1、 MIL-PRF-19500/742A 28 August 2009 SUPERSEDING MIL-PRF-19500/742 1 June 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CB
2、US, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. Thi
3、s specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug diodes utilizing category 3 metallurgical bonding) device types as specified in MIL-PRF-19500. This categ
4、ory 3 metallurgical bonding is also known as compression bonds (CB). * 1.2 Physical dimensions. See figures 1(similar to a DO-7) and 2 (square end-cap surface mount). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. 1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). TSTG= T
5、J(max)= -65C to +175C. 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Col. 8 Col. 9 Types (1) VRWMIO(L)TL= +75C L = .25 in. (6.35 mm) (2) (3) IO1 TA= +55C (4) (5) (6) IFSMat +25C operating at IO1tp= 8.3 ms trrRJLat L = .375 in. (9.52 mm) RJEC(7) RJX (6
6、) A A A(pk) ns C/W C/W C/W 1N5802CB, CBUS 1N5804CB, CBUS 1N5806CB, CBUS 50 100 150 2.5 2.5 2.5 1.0 1.0 1.0 35 35 35 25 25 25 36 36 36 13 13 13 154 154 154 1N5807CB, CBUS 1N5809CB, CBUS 1N5811CB, CBUS 50 100 150 6.0 6.0 6.0 3.0 3.0 3.0 125 125 125 30 30 30 22 22 22 6.5 6.5 6.5 52 52 52 See notes on n
7、ext page. AMSC N/A FSC 5961 Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil . Since contact information can change, you may want to verify the
8、currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil. * Inactive for new design after 28 September 2009. For new design use - 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US on MIL-PRF-19
9、500/477. INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 2 1.3.2 Ratings applicable to indi
10、vidual types - Continued. (1) TEC= TLat L = 0 or Tend tabfor US suffix devices. (2) Derate at 24 mA/C for TLabove +75 C for 2.5 amp ratings. (3) Derate at 60 mA/C for TLabove +75 C for 6.0 amp ratings (4) Derate at 8.33 mA/C for TAabove +55 C for 1.0 amp ratings. (5) Derate at 25 mA/C for TAabove +5
11、5 C for 3.0 amp ratings (6) For the 1 and 3 amp ratings at 55C, These IOratings are for a thermally (PC boards or other) mounting methods where the lead or end-cap temperatures cannot be maintained as shown in col. 3 and where thermal resistance from mounting point to ambient is still sufficiently c
12、ontrolled where TJ(MAX) in 1.3.1 is not exceeded. This equates to RJX 154C/W for the 1N5802CB-1N5806CB and RJX 52C/W for the 1N5807CB-1N5811CB in col. 9. Also see application notes in 6.4.1 thru 6.4.4. (7) US suffix devices only. 1.4 Primary electrical characteristics. Unless otherwise specified, TA
13、= +25C. Types VBRat 100 A Pulse 20 ms IR1at VR= VRWMTA= +25C Pulsed VR 20ms IR2at VR= VRWMTA= +125C Pulsed VR 20ms 1N5802CB, CBUS 1N5804CB, CBUS 1N5806CB, CBUS V 60 110 160 A 1.0 1.0 1.0 A 175 175 175 1N5807CB, CBUS 1N5809CB, CBUS 1N5811CB, CBUS 60 110 160 5.0 5.0 5.0 525 525 525 Provided by IHSNot
14、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 3 Dimensions 1N5802CB, 1N5804CB, 1N5806CB 1N5807CB, 1N5809CB, 1N5811CB Ltr. Inches Millimeters Inches Millimeters Notes Min Max Min Max Min Max Min Max BD .065 .085 1.65 2.16 .115 .142 2.92 3.61 4 BL .1
15、25 .250 3.18 6.35 .130 .300 3.30 7.62 3 LD .027 .032 0.69 0.81 .037 .042 0.94 1.07 3 LL .700 1.30 17.78 33.02 .900 1.30 22.86 33.02 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BL shall include the entire body including slugs and sections of
16、 the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with ASME Y14.5M, diameters are equivalent
17、 to x symbology. * FIGURE 1. Physical dimensions (similar to a DO-7). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 4 Dimensions D-5A 1N5802CBUS, 1N5804CBUS, 1N5806CBUS D-5B 1N5807CBUS, 1N5809CBUS, 1N5811CBUS Ltr. Inches Millimet
18、ers Inches Millimeters Notes Min Max Min Max Min Max Min Max BD .091 .103 2.31 2.62 .137 .148 3.48 3.76 BL .168 .200 4.27 5.08 .200 .225 5.08 5.72 ECT .019 .028 0.48 0.71 .019 .028 0.48 0.71 S .003 0.08 .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information on
19、ly. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. Cathode marking to be either in color band, three dots spaced equally, or a color dot on the face of the end tab. 6. Color dots will be .020 inch (0.51 mm) diameter minimum and those
20、on the face of the end tab shall not lie within .020 inch (0.51 mm) of the mounting surface. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions of surface mount family (square body surface mount). Provided by IHSNot for ResaleNo reproduction o
21、r networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or reco
22、mmended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.
23、2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPAR
24、TMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.m
25、il. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of t
26、his document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification.
27、Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviati
28、ons, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: EC. . . . . . . . . . . . . . End-cap. I(BR). . . . . . . . . . . . .Current for testing breakdown voltage. Vfr. . . . . . . . . . . . . . Forward recovery voltage. 3.4 Interface and physical dimensions.
29、 The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 and 2 herein. 3.4.1 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-double plug construction, utilizing a category III bond, in accordance with MIL-PRF-19500. Fu
30、ll area metallurgical bond is required. (i.e. slug tungsten or moly to die). No point contacts are allowed. Silver button dumet design is prohibited. US version devices shall be structurally identical to the non-surface mount devices except for lead terminations. 3.4.2 Lead finish. Unless otherwise
31、specified, lead or end-cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish, the maximum lead temperature is limited to 175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see
32、6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 6 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the
33、 cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial container. 3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately, for surface mount (US) devices, a minimum of three even
34、ly spaced contrasting color dots around the periphery of the cathode end may be used. No color coding will be permitted. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Ele
35、ctrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appear
36、ance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4) and tables I and II herein. 4.2 Qualification inspection. Qualification
37、inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the perfo
38、rmance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 a
39、nd as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 7 * 4.3 Screening (JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The f
40、ollowing measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.1) 9 Not required 10 Method 1038 of MIL-STD-7
41、50, condition A 11 Required IR1and VFM112 Required, see 4.3.2 (2) 13 Subgroup 2 of table I herein;IR1100 percent of initial reading or 250 nA dc (1N5802, 1N5804, 1N5806) or 1 A dc (1N5807, 1N5809, 1N5811), whichever is greater. VFM1 0.05 V dc. Scope-display evaluation (see 4.5.2). (1) Shall be perfo
42、rmed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. (2) ZJXis not required in screen 13, if already previously performed. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-ST
43、D-750 using the guidelines in that method for determining IM, IH, tH, and K factor where appropriate. Measurement delay time (tMD) = 70 s max. The limits will be statistically derived. See table E-IX of MIL-PRF-19500, group E, subgroup 4 and table II, subgroup 4 herein. See figures 3, 4, 5, and 6 fo
44、r thermal impedance. * 4.3.2 Free air power burn-in conditions. Power burn-in conditions (ACOL or dc) as follows: Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition B (see 4.5.3, 4.5.3.1). Adjust TA, IO,or IFto achieve TJ= 135C minimum, 175C maximum. a. ACOL: VR= rated
45、 VRWM; f = 60 Hz; IO(min) = col. 4 of 1.3.2, (see 4.5.3). b. DC: IF(min) = col. 4 of 1.3.2. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, mounting conditions) may be used. A justification demonstrating equivalence is required
46、. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/742A 8 4.4 Conformance inspection. Conformance ins
47、pection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditio
48、ns specified for subgroup testing in appendix E, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection, appendix E, table E-VIb (JAN, JANTX, and JANTXV of MIL-PRF-195
49、00). Subgroup Method Condition B3 1027 IO= IO1rated minimum (see col. 4 of 1.3.2); adjust IOto achieve TJ= 150 C minimum, apply VR = ratedVRWM(see col. 2 of 1.3.2), f = 50 - 60 Hz (see 4.5.3.1). TA= 55C max. For irradiated devices, include trras an end-point measurement. 4.4.3 Group C inspection. Group C inspection shall be conduct
