1、MIL-HDBK-2b3B 9999970 OL38Lq Tb5 MIL-HDBK-263B 31 July 1994 SUPERSEDING MIL-HDBK-263A 22 February 1991 (See 6.1 and 6.4) MILITARY HANDBOOK ELECTROSTATIC DISCHARGE CONTROL HANDBOOK FOR PROTECTION OF ELECTRICAL AND ELECTRONIC PARTS, ASSEMBLIES AND EQUIPMENT (EXCLUDING ELECTRICALLY INITIATED EXPLOS I V
2、E DEVICES) (METRIC) AMSC N/A AREA RELI DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-2636 FOREWORD 1. Agencies of the Department of Defense. This military ha
3、ndbook is approved for use by all Departments and 2. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Naval Sea Systems Command, SEA 91Q22, 2531 Jefferson Davis Highway, Arlington, Vir
4、ginia 22242-5160, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. 3. This handbook provides guidance, not mandatory requirements, for the establishment and implementation of an Electrostatic Discharge (ESD)
5、Control Program in accordance with the requirements of MIL-STD-1686. applicable to the protection of electrical and electronic parts, assemblies and equipment from damage due to ESD. protection of electrically initiated explosive devices. This document is It does not provide information for the 4. V
6、arious segments of industry are aware of the damage static electricity can impose on metal oxide semiconductor (MOS) parts. The sensitivity of other parts to electrostatic discharge damage has also become evident through use, testing, and failure analysis. Trends in technology utilizing new material
7、s, processes and design techniques, including increased packaging densities result in some parts being more susceptible to ESD. 5. sensitive (ESDS) include: microelectronic discrete and integrated semiconductor devices; thick and thin film resistors, chips and hybrid devices; and piezoelectric cryst
8、als. Subassemblies, assembl ies and equipment containing these parts are also ESDS. Electrical and electronic parts which have been determined to be ESD 6. Materials which are prime generators of electrostatic voltages include, but are not limited to, common plastics such as polyethylene, vinyls, fo
9、am, polyurethane, synthetic textiles, fiberglass, glass, rubber, and other commonly used materials. Damaging electrostatic voltage levels are commonly generated by contact and subsequent separation of these materials by industrial processes and personnel movement. 7. Intense pressure has existed, an
10、d continues to exist, for a cook book“ approach to ESD control program implementation. Simplistic approaches to a complex technical subject such as electrostatic discharge control program design and implementation are neither desirable, cost effective nor feasible. A single “cook book“ ESD control p
11、rogram cannot be mandated or prepared which is applicable for all situations. An “idealized“ ESD control program may represent overkill for most applications. In contrast, a less rigorous ii Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-26
12、3B program may not offer sufficient or adequate protection in all situations. Therefore, an ESD control program must be custom-tailored to meet the specific requirements of the preparer for their specific product in its unique manufacturing facility and expected environments. The ESD control program
13、 plan (data item description (DID) DI-RELI-80669A) is developed to establish efficient and cost effective ESD controls and procedures. The ESD control program plan provides the opportunity to tailor the technical approach for implementation of ESD controls in a meaningful and cost effective manner.
14、8. The protection of ESDS parts, subassemblies, assemblies and equipment will be provided through the implementation of cost effective ESD controls. The lack of implementation of ESD controls and procedures throughout the equipment life-time has resulted in increased repair costs, equipment downtime
15、, and reduced mission readiness. iii Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-_ flIL-HDBK-Zb3B 9999970 01193837 774 Paragraph 1 . 1.1 1.2 1.2.1 1.3 1.3.1 1.3.2 1.3.3 2 . 2.1 2.1.1 2.2 2.3 3 . 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 3.12
16、3.13 3.14 3.15 3.16 3.17 3.18 3.19 3.20 3.21 3.22 3.23 3.24 MIL-HDBK-263B CONTENTS Pase SCOPE . 1 Scope 1 Application of MIL.STD.1686 3 MIL-STD-1686 application considerations 3 Tailoring of MIL.STD.1686 . 3 Contractual review . 3 Deliverable data requirements . 4 Tailoring flow chart 4 . APPLICABLE
17、 DOCUMENTS 8 Government documents 8 Specifications. standards. handbooks. and bu1 1 etins . 8 Non-Government publications 9 Order of precedence 9 DEFINITIONS . Definitions . Accelerated life testing . Antistatic property . As sembl y . Avalanche breakdown . Bulk breakdown Catastrophic failure . Char
18、ge Charged device model . Classification of ESDS parts, assemblies and equipment C1 assi fi cation testing . Conductive material . Corona discharge . Decay time Device Dielectric breakdown . Dissipative material . Electric field El ectr i cal and el ectroni c part Electrostatic charge . Electrostati
19、c discharge (ESD) Electrostatic discharge sensitive (ESDS) . Electrostatic field . Earth ground . . . 10 . . 10 . . 10 . . 10 . . 10 . . 10 . . 10 . . 10 . . 10 . . 10 . . 10 . . 11 . . 11 . . 11 . . 11 . . 11 . . 11 . . 11 . . 11 . . 11 . . 12 . . 12 . . 12 . . 12 . . 12 iv Provided by IHSNot for R
20、esaleNo reproduction or networking permitted without license from IHS-,-,-Paragraph 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 3.36 3.37 3.38 3.39 3.40 3.41 3.42 3.43 3.44 3.45 3.46 3.47 3.48 3.49 3.50 3.51 3.52 3.53 3.54 3.55 4 . 4.1 5 . 5.1 5.2 5.2.1 5.2.2 5.3 5.3.1 MI L . HDBK- 263B C
21、ONTENTS . Continued Paqe Electrostatic shield 12 Electrostatics . 12 Equipment . 12 ESD protected area . 12 ESD protective handling 12 ESD protective material 12 ESD protective packaging 12 ESD sensitivity (ESDS) classification . 13 Field induced model 13 Ground . 13 Handled or handling 13 Hard grou
22、nd 13 Human body model 13 Induction . 13 Input protection 13 Insulative material 13 LRU 13 Part 13 Protected area . 13 Protective handling 13 Protective packaging 13 Protective storage . 13 Resistivity 14 Soft ground 14 SRU 14 Static shielding materials . 14 Subassembly 14 Tailoring . 14 Technical d
23、ata . 14 Technical data package (TDP) 14 Triboelectric effect 14 GENERAL REQUIREMENTS OF MIL-STD-1686 14 General 14 DETAILED REQUIREMENTS OF MIL-STD-1686 . 15 ESD control program plan 15 Classification of ESDS parts. assemblies and equipment . 15 Part classification 15 Assembly and equipment classif
24、ication . 16 Design protection . 16 Protection of parts and assemblies . 16 V Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-2b3B W 70 OL3BL9 547 W Paragraph 5.3.2 5.4 5.4.1 5.5 5.6 5.7 5.8 5.8.1 5.8.2 5.8.3 5.9 5.10 5.11 5.12 5.13 MIL-HDBK
25、-263B CONTENTS . Conti nued Paqe Protection of equipment 16 Protected areas 17 Related design factors . 17 Handling procedures 17 Protective covering 17 Training 18 Marking of hardware 18 ESDS assemblies 18 Equipment . 18 External equipment terminals 18 Documentation . 19 Packaging . 19 Quality assu
26、rance requirements 19 Formal reviews and audits . 19 Failure analysis 20 6 . NOTES . 20 6.1 Intended use 20 6.2 Issue of DODISS 20 6.3 Subject term (key word) listing 20 6.4 Changes from previous issue 20 FIGURES Figure 1 . MIL-STD-1686 Tai 1 oring 5/6/7 2 . 3 . Equivalent circuit . bipolar devices
27、54 4 . Equivalent circuit . MOS devices 55 5 . Charge induced on device 56 6 . Gate protection networks 70 7 . ESD protective work bench . 77 8 . ESD protected area caution sign 78 9 . 78 Failure categories based on completed failure analysis 45 ESD protected area cert i fi cat i on/rei nspect i on
28、1 abel TABLES Tab1 e I . Cross-reference table . 1/2 II . Sample triboelectric series 26 III . Typical prime charge sources 27 IV . Typical electrostatic voltages . 28 V . Part constituents susceptible to ESD . 34/35/36 vi Provided by IHSNot for ResaleNo reproduction or networking permitted without
29、license from IHS-,-,-MIL-HDBK-263B CONTENTS . Continued APPENDICES Introduction 22 APPENDIX A STATIC ELECTRICITY Paragraph 10 . SCOPE . 23 10.1 Scope . 23 20 . APPLICABLE DOCUMENTS 23 30 . INTRODUCTION 23 30.1 General 23 30.2 Nature of static electricity 23 30.2.1 Electrostatic fields 24 30.2.2 Capa
30、citance-voltage relationship 24 30.3 Triboelectric series 24 30.4 Prime sources of static electricity 25 APPENDIX B SUSCEPTIBILITY TO ESD Paragraph 10 . SCOPE . 29 10.1 Scope . 29 20 . APPLICABLE DOCUMENTS 29 30 . SUSCEPTIBILITY OF PARTS. ASSEMBLIES AND EQUIPMENT . 29 30.1 Susceptibility of parts 29
31、 30.2 Susceptibility of assemblies and equipment . 29 40 . TYPES OF ESD FAILURE 29 40.1 Intermittent. upset. and hard failures . 29 40.1.1 Upset failures . 30 40.1.2 Hard failures . 30 40.1.3 Susceptible parts . 30 50 . FAILURE MECHANISMS . 31 50.1 Typical failure mechanisms . 31 50.1.1 Thermal seco
32、ndary breakdown 31 50.1.2 Metallization melt . 32 50.1.3 Dielectric breakdown 32 50.1.4 Gaseous arc discharge . 32 vi i Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Paragraph 50.1.5 50.1.6 50.2 50.2.1 50.2.1.1 50.2.1.2 50.2.1.3 50.2.2 50.2.2.1 50.
33、2.2.2 50.2,2.3 50.2.3 50.2.3.1 50.2.3.2 50.2.3.3 50.2.3.4 50.2.4 50.2.4.1 50.2.4.2 50.2.4.3 50.2.5 50.2.6 MIL-HDBK-263B CONTENTS . Continued Paqe Surface breakdown . 33 Bulk breakdown . 33 Part constituents susceptible to ESD 33 MOS structures . 33 Part types . 34 Fai 1 Ure mechani sms . 37 Failure
34、indicators . 37 Semiconductor junctions 37 Part types . 38 Failure mechanisms . 38 Failure indicators . 39 Film resistors . 39 Part types . 39 Failure mechanisms . 40 Failure indicators . 41 Metallization strips 41 Passivated field effect structures with nonconductive lids . 41 Part types . 42 Failu
35、re mechanisms . 42 Failure indicators . 42 Piezoelectric crystals . 43 C1 osely spaced el ectrodes . 43 APPENDIX C CASE HISTORIES OF EOS/ESD FAILURES IN MILITARY ELECTRONICS Paragraph 10 . SCOPE . 44 10.1 Scope . 44 20 . APPLICABLE DOCUMENTS 44 30 . INTRODUCTION 44 30.1 General 44 40 . SUMMARY OF RE
36、SULTS . 44 40.1 Summary of results . 44 50 . SELECTED CASE HISTORIES 46 50.1 Selected case histories 46 JFETs . 46 causedby ESD . 46 50.1.1 ESD faults of monolithic dual n-channel 50.1.2 Digital to analog converter (DAC) failures viii Provided by IHSNot for ResaleNo reproduction or networking permit
37、ted without license from IHS-,-,-MIL-HDBK-263B m 9999970 0393822 033 m MIL-HDBK-263B Paragraph 50.1.3 50.1.4 50.1.5 APPENDIX D Paragraph 10 . 10.1 20 . 20.1 20.1.1 20.2 30 . 30.1 30.2 30.3 30.4 30.5 40 . 40.1 40.2 40.3 40.4 40.5 40.5.1 40.5.2 40.5.3 APPENDIX E Paragraph 10 . 10.1 20 * 20.1 20.1.1 30
38、 . 30.1 30.1.1 CONTENTS . Continued Paqe EOS/ESD microprocessor faults . 47 Bourns type 3269 cermet trim potentiometer . 48 Conclusions 50 ESD TESTING SCOPE . 51 Scope 51 . APPLICABLE DOCUMENTS 51 Government documents 51 Specifications. standards. and handbooks Non-Government publications 52 51 ESD
39、TEST MODELS 52 Human body model (HBM) . 52 Charged device model (CDM) . 53 Field induced model 56 Machine model . 56 Charged chip model . 57 TYPES OF ESD TESTING 57 General 57 Latent defect testing . 57 ESD spark testing . 58 Lot sample testing . 58 Assembly and equipment testing . 58 Assembly test
40、method. . 58 Equipment test method . 59 Other test methods . 59 DESIGN OF PROTECTION NETWORKS . SCOPE 60 Scope . 60 APPLICABLE DOCUMENTS 60 Government documents . Specifications. standards. and handbooks INTRODUCTION 60 General 60 Degree of protection afforded . 60 60 ix Provided by IHSNot for Resal
41、eNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-2b3B = 9999970 0393823 T78 Paragraph 30.2 30.2.1 30.2.2 30.2.3 30.2.4 30.2.5 30.2.6 30.3 30.4 30.4.1 30.4.2 30.4.3 30.4.4 30.4.5 30.5 MIL-HDBK-263B CONTENTS . Continued Protection network elements 61 Diodes . 61 Resistors
42、 . 62 Four-layer devices (p.n.p.n) 62 Contacts 63 Metallization . 63 Design considerations for ESD protection networks 63 Design precautions . 64 Part and hybrid design considerations . 64 Assembly design considerations . 66 Product design recommendat ions for ESD hardening . 66 ESDS part protection
43、 networks . 68 Transient suppressors . 68 Experimental studies 71 Three-layer devices (n-p-n or p.n.p) 62 APPENDIX F PROTECTED AREAS Paragraph 10 . SCOPE 72 10.1 Scope . 72 20 . APPLICABLE DOCUMENTS 72 20.1 Government documents 72 20.1.1 Specifications. standards. and handbooks 72 20.2 Non-Governmen
44、t pub1 ications 73 30 . INTRODUCTION 73 30.1 Introduction 73 30.1.1 General concepts 73 30.1.2 Elements of a protected area 74 40 . GROUNDING CONSIDERATIONS 75 40.1 General 75 50 . SAFETY AND GROUNDING REQUIREMENTS . 75 50.1 Personnel safety 75 50.2 Ground potential of electrical equipment and power
45、 tools 75 50.3 Ground potential of protected areas 75 50.4 Alternative grounding procedures 75 50.5 Grounding tradeoffs 75 X Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-2b3B m 9999970 0393824 904 m . MIL-HDBK-263B CONTENTS . Continued Pa
46、qe Paragraph 60 . TOOLS. MATERIALS AND EQUIPMENT . 76 60.1 General 76 60.2 Military specifications 79 70 . OPERATING PROCEDURES 79 70.1 General 79 80 . PROTECTED AREAS 79 80.1 Certification/verification and monitoring . 79 CERTIFICATION/VERIFICATION AND MONITORING OF APPENDIX G STATIC ELECTRICITY IN
47、 AN INTEGRATED CIRCUIT FABRICATION CLEAN ROOM Paragraph 10 . SCOPE . 80 10.1 Scope . 80 20 . APPLICABLE DOCUMENTS 80 30 . INTRODUCTION 80 30.1 General 80 30.3 Humidity considerations 81 30.2 Fabrication process considerations . 80 40 . ESD SUSCEPTIBILITY OF WAFERS 82 40.2 Worker induced problems 82
48、CHARGES 83 50.1 General 83 50.2 Particulate contamination . 83 50.2.1 Charging of particles . 83 General 40.1 82 50 . IMPLICATIONS OF THE PRESENCE OF STATIC 60 . FABRICATION PROCESSES AFFECTED BY STATIC CHARGES 83 60.1 Photolithography 83 60.2 Epitaxial growth 84 60.3 Oxide formation 84 APPENDIX H G
49、ENERAL GUIDELINES AND SAMPLE OPERATING PROCEDURES FOR HANDLING ESDS PARTS. ASSEMBLIES AND EQUIPMENT Paragraph 10 . SCOPE . 85 10.1 Scope . 85 xi Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-CONTENTS . Continued Pase Paragraph 20 . APPLICABLE DOCUMENTS 85 30 . GENERAL GUIDELINES . 85 30.1 Protective ha
