 V 2.3 V 1, 2, 3 2.1 IOH= -18 mA 3.0 V 2.3 V 1, 2, 3 1.7 IOH= -6 mA 3.0 V 1.65 V 1, 2, 3 1.25 IOH= -6 mA 2.3 V 1.65 V 1, 2, 3 1.25 Low level output voltage 3007 VOLBus A outp
46、ut VIN= VIH(min) or VIL(max) IOL= 100 A 3.0 V 2.3 V 1, 2, 3 0.2 V IOL= 8mA 3.0 V 2.3 V 1, 2, 3 0.55 IOL= 8 mA 3.0 V 1.65 V 1, 2, 3 0.55 IOL= 6 mA 2.3 V 1.65 V 1, 2, 3 0.40 Bus B output VIN= VIH(min) or VIL(max) IOL= 100 A 3.0 V 2.3 V 1, 2, 3 0.2 IOL= 18mA 3.0 V 2.3 V 1, 2, 3 0.6 IOL= 6 mA 3.0 V 1.65
47、 V 1, 2, 3 0.3 IOL= 6 mA 2.3 V 1.65 V 1, 2, 3 0.3 High level input voltage VIHBus A 1.8 V 1.8 V 1, 2, 3 0.65*VCCAV 2.5 V 2.5 V 1, 2, 3 1.6 3.3 V 3.3 V 1, 2, 3 2.0 Bus B 1.8 V 1.8 V 1, 2, 3 0.65*VCCB2.5 V 2.5 V 1, 2, 3 1.6 3.3 V 3.3 V 1, 2, 3 2.0 Low level input voltage VILBus A 1.8 V 1.8 V 1, 2, 3 0
48、.35*VCCAV 2.5 V 2.5 V 1, 2, 3 0.7 3.3 V 3.3 V 1, 2, 3 0.8 Bus B 1.8 V 1.8 V 1, 2, 3 0.35*VCCB2.5 V 2.5 V 1, 2, 3 0.7 3.3. V 3.3 V 1, 2, 3 0.8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING
49、 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-11207 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +1.8 V VCC +3.6 V unless otherwise specified VCCAVCCBG
