DLA SMD-5962-84093 REV F-2006 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL 4-CHANNEL MULTIPLEXER MONOLITHIC SILICON《硅单片双重4通道多路复用器 高速氧化物半导体数字微型电路》.pdf

上传人:inwarn120 文档编号:698731 上传时间:2019-01-02 格式:PDF 页数:14 大小:104.79KB
下载 相关 举报
DLA SMD-5962-84093 REV F-2006 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL 4-CHANNEL MULTIPLEXER MONOLITHIC SILICON《硅单片双重4通道多路复用器 高速氧化物半导体数字微型电路》.pdf_第1页
第1页 / 共14页
DLA SMD-5962-84093 REV F-2006 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL 4-CHANNEL MULTIPLEXER MONOLITHIC SILICON《硅单片双重4通道多路复用器 高速氧化物半导体数字微型电路》.pdf_第2页
第2页 / 共14页
DLA SMD-5962-84093 REV F-2006 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL 4-CHANNEL MULTIPLEXER MONOLITHIC SILICON《硅单片双重4通道多路复用器 高速氧化物半导体数字微型电路》.pdf_第3页
第3页 / 共14页
DLA SMD-5962-84093 REV F-2006 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL 4-CHANNEL MULTIPLEXER MONOLITHIC SILICON《硅单片双重4通道多路复用器 高速氧化物半导体数字微型电路》.pdf_第4页
第4页 / 共14页
DLA SMD-5962-84093 REV F-2006 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL 4-CHANNEL MULTIPLEXER MONOLITHIC SILICON《硅单片双重4通道多路复用器 高速氧化物半导体数字微型电路》.pdf_第5页
第5页 / 共14页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED B Add vendor CAGE 18714 for device type 01. Remove one vendor; CAGE 31019. 86-12-11 N. A. Hauck C Add device types 01FX and 012X for vendor CAGE 27014. 87-07-01 N. A. Hauck D Update boilerplate to MIL-PRF-38535 requirements. - CFS 02-01-22 Thomas M

2、. Hess E Made change to paragraph 3.5. Update boilerplate to MIL-PRF-38535 requirements. - LTG 05-01-24 Thomas M. Hess F Change boilerplate to add device class V criteria. - jak 06-11-02 Thomas M. Hess Current CAGE Code 67268 REV SHET REV SHET REV STATUS REV F F F F F F F F F F F F F OF SHEETS SHEET

3、 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Greg A. Pitz DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY N. A. Hauck AND AGENCIES OF THE DEP

4、ARTMENT OF DEFENSE DRAWING APPROVAL DATE 84-12-26 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-CHANNEL MULTIPLEXER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 14933 84093 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E031-07 .Provided by IHSNot for ResaleNo reproduction or networking

5、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84093 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (dev

6、ice classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as show

7、n in the following examples. For device classes M and Q: 84093 01 E A Drawing number Device type (see 1.2.2) Case outline(see 1.2.4) Lead finish(see 1.2.5)For device class V: 5962 - 84093 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designato

8、rCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, a

9、ppendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC153 Dual 4-channel multiplexer 1.2.3 Device

10、class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be m

11、arked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s

12、). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as s

13、pecified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84093 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

14、REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) . -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) -0.5 V dc to VCC+ 0.5 V dc Clamp diode current 20 mA DC output current (p

15、er pin) . 25 mA DC VCCor GND current (per pin) 50 mA Storage temperature range (TSTG) -65C to +150C Maximum power dissipation (PD) 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) . +175C 1.4 Recommended ope

16、rating conditions. 2/ 3/ Supply voltage range (VCC) . +2.0 V dc to +6.0 V dc Input voltage range (VIN) . 0.0 V to VCCOutput voltage range (VOUT) 0.0 V to VCCCase operating temperature range (TC) -55C to +125C Input rise and fall time (tr, tf): VCC= 2.0 V dc 0 to 1000 ns VCC= 4.5 V dc 0 to 500 ns VCC

17、= 6.0 V dc 0 to 400 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to ground. 3/ The limits for the paramete

18、rs specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to + 125C, derate linearly at 12 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

19、 84093 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified her

20、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microc

21、ircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearc

22、h/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precede

23、nce. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as

24、 modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B dev

25、ices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case ou

26、tlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching wav

27、eforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are

28、 as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo rep

29、roduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84093 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the

30、manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for d

31、evice classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The complian

32、ce mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein).

33、 For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall

34、affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V i

35、n MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired t

36、o this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation

37、shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking pe

38、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84093 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C unless otherwise specified 1/

39、Group A subgroups Limits Unit Min Max High level output voltage VOHVIN= VIHor VILVCC=2.0 V 1, 2, 3 1.9 V |IO| = 20 A VCC=4.5 V 4.4 VCC=6.0 V 5.9 VIN= VIHor VIL|IO| = 4.0 mA VCC=4.5 V 3.7 IN= VIHor VIL|IO| = 5.2 mA VCC=6.0 V 5.2 Low level output voltage VOLVIN= VIHor VILVCC=2.0 V 1, 2, 3 0.1 V |IO| =

40、 20 A VCC=4.5 V 0.1 VCC=6.0 V 0.1 VIN= VIHor VIL|IO| = 4.0 mA VCC=4.5 V 0.4 IN= VIHor VIL|IO| = 5.2 mA VCC=6.0 V 0.4 High level input voltage VIHVCC=2.0 V 1, 2, 3 1.5 V 2/ VCC=4.5 V 3.15 VCC=6.0 V 4.2 Low level input voltage VILVCC=2.0 V 1, 2, 3 0.3 V 2/ VCC=4.5 V 0.9 VCC=6.0 V 1.2 Input capacitance

41、 CINVIN= 0.0 V, TC= +25C See 4.4.1c 4 10 pF Quiescent supply current ICCVCC= 6.0 V VIN= VCCor GND 1, 2, 3 160 A Input leakage current IINVCC= 6.0 V VIN= VCCor GND 1, 2, 3 1.0 A Functional tests See 4.4.1d 7, 8 Propagation delay time, data to tPHL1, tPLH1TC= +25C CL= 50 pF VCC=2.0 V 9 145 ns output 3

42、/ See figure 4 VCC=4.5 V 29 VCC=6.0 V 25 VCC=2.0 V 220 VCC=4.5 V 44 TC= -55C and +125C CL= 50 pF See figure 4 VCC=6.0 V 10, 11 38 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 8409

43、3 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified 1/ Group A subgroups Limits Unit Min Max Propagation delay time, sele

44、ct to tPHL2, tPLH2TC= +25C CL= 50 pF VCC=2.0 V 9 195 ns output 3/ See figure 4 VCC=4.5 V 39 VCC=6.0 V 33 TC= -55C and +125C CL= 50 pF VCC=2.0 V 10, 11 295 See figure 4 VCC=4.5 V 59 VCC=6.0 V 50 Propagation delay time, output enable tPHL3, tPLH3TC= +25C CL= 50 pF VCC=2.0 V 9 110 ns to output 3/ See f

45、igure 4 VCC=4.5 V 22 VCC=6.0 V 19 TC= -55C and +125C CL= 50 pF VCC=2.0 V 10, 11 165 See figure 4 VCC=4.5 V 33 VCC=6.0 V 28 Transition time high-to-low, tTHL, tTLHTC= +25C CL= 50 pF VCC=2.0 V 9 75 ns low-to-high 4/ See figure 4 VCC=4.5 V 15 VCC=6.0 V 13 TC= -55C and +125C CL= 50 pF VCC=2.0 V 10, 11 1

46、10 See figure 4 VCC=4.5 V 22 VCC=6.0 V 19 1/ For a power supply of 5 V 10% the worst case output voltages (VOHand VOL) occur for HC at 4.5 V. Thus, the 4.5 V values should be used when designing with this supply. Worst case VIHand VILoccur at VCC= 5.5 V and 4.5 V respectively. (The VIHvalue at 5.5 V

47、 is 3.85 V.) The worst case leakage current (IIN, and ICC) occur for CMOS at the higher voltage, and so the 6.0 V values should be used. 2/ VIHand VILtests are not required if applied as a forcing function for VOHand VOL. 3/ AC testing at VCC= 2.0 V and VCC= 6.0 V shall be guaranteed, if not tested,

48、 to the limits specified in table I. 4/ Transition time (tTHL, tTLH), if not tested, shall be guaranteed to the specified parameters. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84093 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outlines E and F 2 Terminal number Terminal symbol 1 1G NC 2 B 1G 3 1C3 B 4 1C2 1C3 5 1C1 1C2

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1