1、 MIL-PRF-19500/343K 1 MAY 2012 SUPERSEDING MIL-PRF-19500/343J 2 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER, TYPES 2N2857 AND 2N2857UB, JAN, JANTX, JANTXV, AND JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANHCF, JANHCG, JANSH, JANHC, AND JANKC Th
2、is specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N
3、PN, silicon, low power, ultra-high frequency transistors. Four levels of product assurance are provided for each device type. Two levels of product assurance are provided for unencapsulated devices as specified in MIL-PRF-19500. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are ap
4、pended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (TO-72), figure 2 (UB surface mount), and figure 3 (JANHC, JANKC die). * 1.3 Maximum ratings at TA= +25C unless otherwise specified. PTTA= +25C PT(1) TC= +25C ICVCBOVCEOVEBORJA(
5、2) RJSP(2) RJC(2) TJand TSTGmW mW mA dc V dc V dc V dc C/W 550 350 C/W 210 C/W 300 130 C TO-72 UB 200 200 300 300 40 40 30 30 15 15 3 3 -65 to +200 (1) Derate linearly 1.71 mW/C for TC +25C. * (2) For thermal impedance curves, see figures 4, 5, and 6. AMSC N/A FSC 5961INCH-POUND * Comments, suggesti
6、ons, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online databa
7、se at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 1 August 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 2 1.4 Primary electric
8、al characteristics at TA= +25C. hFE1| hfe| Ccb F Gpe rb Cc VCE= 1 V dc IC= 3 mA dc VCE= 6 V dc IC= 5 mA dc f = 100 MHz VCB= 10 V dc IE= 0 f = 100 kHz f 1 MHz VCE= 6 V dc IC= 1.5 mA dc f = 450 MHz Rg= 50 VCE= 6 V dc IC= 1.5 mA dc f = 450 MHz VCB= 6 V dc IE= 2 mA dc f = 31.9 MHz Min Max 30 150 10 21 p
9、f 1.0 db 4.5 db 12.5 21 ps 4 15 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as
10、examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specificati
11、ons, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-1
12、9500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document
13、Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in t
14、his document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification
15、shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall b
16、e as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, and 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 3 NOTES:
17、1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .
18、054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimensio
19、n LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. Lead 1
20、 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N2857, (TO-72). Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 5 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 5 LC .100 TP 2.54 TP 7,8 LD .016
21、 .021 .410 .533 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 .41 .48 L1.050 1 .27 L2.250 6.35 P .100 2.54 Q .040 1.02 5 TL .028 .048 .71 1.22 TW .036 .046 .91 1.17 r .007 .18 45 TP Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 4
22、 Symbol Dimensions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .040 0.89 1.02 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .0
23、12 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = base, Pad 2 = emitter, Pad 3 = collector, Pad 4 = sh
24、ielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 5 Die size -.01
25、6 x .016 inch (0.41 x 0.41 mm). Die thickness-.008 .0016 inch (0.203 0.041 mm). Base pad-.0023 x .0023 inch (0.058 x 0.058 mm). Emitter pad-.0023 x .0023 inch (0.058 x 0.058 mm). Back metal:-Gold, 6,500 1,950 . Top metal-Aluminum, 17,500 2,500 . Back side-Collector. Glassivation-SiO2, 7,500 1,500 .
26、FIGURE 3. JANHC and JANKC (A-version) die dimensions. B E SCA0011 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 6 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where
27、 a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unle
28、ss otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of t
29、he manufacturer, marking on the UB package may be omitted from the body, but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability,
30、or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, III, and IV). 4.2 Qualification inspection. Qu
31、alification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1. JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or
32、re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table IV tests, the tests specified in table IV herein that were not performed in the prior revision shall be performed on the first inspection lot of this
33、revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 7 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein.
34、 The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3
35、.3). Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3). 9 ICES, hFE1. Not applicable. 10 48 hours minimum. 48 hours minimum. 11 ICES, hFE1; ICES= 100 percent of initial value or 5 nA, whichever is greater; hFE1= 15 percent. ICES, hFE1.12 See 4.3.1. See 4.3.1. 13 Subgroups 2 and 3 of table I
36、herein; ICES= 100 percent of initial value or 5 nA dc, whichever is greater; hFE1= 15 percent . Subgroup 2 of table I herein; ICES= 100 percent of initial value or 5 nA dc, whichever is greater; hFE1= 15 percent. * (1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do no
37、t need to be repeated in screening requirements. * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 15 V dc; PT= 200 mW at, TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. NOTE: No heat sink or forced air cooling on the devices shall be per
38、mitted. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. * 4.3.3 Thermal impedance. Th
39、e thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit shall comply with the thermal impedance graph on figures 4, 5, and 6 (less than
40、or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3131 of MIL-STD-750. See table IV, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as spe
41、cified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B ha
42、s already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/343K 8 4.4.2 Group
43、 B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) shall be in a
44、ccordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. * 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions * B4 1037 VCB= 5 - 15 V dc, 2,000 cycles, tON= tOFF= 3 minutes, PD(ON)= PDmax rated in accordance
45、with 1.3; PD(OFF)= 0. B5 1027 VCB= 10 V dc; 340 hours maximum rated power shall be applied and ambient temperature adjusted to achieve TJ= +150C minimum. n = 45, c = 0. * 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a g
46、roup B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Conditions * 1 1026 1,000 hours at VCB
47、 = 10 V dc; power shall be applied and ambient temperature adjusted to achieve TJ = +150C minimum and a minimum of PD = 100 percent of maximum rated PT as defined in 1.3 n = 45, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,
48、000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life: TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High temperature life (non-operating), t = 340 hours; TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
