1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R039-98. 98-02-06 Raymond L. Monnin B Update radiation features in section 1.5, table IB SEP test limits, and paragraphs 4.4.4.1 4.4.4.4. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements.
2、 - LTG 10-04-19 Thomas M. Hess REV SHET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MI
3、CROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT EXCLUSIVE OR GATE, TTL COMPATIBLE INPUTS, MONOL
4、ITHIC SILICON DRAWING APPROVAL DATE 95-09-15 REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95814 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E248-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95814 DEFENSE S
5、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l
6、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95814 01 V X C Federal stock class designator RHA designa
7、tor (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator.
8、 Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit
9、function 01 HCTS86 Radiation hardened, SOS, high speed CMOS, quad 2-input exclusive OR gate, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor
10、 self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Out
11、line letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-lineX CDFP3-F14 14 Flat pack1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction o
12、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95814 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC in
13、put voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) . 25 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +265C
14、 Thermal resistance, junction-to-case (JC): Case outline C 24C/W Case outline X 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C 74C/W Case outline X 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C 0.68 W Case outline X
15、0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V Minimum high level input voltage (VIH) . VCC/2 Case operating tempe
16、rature range (TC) . -55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf) 100 ns/V 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 10
17、0 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 1 x 108 Rads(Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads(Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect r
18、eliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, pro
19、vide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline C 13.5 mW/C Case outline X 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MIC
20、ROCIRCUIT DRAWING SIZE A 5962-95814 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawin
21、g to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883
22、- Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/
23、assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes preced
24、ence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or a
25、s modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B de
26、vices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes
27、 Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified o
28、n figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The Switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the ma
29、nufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95814 DEFENSE SUPPLY CENTER C
30、OLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in tab
31、le IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN l
32、isted in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designato
33、r shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as r
34、equired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requiremen
35、ts of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved so
36、urce of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as
37、 required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.
38、2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required
39、documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for
40、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95814 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test condit
41、ions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Limits 2/ Unit Min Max High level output voltage VOHFor all inputs affecting output under test VIH= 2.25 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -50 A All 4.5 V 1, 2, 3 4.40 V M, D, P, L, R 3/ All 1 4.4
42、0 For all inputs affecting output under test VIH= 2.75 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -50 A All 5.5 V 1, 2, 3 5.40 M, D, P, L, R 3/ All 1 5.40 Low level output voltage VOLFor all inputs affecting output under test VIH= 2.25 V or VIL= 0.8 V For all other inputs VIN= VCCor GN
43、D IOL= 50 A All 4.5 V 1, 2, 3 0.1 V M, D, P, L, R 3/ All 1 0.1 For all inputs affecting output under test VIH= 2.75 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOL= 50 A All 5.5 V 1, 2, 3 0.1 M, D, P, L, R 3/ All 1 0.1 Input current high IIHFor input under test, VIN= 5.5 V For all other inpu
44、ts VIN= VCCor GND All 5.5 V 1 +0.5 A 2, 3 +5.0 M, D, P, L, R 3/ All 1 +5.0 Input current low IILFor input under test, VIN= GND For all other inputs VIN= VCCor GND All 5.5 V 1 -0.5 A 2, 3 -5.0 M, D, P, L, R 3/ All 1 -5.0 Output current high (Source) IOHFor all inputs affecting output under test VIN=
45、4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V All 4.5 V 1 -4.8 mA 2, 3 -4.0 M, D, P, L, R 3/ All 1 -4.0 Output current low (Sink) IOLFor all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 0.4 V All 4.5 V 1 4.8 mA 2, 3 4.0 M, D, P, L,
46、 R 3/ All 1 4.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95814 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TAB
47、LE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Limits 2/ Unit Min Max Quiescent supply current delta, TTL input levels ICC4/ For inputs under test VIN= VCC- 2.1 V For all other inputs VI
48、N= VCCor GND All 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R 3/ 4/ All 1 1.6 Quiescent supply current ICCVIN= VCCor GND All 5.5 V 1 10.0 A 2, 3 200 M, D, P, L, R 3/ All 1 200 Input capacitance CINVIH= 5.0 V, VIL= 0.0 V f = 1 MHz, see 4.4.1c All 5.0 V 4 10 pF Power dissipation capacitance CPD5/ All 5.0 V 4 36 pF 5, 6 51 Functional test 6/ VIH= 2.25 V, VIL= 0.80 V All 4.5 V 7, 8 L H See 4.4.1b M, D, P, L, R 3/ All 7 L H Propagation delay time, An or Bn to Yn tPHL7/ CL= 50 pF RL= 500 See figure 4 All 4.5 V 9 2.0 18.0 ns 10, 11 2.0 20.0 M, D, P, L, R 3/ All 9
