1、BRITISH STANDARD BS EN 60747-16-1:2002 +A1:2007 Semiconductor devices Part 16-1: Microwave integrated circuits Amplifiers ICS 31.080.99; 31.200 BS EN 60747-16-1:2002+A1:2007 This British Standard was published under the authority of the Standards Policy and Strategy Committee on 18 March 2002 BSI 20
2、08 ISBN 978 0 580 62540 4 National foreword This British Standard is the UK implementation of EN 60747-16-1:2002+A1:2007. It is identical with IEC 60747-16-1:2001, incorporating amendment 1:2007. It supersedes BS EN 60747-16-1:2002 which is withdrawn. The start and finish of text introduced or alter
3、ed by amendment is indicated in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment 1 is indicated by !“. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors. A list of
4、 organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard cannot confer immunity from legal o
5、bligations. Amendments/corrigenda issued since publication Date Comments 30 April 2008 Implementation of IEC amendment 1:2007 with CENELEC endorsement A1:2007EUROPEAN STANDARD EN 60747-16-1 NORME EUROPENNE EUROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen
6、de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2002 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-1:2002 E ICS 31.080.99 Eng
7、lish version Semiconductor devices Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001) Dispositifs semiconducteurs Partie 16-1: Circuits intgrs hyperfrquences - Amplificateurs (CEI 60747-16-1:2001) Halbleiterbauelemente Teil 16-1: Integrierte Mikrowellen- Verstrker (IEC 60747
8、-16-1:2001) This European Standard was approved by CENELEC on 2002-02-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibl
9、iographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibili
10、ty of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Lux
11、embourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom. February 2007:2002+A1Foreword The text of document 47E/200/FDIS, future edition 1 of IEC 60747-16-1, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to
12、 the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60747-16-1 on 2002-02-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2002-11-01 latest date by which the
13、national standards conflicting with the EN have to be withdrawn (dow) 2005-02-01 Annexes designated “normative“ are part of the body of the standard. In this standard, annex ZA is normative. _ Endorsement notice The text of the International Standard IEC 60747-16-1:2001 was approved by CENELEC as a
14、European Standard without any modification. _ Foreword to amendment A1 The text of document 47E/305/FDIS, future amendment 1 to IEC 60747-16-1:2001, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approve
15、d by CENELEC as amendment A1 to EN 60747-16-1:2002 on 2007-02-01. The following dates were fixed: latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2007-11-01 latest date by which the national standards
16、 conflicting with the amendment have to be withdrawn (dow) 2010-02-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of amendment 1:2006 to the International Standard IEC 60747-16-1:2001 was approved by CENELEC as an amendment to the European Standard without any modification. _ P
17、age 2 BS EN 60747-16-1:2002+A1:2007 BSI 2008CONTENTS 1 Scope 5 2 Normative references. 5 3 Terminology. 6 4 Essential ratings and characteristics 8 4.1 General 8 4.2 Application related description 9 4.3 Specification of the function.10 4.4 Limiting values (absolute maximum rating system) 11 4.5 Ope
18、rating conditions (within the specified operating temperature range)13 4.6 Electrical characteristics13 4.7 Mechanical and environmental ratings, characteristics and data 15 4.8 Additional information15 5 Measuring methods 16 5.1 General .16 5.2 Linear (power) gain (G lin ).16 5.3 Linear (power) gai
19、n flatness ( G lin )18 5.4 Power gain (G p ).19 5.5 (Power) gain flatness ( G p ) .19 5.6 (Maximum available) gain reduction ( G red ).20 5.7 Limiting output power (P o(ltg) ) 21 5.8 Output power (P o )22 5.9 Output power at 1 dB gain compression (P o(1dB) ).23 5.10 Noise figure (F)24 5.11 26 5.12 P
20、ower at the intercept point (for intermodulation products) (P n(IP) ).28 5.13 .29 5.14 30 5.15 .34 5.16 Conversion coefficient of amplitude modulation to phase modulation ( (AM-PM) ) 35 5.17 Group delay time (t d(grp) ) .37 5.18 Power added efficiency38 5.19 .40 5.20 Output noise power (P N ) .41 5.
21、21 43 Page 3 Intermodulation distortion (two-tone) (P 1 /P n ) Magnitude of the input reflection coefficient (input return loss) (|S 11 |) Magnitude of the output reflection coefficient (output return loss) (|S 22 |) Magnitude of the reverse transmission coefficient (isolation) (|S 12 |) nth order h
22、armonic distortion ratio (P 1 /P nth ) Spurious intensity under specified load VSWR (P o /P sp ) 5.22 Adjacent channel power ratio (P o(mod)/P adj ) .45 BS EN 60747-16-1:2002+A1:2007 BSI 2008Figure 1 Circuit for the measurements of linear gain.16 Figure 2 Basic circuit for the measurement of the noi
23、se figure24 Figure 3 Basic circuit for the measurements of two-tone intermodulation distortion 26 Figure 4 Circuit for the measurements of magnitude of input/output reflection coefficient (input/output return loss) 29 Figure 5 Circuit for the measurement of output reflection coefficient.32 Figure 6
24、Circuit for the measurement of isolation34 Figure 7 Basic circuit for the measurement of (AM-PM) 35 Figure 8 Circuit for the measurement of the power added efficiency.38 Figure 9 Circuit for the measurements of the nth order harmonic distortion ratio 40 Figure 10 Circuit diagram for the measurement
25、of the output noise power42 Figure 11 Circuit diagram for the measurement of the spurious intensity 44 Annex ZA (normative) Normative references to international publications with their corresponding European publications56 6 Verifying methods 6.1 Load mismatch tolerance ( L ) 6.2 Source mismatch to
26、lerance ( S ) 6.3 Load mismatch ruggedness ( R ) .48 48 .51 54 Figure 12 Circuit for the measurement of the adjacent channel power ratio Figure 13 Circuit for the verification of load mismatch tolerance in method 1 Figure 14 Circuit for the verification of load mismatch tolerance in method 2 Figure
27、15 Circuit for the verification of source mismatch tolerance in method 1 Figure 16 Circuit for the verification of source mismatch tolerance in the method 2 Figure 17 Circuit for the verification of load mismatch ruggedness 46 49 50 52 53 .54 Page 4 BS EN 60747-16-1:2002+A1:2007 BSI 2008SEMICONDUCTO
28、R DEVICES Part 16-1: Microwave integrated circuits Amplifiers 1 Scope This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as well as the measuring methods for integrated circuit microwave power amplifiers. 2 Normative references The following normative documen
29、ts contain provisions which, through reference in this text, constitute provisions of this part of IEC 60747. For dated references, subsequent amend- ments to, or revisions of, any of these publications do not apply. However, parties to agreements based on this part of IEC 60747 are encouraged to in
30、vestigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60747-7:2000,
31、 Semiconductor devices Part 7: Bipolar transistors IEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integrated circuits IEC 60748-3:1986, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuits IEC 60748-4:1997, Semiconductor devices Integrated circu
32、its Part 4: Interface integrated circuits IEC 60617:2001, Graphical symbols for diagrams IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-4:-, Semiconductor devices Discrete devices Part 4: Microwave diodes and transistors 1IEC 60747-16-2:2001, Semiconductor devices Part 16-2: Micro
33、wave integrated circuits Frequency prescalers IEC 60747-16-4:2004, Semiconductor devices Part 16-4: Microwave integrated circuits Switches ! 1The second edition of IEC 60747-4, which is cited in this standard, and to which terms introduced in this amendment refer, is currently in preparation (ADIS).
34、 ! “ Page 5 BS EN 60747-16-1:2002+A1:2007 BSI 2008 “ IEC/TS 61340-5-1:1998, Electrostatics - Part 5-1: Protection of electronic devices from electrostatic phenomena - General requirements IEC/TS 61340-5-2:1999, Electrostatics - Part 5-2: Protection of electronic devices from electrostatic phenomena
35、- User guide “ ! “ !3 Terminology 3.1 linear (power) gain G lin power gain in the linear region of the power transfer curve P o (dBm) = f(P i ) NOTE In this region, P o (dBm) = P i (dBm). 3.2 linear (power) gain flatness G lin power gain flatness when the operating point lies in the linear region of
36、 the power transfer curve 3.3 power gain G p G ratio of the output power to the input power NOTE Usually the power gain is expressed in decibels. 3.4 (power) gain flatness G p difference between the maximum and minimum power gain for a specified input power in a specified frequency range 3.5 (maximu
37、m available) gain reduction G red difference in decibels between the maximum and minimum power gains that can be provided by the gain control 3.6 Output power limiting 3.6.1 output power limiting range range in which, for rising input power, the output power is limiting NOTE For specification purpos
38、es, the limits of this range are specified by specified lower and upper limit values for the input power. 3.6.2 limiting output power P o(ltg) output power in the range where it is limiting 3.6.3 limiting output power flatness P o(ltg) difference between the maximum and minimum output power in the o
39、utput power limiting range: P o(ltg)= P o(ltg,max) P o(ltg,min) 3.7 intermodulation distortion P 1 /P nratio of the fundamental component of the output power to the nth order component of the output power, at a specified input power ! “ Page 6 BS EN 60747-16-1:2002+A1:2007 BSI 20083.8 power at the i
40、ntercept point (for intermodulation products) P n(IP) output power at intersection between the extrapolated output powers of the fundamental component and the nth order intermodulation components, when the extrapolation is carried out in a diagram showing the output power of the components (in decib
41、els) as a function of the input power (in decibels) 3.9 magnitude of the input reflection coefficient (input return loss) |S 11 | see 3.5.2.1 of IEC 60747-7 3.10 magnitude of the output reflection coefficient (output return loss) |S 22 | see 3.5.2.2 of IEC 60747-7 3.11 magnitude of the reverse trans
42、mission coefficient (isolation) |S 12 | see 3.5.2.4 of IEC 60747-7 3.12 conversion coefficient of amplitude modulation to phase modulation (AM-PM) quotient of the phase deviation of the output signal (in degrees) by the change in input power (in decibels) producing it 3.13 group delay time t d(grp)
43、ratio of the change, with angular frequency, of the phase shift through the amplifier NOTE Usually group delay time is very close in value to input-to-output delay time. 3.14 nth order harmonic distortion ratio P 1 /P nthratio of the power of the fundamental frequency measured at the output port of
44、the device to the power of the nth order harmonic component measured at the output port for a specified output power 3.15 output noise power P N maximum noise power measured at the output port of the device within a specified bandwidth in a specified frequency range for a specified output power 3.16
45、 spurious intensity under specified load VSWR P o /P spratio of the power of the fundamental frequency measured at the output port of the device to the maximum spurious power measured at the output port under specified load VSWR 3.17 output power P osee 3.3 of IEC 60747-16-2 ! “ ! “ ! “ Page 7 BS EN
46、 60747-16-1:2002+A1:2007 BSI 20084 Essential ratings and characteristics 4.1 General 4.1.1 Circuit identification and types 4.1.1.1 Designation and types The indication of type (device name), the category of the circuit and the technology applied should be given. Microwave amplifiers are divided int
47、o four categories: Type A: Low-noise type. Type B: Auto-gain control type. Type C: Limiting type. Type D: Power type. 4.1.1.2 General function description A general description of the function performed by the integrated circuit microwave amplifiers and the features for the application should be mad
48、e. 3.18 output power at 1 dB gain compression P o(1dB)see 8.2.13 of IEC 60747-4 3.19 noise figure F see 702-08-57 of IEC 60050-702 3.20 power added efficiency addsee 8.2.15 of IEC 60747-43.21 adjacent channel power ratio P o(mod)/P adj see 3.10 of IEC 60747-16-4 3.22 load mismatch tolerance Lsee 7.2.20 of IEC 60747-4 3.23 source mismatch tolerance Ssee 7.2.21 of IEC 60747-4 3.24 load mismatch ruggedness Rsee 7.2.22 of IEC 60747-4 ! “ Page 8 BS EN 60747-16-1:2002+A1:2007 BSI 20084.1.1.3 Manufacturing technology The manufacturing technology, for example, semiconductor
